Kyocera Corporation

Toshiba Materials Co., Ltd.

Yuusaku Ishimine

Kazuhiko Fujio

Keiichi Sekiguchi

Masayuki Moriyama

Yoshihiro Okawa

Yasunori Kawanabe

Mieko Yashima

Kenji Komatsubara

Yoshiyuki Fukuda

Takeshi Muneishi

Kazuhiro Ishikawa

Kiyotaka Nakamura

Shinya Terao

Takao Shirai

Kentaro Takanami

Miki Hamada

Kazuaki Takigawa

Kazuto Maruyama

Daiki Watanabe

Mami Iida

Yuuya Nakao

A plasma treatment apparatus member according to the present disclosure includes a base, a plasma electrode, a heating element, and a conductive layer. The base is made of a ceramic and has a facing surface facing an object to be processed. The plasma electrode is located inside the base. The heating element and the conductive layer are located farther from the facing surface than the plasma electrode are, inside the base. The heating element and the conductive layer do not overlap each other in plan view seen from a direction orthogonal to the facing surface, and are located at different heights in side view seen from a direction parallel to the facing surface.

Plasma treatment apparatus member

A base structure includes a base, a first conductor layer, and a via conductor. The base has a first surface. The first conductor layer is positioned along the first surface in the base. The via conductor includes a first part and a second part in a section that includes the via conductor and that extends in a first direction perpendicular to the first surface. The length of the first part in the first direction is larger than the thickness of the first conductor layer. The length of the second part in the first direction is larger than the thickness of the first conductor layer. The second part is continuous with the first part, and at least a portion of the outer edge of the second part is displaced from the outer edge of the first part when viewed in the first direction.

Base structure and wafer placing device

A heater includes a base body and a resistance heating element. The base body is configured by an insulating material and includes a top surface on which a wafer is placed. The resistance heating element extends in the base body along the top surface. A top surface of the resistance heating element and the base body are in contact with each other. A vacuum or gas-filled gap is interposed between a side surface of the resistance heating element and the base body.

Heater and method of production of same

A heater includes an insulating base, a resistance heating element, and a hollow member. The base includes an upper surface and a lower surface. The resistance heating element extends inside the base along the upper surface and the lower surface. The hollow member includes a first plate-shaped part laid over the lower surface, a second plate-shaped part facing the first plate-shaped part through a space, and a side surface part surrounding the space from an outside in a planar direction of the first plate-shaped part and the second plate-shaped part.

Heater and heater system

A heat exchange member includes: a lid portion; a bottom plate portion; a plurality of partition portions disposed so as to connect the lid portion and the bottom plate portion, a part surrounded by the lid portion, the bottom plate portion and the partition portion defining a first flow passage through which a first fluid flows; a curved portion curved toward the first flow passage on a first flow passage side of at least one of the lid portion and the bottom plate portion when viewed in a cross section perpendicular to a direction in which the first fluid flows.

Heat exchange member and heat exchanger

In the present disclosure, a flow path member includes a substrate, a flow path and a first oxide layer. The substrate contains non-oxide ceramics, and includes an outer surface. The flow path is in the substrate, and includes an inlet and an outlet. The first oxide layer is disposed on the outer surface.

Flow path member

A flow path member includes a lid portion, a bottom plate portion, and side walls provided between the lid portion and the bottom plate portion, a flow path in which a fluid flows is configured with the lid portion, the side walls, and the bottom plate portion, a portion of a surface of the side walls on the flow path side includes a coarse portion that is coarser than the other portions.

Flow path member, and heat exchanger and semiconductor manufacturing apparatus using same

A flow path member may include silicon nitride ceramics. The flow path member may have an inlet port, an outlet port, and a flow path connected to the inlet port and the outlet port inside the flow path member. A plurality of needle-shaped crystals may be arranged on a surface of the flow path where the needle-shaped crystals intersect each other.

Flow path member and semiconductor module

A flow passage member includes a wall formed of ceramics, a space surrounded by the wall being a flow passage through which a fluid flows, a ratio of an area occupied by a grain boundary phase in an inner surface of a wall part of the wall in which wall part heat exchange is conducted being smaller than a ratio of an area occupied by a grain boundary phase in an outer surface of the wall part.

Flow passage member and semiconductor module

A flow path member includes a flow path which has an inlet and an outlet in a base made of ceramics, and a low resistance portion whose surface resistance is less than 1&#xd7;10&#x3a9;/sq in at least a part of the flow path.

Flow path member, heat exchanger including the flow path member, and semiconductor manufacturing apparatus including the flow path member

A flow channel member according to the present invention includes a ceramic substrate, a flow channel inside the ceramic substrate through which a fluid flows, and multiple protrusions on an outer surface of the substrate.

Flow channel member, and heat exchanger and semiconductor module each using same

Disclosed are a silicon carbide sintered body and a sliding component using the same, and a protective body which, even when fine cracks are generated due to thermal shock or mechanical impact over prolonged use, are capable of inhibiting development of the cracks. The silicon carbide sintered body contains silicon carbide grains as a major component and has a relative density of 95% or more. On an observation surface of the silicon carbide sintered body, coarse silicon carbide grainshaving a surface area of 170 &#x3bc;mor more occupy 6 area % or more and 15 area % or less. The silicon carbide sintered body has excellent mechanical properties such as strength and rigidity. Even when fine cracks are generated due to thermal shock or mechanical impact, coarse silicon carbide grainsare capable of inhibiting development of the cracks.

Silicon carbide sintered body and sliding component using the same, and protective body

A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate.

Silicon nitride substrate, circuit substrate and electronic device using the same

A sliding member having a sliding surface comprising a silicon carbide sintered body having a primary phase comprising mainly silicon carbide, and a subphase having a different composition from the primary phase and containing at least boron, silicon and carbon. The ratio of pores having a roundness of 6 &#x3bc;m or less and a pore diameter of 10 to 60 &#x3bc;m with respect to all pores having a pore diameter of 10 &#x3bc;m or more in the sliding surface is 60% or more. This enables retention of good seal properties even in a long-term continuous use. The subphase in the silicon carbide sintered body is preferably granular crystal phases dotted among a plurality of the primary phases. This provides excellent lubricating liquid holding performance as well as excellent thermal conductivity and excellent thermal shock resistance properties.

Sliding member, manufacturing method thereof, mechanical seal ring using sliding member and mechanical seal using mechanical seal ring

Provided is a sliding member which includes a plurality of open pores in a sliding surface, which each comprises one or more opening portions having a circularity of 0.24 or more and a circle equivalent diameter of 10 &#x3bc;m to 150 &#x3bc;m. A ratio of the number of open pores having the overlapping degree of 10% or more between the opening portions is 3% or less. Another sliding member includes a plurality of open pores in a sliding surface, which each comprises one or more opening portions having a circularity of 0.24 or more and a circle equivalent diameter of not less than 10 &#x3bc;m nor more than 78 &#x3bc;m. A coefficient of variation of the opening portions satisfies the following equation: 1.03&#x2266;&#x221a;V/X&#x2266;1.51 where &#x221a;V is a standard deviation of circle equivalent diameters, and X is an average value of the circle equivalent diameters. A mechanical seal ring, a mechanical seal and a faucet valve each using the sliding member are also provided.

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Kirishima, Japan

Yuusaku Ishimine