Kabushiki Kaisha Toshiba

Yuuichi Oshino

Tomoko Matsudai

Tsuneo Ogura

Kazutoshi Nakamura

Ryohei Gejo

Yoshiko Ikeda

Bungo Tanaka

According to one embodiment, a semiconductor device includes a first and second electrode, a first, second, third and fourth semiconductor region, and a first intermediate metal film. The first region is provided above the first electrode and has a first impurity concentration. The second region is provided above the first region and has a second impurity concentration lower than the first impurity concentration. The third region is provided above the second region and has a third impurity concentration. The fourth region is provided above the second region and has a fourth impurity concentration lower than the third impurity concentration. The second electrode is provided above the third region and the fourth region and is in ohmic contact with the third region. The intermediate metal film is provided between the second electrode and the fourth region. The intermediate metal film forms Schottky junction with the fourth region.

Semiconductor device with diode

According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode.

Semiconductor device

According to one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer provided in a portion on the first semiconductor layer, a first insulating layer provided on the first semiconductor layer on a terminal region side of the second semiconductor layer, a third semiconductor layer provided on the first semiconductor layer on the terminal region side of the first insulating layer, a second insulating layer provided on the first semiconductor layer on the terminal region side of the third semiconductor layer, a fourth semiconductor layer provided between the first semiconductor layer and the second insulating layer, and a plurality of field plate electrodes provided inside an inter-layer insulating film, the plurality of field plate electrodes having mutually-different distances from the first semiconductor layer.

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Tokyo, Japan

Yuuichi Oshino