Kabushiki Kaisha Toshiba

Toshiba Energy Systems & Solutions Corporation

Yuuji Hisazato

Hitoshi Matsumura

Atsushi Yamamoto

Yo Sasaki

Kazuya Kodani

Daisuke Hiratsuka

Tsuneji Kameda

Naotake Watanabe

Hiroki Sekiya

Nobumitsu Tada

Than Trong Long

Yoshiyasu Ito

Takahiko Shindo

Hiroaki Ito

Naotaka Iio

Kazuma Mukai

Kazuyasu Takimoto

Yuta Ichikura

Satoshi Namba

Toshiharu Ohbu

Naoki Yamanari

According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

Semiconductor device

According to one embodiment, a semiconductor device includes a semiconductor element, amounting substrate which has wiring layers containing copper, and a joining layer which is provided between the semiconductor element and the wiring layer and made of an alloy containing copper and metal other than copper, and in which a melting point of the alloy is higher than a melting point of the metal.

Semiconductor device and method of manufacturing the same

According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal.

Semiconductor device and method for manufacturing the same

According to one embodiment, the semiconductor device in the embodiment has an assembly substrate, a semiconductor chip, and a jointing layer. The semiconductor chip is joined to the assembly substrate via the jointing layer. An intervening diffusion barrier layer may be interposed between the chip and jointing layer. The jointing layer is an alloy layer mainly made of any metal selected from Sn, Zn and In or an alloy of Sn, Zn and In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V and any metal selected from Sn, Zn and In, where the alloy has a higher melting temperature than that of Sn, Zn and In or an alloy of Sn, Zn and/or In.

Semiconductor device and manufacturing method of semiconductor device

A composite bearing memberincludes: a bearing sliding materialwhose surface contacts a rotating portion; a bearing base materialmade of a material different from a material constituting the bearing sliding material; and a joining layerjoining the bearing sliding materialand the bearing base material. Further, the bearing sliding materialhas a sliding layersliding the rotating portion on a surface. Furthermore, the bearing sliding materialhas, between the sliding layerand the joining layer, a composition graded layerwhich dispersedly contains the same metal material as a metal material constituting the joining layerand in which a content of the metal material is increased toward the joining layer

Composite bearing member, manufacturing method of composite bearing member, bearing device and rotary electrical machine

The present invention is to provide an anisotropic porous material for a fluid filter which can perform a separation process of a large amount of fluid with high accuracy, which can achieve high flux, and which can improve detergent properties. The anisotropic porous material includes a plurality of pores. Each of the pores has an anisotropic shape in which a major axis and a minor axis can be defined. An arrangement of the pores has an orientation.

Anisotropic porous material

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Tokyo, Japan

Yuuji Hisazato