Matsushita Electric Industrial Co., Ltd.

Yuuzaburou Ban

Isao Kidoguchi

Akihiko Ishibashi

Masahiro Kume

Nobuyuki Uemura

Hidemi Takeisi

Gallium nitride compound semiconductor light emitting device and process

A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a first region, an n-type Al.sub.x Ga.sub.1-x N cladding layer (0.ltoreq.x.ltoreq.1) and a p-type Al.sub.y Ga.sub.1-y N cladding layer (0.ltoreq.y.ltoreq.1) interposing the active layer therebetween, and a current-defining structure made of Al.sub.u Ga.sub.1-u N (0.ltoreq.u.ltoreq.1) having an opening corresponding to the first region for defining a current within the first region.

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Hirakata, Japan

Yuuzaburou Ban