Sumco Corporation

Yuuji Tsutsumi

Yasuhito Narushima

Fukuo Ogawa

Shinichi Kawazoe

Koichi Maegawa

Yasufumi Kawakami

Toshirou Kotooka

A production method of monocrystalline silicon includes: measuring an emissivity of an inner wall surface of a top chamber; and determining a target resistivity of monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon. In determining the target emissivity on a crystal center axis at a position for starting formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is 0.4 or less, the target resistivity is determined to be less than a resistivity value of 3.0 m&#x3a9;&#xb7;cm when the dopant is arsenic.

Production method of monocrystalline silicon based on an emissivity of a production apparatus

An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 m&#x3a9;cm or more and 1.05 m&#x3a9;cm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 m&#x3a9;m or more and less than 0.6 m&#x3a9;cm.

N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer

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Nagasaki, Japan

Yuuji Tsutsumi