Sony Semiconductor Solutions Corporation

Sony Corporation

Yuuji Nishimura

Takeshi Yanagita

Masaaki Takizawa

Shinichi Arakawa

Yohei Chiba

Yuugo Nakamura

Hiroshi Horikoshi

Yuichi Seki

Masaya Shimoji

Iwao Sugiura

Atsushi Matsushita

Kazuto Watanabe

Kouichi Itabasi

Syota Yamabata

Mitsuru Ishikawa

Yoichi Ootsuka

Yoshiaki Kitano

Toyomi Jinwaki

Yosuke Takita

Takashi Nakashikiryo

Ryou Chiba

Takafumi Nishi

A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.

Imaging element, driving method, and electronic device

The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.

Solid-state imaging element and method for manufacturing the same, and electronic device

The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.

Manufacturing method of semiconductor device, semiconductor device and electronic apparatus

Growing community of inventors

Kumamoto, Japan

Yuuji Nishimura