Intel Corporation

Yuval Greenzweig

Ilan Gavish

Eric Jin Li

George K Chen

Sergei L Voronov

George Vakanas

The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the stage; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts.

Laser-assisted chemical singulation of a wafer

Introducing at least one metal such as cobalt, molybdenum, metal carbonyl, tungsten, platinum, or other suitable metal to a focused ion beam. Introducing the focused ion beam to a substrate within a processing chamber. Forming at least one layer over a substrate. Applying heat to the layer by, for example, a laser.

Focused ion beam deposition

Focused ion beam metal deposition

Growing community of inventors

Ramat Hasharon, Israel

Yuval Greenzweig