Central Glass Company, Limited

Yuuta Takeda

Akifumi Yao

Kunihiro Yamauchi

Jun Eto

The dry etching method of the present invention etches a metal film formed on a surface of a workpiece by bringing etching gases each containing a &#x3b2;-diketone into contact with the metal film. The method includes: a first etching step of bringing a first etching gas containing a first &#x3b2;-diketone into contact with the metal film; and a second etching step of bringing a second etching gas containing a second &#x3b2;-diketone into contact with the metal film after the first etching step. The first &#x3b2;-diketone is a compound capable of forming a first complex through a reaction with the metal film. The second &#x3b2;-diketone is a compound capable of forming a second complex having a lower sublimation point than the first complex through a reaction with the metal film.

Dry etching method, method for manufacturing semiconductor device, and etching device

A substrate processing gas of the present invention contains IF; and IF, in which a content of the IFis equal to or more than 1 ppm and equal to or less than 2% on a volume basis with respect to a total amount of the IFand the IF.

Growing community of inventors

Ube, Japan

Yuuta Takeda