Kabushiki Kaisha Toshiba

Nuflare Technology, Inc.

Toshiba Kikai Kabushiki Kaisha

The Penn State Research Foundation

L'air Liquide, Societe Anonyme a Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude

Toshiba Ceramics Co., Ltd.

L'air Liquide

Koki Company Limited

Sud-chemie Catalysts Japan, Inc.

Yuusuke Sato

Takumi Yamada

Eiichi Sakaue

Hideshi Takahashi

Kei Matsuoka

Toshimitsu Ohmine

Naoki Tamaoki

Ryosuke Yagi

Takahiro Suzuki

Shinichi Mitani

Nobutaka Kikuiri

Masato Akita

Takaaki Honda

Atsushi Sadamoto

Hiroshi Furutani

Takanori Hayano

Kunihiko Suzuki

Hideki Ito

Kentaro Tomioka

Hiroaki Hirazawa

Takako Kimura

Christian Dussarrat

Jean-Marc Girard

Yoshiyuki Isozaki

Chao-Yang Wang

Akio Ui

Shinichi Tatsuta

Tadashi Ohashi

Junichi Aoki

Mitsuo Sato

Mitsuyasu Furusawa

Kiyoshi Yoshikawa

Kazuhiro Yukikata

Hiroshi Komiyama

Katsuyuki Iwata

Koichiro Kawano

Jun Sonobe

Guoqiang Lu

Ping Xin

Keiichi Akagawa

Takashi Kataoka

Katuhiro Chaki

Tatsuo Fujii

Fuqiang Liu

Kaname Miyazaki

Kimiaki Mori

Wenpeng Liu

Hiroshi Takeda

Tatsuhiko Iijima

Toshimitu Ohmine

Yasuyuki Egashira

Takamitsu Shigemoto

A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

Vapor phase growth apparatus and vapor phase growth method

A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Shower head, vapor phase growth apparatus, and vapor phase growth method

A shower head that supplies a process gas in a vapor phase growth apparatus includes a mixing chamber; and a plurality of cooling portions provided below the mixing chamber with gaps between cooling portions. The cooling portion includes a cooling hole provided in a horizontal direction, and the gaps extend linearly in the horizontal direction. The shower head further includes, below the gaps, a plurality of buffer regions extending linearly in the horizontal direction. The shower head further includes, below the buffer regions, a shower plate including a plurality of through holes disposed at a predetermined interval. The shower head can uniformly supply the process gas.

Shower head, vapor phase growth apparatus and vapor phase growth method

Provided is a flux activator containing a halogen compound represented by formula 1 below: 

Flux activator, flux, and solder

A heater according to an embodiment of the present disclosure includes a heater element including a flat heat generating body, a linear slit formed in a linearly opened manner with one end arranged at an outer circumference of the heat generating body and the other end arranged in the turnover portion of the heat generating body, and a turnover portion formed in an opened manner to continue from the other end, an opening diameter of the turnover portion being larger than a slit width of the linear slit, the heater element generating heat by electrification, and a pair of electrodes connected to a predetermined face of the heater element, a voltage being applied on the electrodes during electrification of the heater element.

Heater and apparatus for manufacturing semiconductor device using heater

A vapor phase growth apparatus according to an embodiment includes n reaction chambers, a main gas supply passage supplying a process gas to the n reaction chambers, a main mass flow controller arranged in the main gas supply passage to control a flow rate of the process gas flowing in the main gas supply passage, (n&#x2212;1) first sub gas supply passages being branches of the main gas supply passage to supply divided process gases to the (n&#x2212;1) reaction chambers among the n reaction chambers, (n&#x2212;1) first sub mass flow controllers arranged in the first sub gas supply passages to control flow rates of the process gases flowing in the first sub gas supply passages, and one second sub gas supply passage being a branch of the main gas supply passage to supply a remainder of the process gas to the one reaction chamber other than the (n&#x2212;1) reaction chambers.

A vapor phase growth apparatus according to one embodiment includes a reaction chamber, a storage container storing organic metal, a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid, a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container, an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas, and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.

Vapor phase growth apparatus, storage container, and vapor phase growth method

A vapor deposition method supplies a material gas onto a substrate while heating the substrate by a heater to sequentially form a plurality of films with vapor deposition, grows the film under a constant output control, which keeps an output of the heater at a predetermined output in each of the plurality of films, until a total film thickness of the films formed on the substrate reaches a threshold value, and grows the film under a temperature feedback control, which controls the output of the heater such that a temperature of the substrate measured by a radiation thermometer becomes a predetermined temperature, after the total film thickness reaches the threshold value.

Vapor deposition method and vapor deposition apparatus

A vapor phase growth method of growing a film on a substrate by supplying material gases to the substrate while heating the substrate with a heating unit according to an embodiment, the method includes: measuring a temperature of the substrate with a radiation thermometer; executing a temperature feedback control to control an output of the heating unit to cause a measurement value of the radiation thermometer to have a set value when a film is not grown on the substrate; and executing a constant output control to maintain an output of the heating unit constant when a film causing thin-film interference in a wavelength measured by the radiation thermometer is grown on the substrate.

Vapor phase growth method of growing a film on a substrate while heating the substrate with a heating unit

A vapor phase growth apparatus includes: a reaction chamber; a lower region provided below the reaction chamber; a rotating body provided in the reaction chamber; a rotating shaft connected to the rotating body and having a lower end provided in the lower region; a support portion provided in an upper portion of the rotating body and supporting a substrate; a reaction gas supply port provided on the reaction chamber and supplying a reaction gas for forming a film on the substrate into the reaction chamber; a rotating mechanism including a rotor, the rotating mechanism provided in the lower region and configured to rotate the rotating shaft; a first bearing provided in the lower region and rotatably supporting the rotating shaft; a second bearing provided below the first bearing in the lower region, the second bearing rotatably supporting the rotating shaft; a first air supply port provided above the rotating mechanism and the first bearing in the lower region, the first air supply port supplying a first gas into the lower region; a second air supply port provided below the rotating mechanism and the second bearing in the lower region, the second air supply port supplying a second gas into the lower region; a first exhaust port provided between the first air supply port and the second air supply port in the lower region, the first exhaust port exhausting the first gas and the second gas from the lower region; and a second exhaust port provided in the reaction chamber and exhausting a surplus reaction gas and a reaction by-product generated by the formation of the film from the reaction chamber.

A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; and a support portion disposed below the shower plate inside the reaction chamber to place a substrate thereon. Then, the shower plate includes a plurality of first and second lateral gas passages disposed within different horizontal planes and first and second gas ejection holes connected to the first and second lateral gas passages. Further, the shower plate includes a center lateral gas passage that passes through a position directly above the rotation center of the support portion and third gas ejection holes connected to the center lateral gas passage. Then, the gases ejected from the first and second gas ejection holes and the center gas ejection holes are independently controllable.

Vapor phase growth apparatus

Heater

Growing community of inventors

Tokyo, Japan

Yuusuke Sato