Kyocera Corporation

Yuuichiro Hayashi

Katsuaki Masaki

Yutaka Kuba

Chiaki Domoto

Daisuke Ueyama

Kouji Miyamoto

A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.

Method of producing crystal

A method for producing a crystal, according to the present invention, where the lower surfaceB of a seed crystalwhich is rotatably arranged and made of silicon carbide is brought into contact with a solutionof silicon solvent containing carbon in a cruciblewhich is rotatably arranged and the seed crystalis pulled up and a crystal of silicon carbide is grown from the solutionon the lower surfaceB of the seed crystalcomprising the steps of bringing the lower surfaceB of the seed crystalinto contact with the solutionin a contact step, rotating the seed crystalin a seed crystal rotation step, rotating the cruciblein a crucible rotation step, and stopping rotation of the cruciblewhile the seed crystalis rotated in the state in which the lower surfaceB of the seed crystalis in contact with the solutionin a deceleration step.

Method for producing crystal

A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.

Growing community of inventors

Kyoto, Japan

Yuuichiro Hayashi