Fujitsu Semiconductor Limited

Transphorm Japan, Inc.

Yuuichi Satou

Toshiya Sato

Shinichi Akiyama

Yoshitaka Watanabe

Kenji Nukui

Tsutomu Hosoda

Mutsumi Katou

Tetsuya Itou

Yoichi Fujisawa

A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Compound semiconductor device and method of manufacturing same

Method of manufacturing compound semiconductor device with gate electrode forming before source electrode and drain electrode

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Yokohama, Japan

Yuuichi Satou