Asahi Kasei Microdevices Corporation

Yuukou Tsushima

Toshiro Sakamoto

Tomohiro Gunji

The object of the present invention is to provide a current source which is capable of suppressing an increase in circuit size and by which a highly accurate constant current extremely stable to manufacturing variations or temperature fluctuations can be obtained. A current source circuit is provided with a nonvolatile storage element having a control gate region and a source region and operating as a field-effect transistor, and is configured to output a current in a state where a bias is applied between the control gate region and the source region.

Current source with nonvolatile storage element

This invention aims at providing a temperature characteristic adjustment circuit capable of adjusting the temperature characteristic to various positive and negative temperature characteristics with an excessively small characteristic variation and capable of suppressing an increase in the chip area and the current consumption with a simple circuit configuration. A temperature characteristic adjustment circuit has a current source having a nonvolatile storage element having a control gate region and a source region and driven by the application of a bias between the control gate region and the source region and an output circuit not having a nonvolatile storage element, in which the temperature dependency of an output signal originating from the temperature dependency of the current amount of a current output from the current source is adjusted by the nonvolatile storage element.

Temperature characteristic adjustment circuit

The object of the present invention is to provide a nonvolatile storage element capable of suppressing retention degradation. A nonvolatile storage element is provided with a semiconductor substrate and a floating gate provided above the semiconductor substrate, in which the floating gate has an area of 30 &#x3bc;mor more.

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Tokyo, Japan

Yuukou Tsushima