Other

Renesas Technology Corp.

Yuuki Kamiura

Mahito Sawada

Hiroshi Tobimatsu

Hiroyuki Kawata

Kouji Oda

Koji Shibata

Kouji Shibata

Seiji Okura

An interconnection is formed on a semiconductor substrate having a semiconductor element formed thereon. Next, a passivation film is formed on the semiconductor substrate including the interconnection. Further, a polyimide film, which is served as a buffer coating film, is formed on the passivation film. Further, the polyimide film is patterned. Next, the passivation film is subject to etching while the patterned polyimide film is taken as a mask. Next, a hardened layer, which is formed on the surface of the polyimide film as a result of etching, is removed through ashing process. Next, the semiconductor substrate after ashing process is cured so as to transform the polyimide film into imide.

Method of manufacturing semiconductor device having passivation film and buffer coating film

A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor elements on a semiconductor substrate, forming on the semiconductor elements a plurality of interconnections with top protective layers side by side to electrically connect the semiconductor elements, forming a protective insulating film by CVD other than HDP-CVD to cover top and side surfaces of the interconnections and a bottom surface of a gap between the interconnections, and forming an insulating film by HDP-CVD to cover the protective insulating film and to fill in the gap between the interconnections covered with the protective insulating film.

Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device is provided, which prevents a polyimide film from coming unstuck from a film to be subjected to isotropic etching, and further prevents deposits adhered to respective side faces of the films from coming off, during a heat treatment for imidizing the polyimide film. Isotropic etching is performed on a silicon nitride film using, as a mask, a polyimide film having a predetermined pattern formed therein. Next, a heat treatment is carried out to imidize the polyimide film prior to performing anisotropic etching on a silicon oxide film . During the heat treatment for imidizing the polyimide film , since deposits, which are to be generated by anisotropic etching, are not yet adhered to the respective side faces of the films, the polyimide film does not come unstuck from the silicon nitride film . Further, the deposits which are adhered to the respective side face of the films after the heat treatment will not come off.

Method of manufacturing semiconductor device

Growing community of inventors

Hyogo, Japan

Yuuki Kamiura