Kyocera Corporation

Yuuko Yokota

Kiyohiro Iioka

Wataru Koga

Motoki Ito

Yoshifumi Yamagata

Masayuki Funami

Takanori Ikuta

Shigehiko Nagamine

Takeshi Takenoshita

Motoki Itou

Daisuke Makibuchi

Kouichi Maruta

Yuuji Mori

Kiyo Yamahara

Hiroki Kan

A duplexer has an antenna terminal, a first terminal, and second terminals and provided with a first filter arranged between the antenna terminal and first terminal and including a parallel resonator for forming a ladder type filter circuit, a second filter arranged between the antenna terminal and the second terminal and having a passband higher than a passband of the first filter, and an electromagnetic coupling element arranged between the parallel resonator of the first filter and a ground part and electromagnetically coupled with the antenna terminal.

Duplexer, communication module component, and communication device

The branching filter has the piezoelectric substrate having the main surface on which there are formed a transmission filter, which includes an input electrode and an antenna electrode, and a reception filter, which includes an output electrodes and the antenna electrode. The branching filter also has the mounting substrate having, on a first main surface, a first electrode group that is connected to the transmission filter and reception filter and that is formed symmetrical with respect to a line when viewed from the above, and also having, on a second main surface locating on the opposite side to the first main surface, a second electrode group that is connected to the circuit interconnects of an external circuit board and that is formed symmetrical with respect to a line when viewed from the above.

Electronic device

An IDT electrode () on a piezoelectric substrate () has an electrode including first metal layers () formed of titanium or a titanium alloy, or chromium or a chromium alloy and second metal layers () formed of aluminum or an aluminum alloy, copper or a copper alloy, or gold or a gold alloy, which are laminated alternately. The orientation degrees in the first metal layer () that is closest to the surface of the piezoelectric substrate () in the first metal layers () and the second metal layer () that is closest to the surface of the piezoelectric substrate () in the second metal layers () are higher than the orientation degrees in the upper metal layers. As compared with the prior art where the orientation degrees in the first metal layers () and the second metal layers () are not considered, the power handling capability of the IDT electrode () can be significantly improved.

Surface acoustic wave element and communication device

A surface acoustic wave device includes a first surface acoustic wave filter forming a ladder filter circuit; and a second surface acoustic wave filter having a passband at a frequency range higher than that of the first surface acoustic wave filter. The first surface acoustic wave filter includes a series-arm surface acoustic wave resonator, a parallel-arm surface acoustic wave resonator and an additional surface acoustic wave resonator. The series-arm surface acoustic wave resonator is on a series arm of the ladder filter circuit and includes an IDT electrode. The parallel-arm surface acoustic wave resonator is on a parallel arm of the ladder filter circuit and includes an IDT electrode. The additional surface acoustic wave resonator includes an IDT electrode, is connected in parallel with the series-arm surface acoustic wave resonator, and has a resonance frequency higher than the frequency range of the passband of the second surface acoustic wave filter.

Surface acoustic wave device and duplexer and communication device using the same

A second substratecomposed of a material having a lower dielectric constant than that of a piezoelectric substratehaving a transmission-side filter regionand a receiving-side filter regionformed therein is joined to the other main surface of the piezoelectric substrate, and a conductor layeris formed throughout the other main surface of the second substrate. The effective dielectric constant of the substrate is reduced, thereby making it possible to reduce a parasitic capacitance formed between an input electrode sectionin the transmission-side filter regionand an output electrode sectionin the receiving-side filter regionand to improve isolation characteristics.

Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment

A filter device includes a circuit board having a pattern electrode; a substrate having a filter to which a signal line for inputting or outputting a signal and a reference potential line having a reference potential are connected, and a pad electrode connected to the filter, the substrate being mounted on the circuit board such that the pad electrode and the pattern electrode face each other; and a connection part formed of the pad electrode, the pattern electrode, and a conductive member formed between the pattern electrode and the pad electrode to electrically connect the pattern electrode to the pad electrode, wherein the connection part is arranged to connect the signal line to the reference potential line.

Filter device, multiband filter, duplexer and communications equipment using the filter device

Terminal electrodesfor carrying a high frequency deviceare formed on a surface of a circuit board having its reverse surface covered with a reverse surface conductor layer, and a plurality of signal linesfor exchanging a signal between the high frequency deviceand an external circuit are formed thereon. The terminal electrodeis arranged at the center of the circuit board, and the signal linesradially extends from the terminal electrode. Electromagnetic interference between the signal linescan be reduced, so that out-of-band attenuation characteristics and isolation characteristics can be satisfactorily exhibited in a case where the high frequency deviceis a duplexer.

High frequency device mounting substrate and communications apparatus

Disclosed is a surface acoustic wave resonator which comprises, on a piezoelectric substrate, an IDT electrodeincluding bus bar electrodes, reflector electrodesdisposed to be adjacent to both sides of the IDT electrodein a main propagation direction F of surface acoustic waves at the IDT electrode, and auxiliary reflector electrodesthat are disposed at four positions external to the reflector electrodeson virtual straight lines extending from the bus bar electrodesof the IDT electrodein an inclined manner so that the periodic direction G of periodically arranged electrodesis oriented toward the IDT electrode

Surface acoustic wave resonator, surface acoustic wave filter and surface acoustic wave duplexer, and communications equipment

After electrode patterning on an electrode forming surface of a piezoelectric substrate(FIG.()), a conductor layer is formed on an electrode non-forming surface of the piezoelectric substrate(FIG.()). After forming the conductor layer, the conductor layer formed on the other surface is removed (FIG.()) after at least one step (FIG.()), and thereafter, dicing for separation into elements and mounting on a mounting substrate are carried out. By removing all the conductor layer on the other surface of the piezoelectric substrate, the out-of-passband attenuation and isolation performance can be significantly improved.

Surface acoustic wave device manufacturing method, surface acoustic wave device, and communications equipment

An IDT electrode, and an input electrode sectionand an output electrode sectioneach connecting with the IDT electrodeare formed in a filter region on one main surface of a piezoelectric substrate, and a semiconductor layeris formed on the other main surface opposite to the one main surface of the piezoelectric substrate. The semiconductor layermakes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.

In a surface acoustic wave element, in which IDT electrodesand, a grounding electrode, etc. are formed one main surface of a piezoelectric substrate, resistorsmade of a semiconductor are provided to connection electrodesthat interconnect the respective electrodes. By forcing the charges generated in the IDT electrodes to move via the resistors, it is possible to provide a compact, highly reliable surface acoustic wave apparatus capable of preventing an electrostatic discharge damage in the IDT electrodes.

Surface acoustic wave apparatus and communications device

A conductor layeris provided so as to prevent pyroelectric destruction occurring in the steps of manufacturing a surface acoustic wave elementon the other surface opposite to an IDT electrode formation surface of a piezoelectric substrate. At this time, the conductor layeris formed, except for a regionopposed to an input electrode sectionin a filter regionand/or a regionopposed to an output electrode section. This allows a coupling amount between the input electrode sectionand the output electrode sectiondue to a parasitic capacitance formed between the input electrode sectionand the output electrode sectionin the filter regionto be reduced, thereby allowing the out-of-band attenuation characteristics of a surface acoustic wave device to be improved.

Surface acoustic wave device, manufacturing method therefor, and communications equipment

In a surface acoustic wave device according to the present invention, a transmitting filter element TX and a receiving filter element RX are formed on one main surface of a piezoelectric substrate, and are mounted by face down on an upper surface of a circuit board. A ground electrodein the receiving filter element RX is connected to three linear via conductors' formed on the circuit board, and a ground electrodein the transmitting filter element TX is connected to a crank-shaped via conductor&#x2032; formed on the circuit board

Growing community of inventors

Kyoto, Japan

Yuuko Yokota