Steag Rtp Systems Gmbh

Yuval Wasserman

Yao Zhi Hu

Sing Pin Tay

The method and apparatus for heat treating and etching refractory metal and silicides of the refractory metal include integrated multi-chamber, multi-processing of substrates to react refractory metal and exposed silicon in self-aligned silicidation operations. Unreacted refractory metal on silicon oxide regions is selectively etched away distinctively from reacted silicide to yield highly precise self-aligned regions of silicide. Subsequent heat treatment at elevated temperatures reduces the sheet resistance of the silicide to yield highly conductive regions that are conducive to formation of conductor lines less than 0.25 &mgr;m wide.

Method and apparatus for processing refractory metals on semiconductor substrates

A process and system for preventing gases from either leaking into or out of a thermal processing chamber that is designed to operate at or near atmospheric pressure is disclosed. For instance, in one embodiment, gases are prevented from leaking into a thermal processing chamber by maintaining the pressure within the chamber at levels that are slightly greater than atmospheric pressure. In an alternative embodiment, in order to prevent gases from leaking out of the chamber, the pressure within the chamber is maintained at levels slightly less than atmospheric pressure. During operation of the thermal processing chamber, a gas is continuously circulated through the chamber. In order to carry out the process of the present invention, a pressure control device can be placed upon the gas outlet for maintaining the pressure within the chamber within a desired range.

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Sunnyvale, CA, United States of America

Yuval Wasserman