Kla Tencor Corporation

Kla Corporation

Yuval Lamhot

Einat Peled

Noga Sella

Eran Amit

Tal Yaziv

Ido Adam

Wei-Te Cheng

Roie Volkovich

Yoel Feler

Barak Bringoltz

Ohad Bachar

Alexander Svizher

Dror Alumot

Lilach Saltoun

Tom Leviant

Alon Yagil

Martin Mayo

Naama Cohen

Evgeni Gurevich

Eltsafon Ashwal-Island

Yaron De Leeuw

Yaron Deleeuw

Eltsafon Ashwal

Methods, metrology modules and target designs are provided, which improve the accuracy of metrology measurements. Methods provide flexible handling of multiple measurement recipes and setups and enable relating them to landscape features that indicate their relation to resonance regions and to flat regions. Clustering of recipes, self-consistency tests, common processing of aggregated measurements, noise reduction, cluster analysis, detailed analysis of the landscape and targets with skewed cells are employed separately or in combination to provide cumulative improvements of measurement accuracy.

Accuracy improvements in optical metrology

An overlay metrology system may include a controller for receiving metrology data associated with a plurality of overlay targets on one or more samples; generating a reference metric for at least some of the plurality of overlay targets based on the metrology data, where the reference metric is associated with one or more properties of the respective overlay targets that contributes to overlay error; classifying the plurality of overlay targets into one or more groups based on the reference metrics calculated for the plurality of overlay targets; generating a reference image for at least some of the one or more groups; generating corrected metrology data using the associated reference image for at least some of the one or more groups; and generating overlay measurements for the plurality of overlay targets based on the corrected metrology data.

Reference image grouping in overlay metrology

A method and system for measuring misregistration between different layers of a semiconductor device, the method including providing a set of pupil inaccuracy scalable basis elements (PISBEs) relating to a plurality of patterned semiconductor device wafers (PSDWs), generating a single pupil image of a site on a PSDW, the PSDW being one of the plurality of PSDWs, by taking a single measurement of the site, the single pupil image including a plurality of site-specific pixels, calculating a set of site-specific pupil inaccuracy scalable basis element scaling factors (PISBESFs) for the single pupil image using the set of PISBEs and the plurality of site-specific pixels and calculating a site-specific misregistration value (SSMV) using the set of PISBEs and the set of site-specific PISBESFs.

Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof

A method of determining overlay ('OVL') in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and &#x2212;1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and &#x2212;1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.

Overlay measurement using multiple wavelengths

Methods applicable in metrology modules and tools are provided, which enable adjusting metrology measurement parameters with respect to process variation, without re-initiating metrology recipe setup. Methods comprise, during an initial metrology recipe setup, recording a metrology process window and deriving baseline information therefrom, and during operation, quantifying the process variation with respect to the baseline information, and adjusting the metrology measurement parameters within the metrology process window with respect to the quantified process variation. The quick adjustment of metrology parameters avoids metrology-related process delays and releases prior art bottlenecks related thereto. Models of effects of various process variation factors on the metrology measurements may be used to enhance the derivation of required metrology tuning and enable their application with minimal delays to the production process.

Quick adjustment of metrology measurement parameters according to process variation

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Haifa, Israel

Yuval Lamhot