Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Kobelco Research Institute, Inc.

Sony Corporation

Yuuki Tauchi

Junichi Nakai

Katsutoshi Takagi

Toshiki Sato

Hideo Fujii

Yoko Shida

Hitoshi Matsuzaki

Takeshi Miki

Mototaka Ochi

The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

AG base alloy thin film and sputtering target for forming AG base alloy thin film

Disclosed is a read-only optical information recording medium which comprises a reflective film having a reflectance suitable for use as a reflective film for an optical information recording medium (e.g., BD-ROM) and having excellent reproduction stability, and which utilizes a blue laser beam. Specifically disclosed is a read-only optical information recording medium comprising a reflective film, wherein the reflective film comprises an Al-based alloy containing at least one element selected from Si and Ge in an amount of 5 to 40 at. %.

Optical information recording medium and sputtering target for forming reflective film for optical information recording medium

Provided is a read-only optical information recording medium (for instance, a dual-layer BD-ROM), which uses blue laser and is provided with a reflecting film which has sufficiently high reflectivity while ensuring optical transparency required in manufacture, has excellent reproduction stability when used for an optical information recording medium and has excellent durability. The read-only optical information recording medium includes a structure wherein a plurality of laminated layers of the reflecting film and the optical transparent layer are formed on a substrate, and reproduces information by means of blue laser. The reflecting film closest to the substrate among the reflecting films is substantially composed of an Al-based alloy containing 0.5-3.0 atm % of Ti, and has a film thickness of 10 nm or more but not more than 30 nm.

Read-only optical information recording medium and sputtering target for depositing reflective film for the optical information recording medium

To avoid a phenomenon of deterioration which is characteristic to an organic EL display device, such as a dark spot, without forming a pin hole in an organic material used for forming an organic EL layer. A reflective anode for an organic EL display device includes: an Ag-based alloy film () containing 0.01 to 1.5 atomic % of Nd and formed on a substrate (); and an oxide conductive film () formed on the Ag-based alloy film () and in direct contact with the film ().

Reflective anode and wiring film for organic EL display device

An optical recording medium includes: a substrate; an information recording layer that is formed on the substrate and that has a recording film, which contains Zn or Al, Pd, and oxygen and in which the amount of oxygen is larger than that in a stoichiometric composition when Zn or Al is completely oxidized to become ZnO or AlO; and a light transmissive layer formed on the information recording layer.

Optical recording medium

A recording layer for an optical information recording medium, which has a high reflectance (initial reflectance) and excellent recording characteristics; an optical information recording medium comprising the recording layer; and a sputtering target useful for forming the recording layer. The recording layer for an optical information recording medium, on which recording is performed by irradiation of laser light, is characterized by containing indium (In) oxide and palladium (Pd) oxide which includes palladium monoxide and palladium dioxide. The recording layer for an optical information recording medium is also characterized in that the ratio of Pd atoms contained in the recording layer relative to the total of In atoms and Pd atoms contained therein is 6-60 atom %.

Recording layer for optical information recording medium, optical information recording medium, and sputtering target

Ag base alloy thin film and sputtering target for forming Ag base alloy thin film

An Ag sputtering targethas three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering targetin planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values Aand Busing the formula below, and selecting larger one of the values Aand Bas the three-dimensional fluctuation of the grain sizes.1=()/&#xd7;100(%)1=()/&#xd7;100(%)

AG base sputtering target and process for producing the same

The sputtering target made of a Ag&#x2014;Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[I/I+I+I+I)]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.

Ag-Bi-base alloy sputtering target, and method for producing the same

An Ag sputtering targethas three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering targetin planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes.1=()/&#xd7;100(%)1=()/&#xd7;100(%)

Ag base sputtering target and process for producing the same

The present invention has been completed in view of such situation, and an object of the present invention is to find a Ag based alloy which exhibits high cohesion resistance, high light resistance, high heat resistance, high reflectivity, high transmissivity, low absorptivity, and high thermal conductivity of the level which had not been realized by the pure Ag or by the conventional Ag alloys, and on the bases of such alloy, to provide a semi-reflective film and a reflective film for an optical information recording medium provided with excellent writing/reading properties and long term reliability; sputtering target for an optical information recording medium used in depositing such semi-reflective film and the reflective film; and an optical information recording medium provided with such semi-reflective film or the reflective film. A semi-reflective film or reflective film for an optical information recording medium comprising a Ag based alloy, wherein the Ag based alloy comprises 0.005 to 0.40% (at % unless otherwise noted) of Bi and 0.05 to 5% in total of at least one element selected from Zn, Al, Ga, In, Si, Ge, and Sn.

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Kobe, Japan

Yuuki Tauchi