Tdk Corporation

Futaba Corporation

Yuuki Aburakawa

Tatsuo Namikawa

Hitoshi Saita

Shigeaki Tanaka

Katsuyuki Kurachi

Junji Aotani

Kazuhiro Yoshikawa

Akiyasu Iioka

Kenichi Yoshida

Yoshihiko Minachi

Noboru Ito

Naoki Mori

Yoshinori Fujikawa

Keisuke Watanabe

Daisuke Takeuchi

Mitsufumi Kodama

Satoko Ueda

Shigeki Yanagida

Suguru Andoh

Atsuo Matsutani

Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.

Thin film capacitor having a dielectric layer having a through hole whose inner surface has first and second tapered surfaces, circuit board incorporating the same, and thin film capacitor manufacturing method

Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

Thin film capacitor, circuit board incorporating the same, and thin film capacitor manufacturing method

A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 &#x3bc;m or more and 8 &#x3bc;m or less.

Thin film capacitor, manufacturing method therefor, and substrate with built-in electronic component

Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.

Thin film capacitor and circuit board incorporating the same

Disclosed herein is a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer positioned between the lower electrode layer and the upper electrode layer. The upper electrode layer has a first capacitive electrode part opposed to the lower electrode layer through the dielectric layer without being connected to the lower electrode layer and a fiducial mark part penetrating the dielectric layer to be connected to the lower electrode layer.

Thin film capacitor and multilayer circuit board having the thin film capacitor embedded therein

An electronic device sheet, comprising a pair of electrodes, a dielectric layer provided between the pair of electrodes, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the insulation patch member includes a boundary line having an undulating shape.

Electronic device sheet

A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.

Thin film capacitor

A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 &#x3bc;m.

Thin film capacitor with improved resistance to dielectric breakdown

A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers.

A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.

A sintered ferrite magnet having a ferrite phase with a hexagonal structure as the main phase, wherein the composition of the metal elements composing the main phase is represented by the following general formula (1):RCaA(FeM): &#x2003;&#x2003;(1),x, m, y and z in formula (1) satisfying all of the conditions represented by the following formulas (2)-(6):0.2&#x2266;&#x2266;0.5: &#x2003;&#x2003;(2)0.13&#x2266;&#x2266;0.41: &#x2003;&#x2003;(3)0.70.15: &#x2003;&#x2003;(4)0.18&#x2266;&#x2266;0.31: &#x2003;&#x2003;(5)9.6&#x2266;12&#x2266;11.8: &#x2003;&#x2003;(6),and wherein the density of the sintered ferrite magnet is at least 5.05 g/cm, and the crystal grains of the sintered ferrite magnet satisfy all of the conditions represented by the following formulas (7) and (8), where L &#x3bc;m is the average for the maximum value and S &#x3bc;m is the average for the minimum value among the diameters passing through the center of gravity of each grains in the crystal cross-section parallel to the c-axis direction of hexagonal structures.&#x2266;0.95: &#x2003;&#x2003;(7)1.8&#x2266;&#x2266;2.5: &#x2003;&#x2003;(8).

Ferrite sintered magnet

A display apparatus comprises a display unit which has a plurality of organic EL elements two-dimensionally arranged to define pixels. Each organic EL element comprises a first electrode, an organic EL layer, and a second electrode laminated in order on an optically transparent substrate. One of the first electrode and second electrode is an optically transparent electrode, while the other is a non-optically transparent electrode. The non-optically transparent electrode is disposed to exist only in part of each pixel, as viewed from vertically above (for example, the width of the electrode is made smaller than the width of a pixel). In this way, the display unit can transmit light through portions of the pixels in which the non-optically transparent electrodes are not disposed. Preferably, the non-optically transparent electrode includes a mirror surface opposite to the organic EL layer.

Organic EL display apparatus

The present invention provides a ferrite magnetic material capable of attaining such magnetic properties that Br+(&#x2153;)HcJ is 6200 or more even by sintering at a temperature of 1150&#xb0; C. or lower. The ferrite magnetic material includes as a main phase thereof a ferrite phase having a hexagonal structure, the main phase being represented by the following composition formula (1): LaCa&#x3b1;(FeCo)with &#x3b1; representing one or two of Ba and Sr; wherein the constituent ratios of the metal elements constituting the main phase satisfy the following conditions: x and m are the values in a region bounded by the points, A: (0.53, 0.27), B: (0.64, 0.27), C: (0.64, 0.35), D: (0.53, 0.45), E: (0.47, 0.45) and F: (0.47, 0.32) in the (x, m) coordinates shown in FIG.; 1.3&#x2266;x/yz&#x2266;1.8; and 9.5&#x2266;12z&#x2266;11.0.

Growing community of inventors

Tokyo, Japan

Yuuki Aburakawa