Hitachi, Ltd.

Yuuichi Madokoro

Yoshimi Kawanami

Kaoru Umemura

Michinobu Mizumura

Akira Shimase

Fumikazu Itoh

Junzou Azuma

Takashi Kamimura

Yuuichi Hamamura

Shoji Shukuri

Satoshi Tomimatsu

Masaaki Futamoto

Tohru Ishitani

Masahiro Moniwa

Yukio Honda

Eiichi Murakami

Masahiko Hiratani

Yasuo Wada

Kazumasa Takagi

Nobuyoshi Natsuaki

Masanobu Miyao

Tsuyoshi Ohnishi

Toshiyuki Aida

Tokuumi Fukazawa

Terunori Warabisako

Katsuki Miyauchi

Masao Tamura

Kiyonori Ohyu

Tadashi Suzuki

In a projection ion beam machining apparatus having a liquid metal ion source, a combination of two or three electrostatic lenses arranged between the liquid metal ion source and a sample and a stencil mask exchangeably arranged in the combination of the electrostatic lenses, when a distance from substantial center of the electrostatic lens most proximate to the ion source and an ion emitting portion of the ion source is designated by Lo, a distance from the substantial center of the electiostatic lens most proximiate to the sample and the surface of the sample is designated by Li and a distance between the substantial centers of the two lenses is designated by L, by making a value of (L/Lo)(L/Li) equal to or larger than 400, current density on the sample of ion beam accelerated to several 10 kV for projecting a pattern of a stencil mask can be made equal to or larger than 20 mA per 1 square cm and resolution of edge can be made equal to or smaller than 0.2 &mgr;m when the size of the ion beam is 5 &mgr;m. As a result, a region having a size equal to or smaller than several 10 &mgr;m can be machined at speed several times or more as fast as that of FIB having equivalent machining accuracy.

Projection ion beam machining apparatus

A processing method using a plasma ion source for generating a focused ion beam, characterized by covering, with an insulator, an inner wall of a plasma holding vessel excluding a reference electrode for applying a voltage to a plasma and an ion extraction electrode for extracting ions from the plasma, and employing means of continuously controlling the absolute value of an ion beam current in a range of from 1 to 10 .mu.A by changing the absolute value of an ion extraction voltage applied between the reference electrode and the ion extraction electrode in a range of from 0 to 100 V; and an apparatus for carrying out the processing method. This is advantageous in stabilizing the ion beam current and in preventing the ion beam from being made dim even when the current value of the ion beam is changed.

Processing method and apparatus using focused ion beam generating means

A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.

Process method and apparatus using focused ion beam generating means

A method for device transplantation includes the conveyance of a microminiature device, which has been premanufactured, to a desired place located on a sample, observation and fabrication of the new device with a focused beam, and repair of passive elements or active elements located on the sample. Additionally, the new microminiature devices may be transplanted based on the observed results.

Methods for device transplantation

A weak-link Josephson junction is of the type employing a thin film of an oxide superconductor, in which a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary is formed concretely by a method in which atoms of different species are deposited on the predetermined part of the surface of a substrate, the predetermined part of the surface of a substrate is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate, whereupon the superconducting thin film is epitaxially grown on the substrate, or by a method in which the predetermined part of the superconducting thin film, epitaxially grown on a substrate, is diffused with atoms of different species hampering a superconductivity, or the predetermined part of the superconducting thin film is disturbed, whereupon the superconducting thin film is annealed.

Method of forming weak-link Josephson junction, and superconducting

Of an amorphous Si film, a region to be formed into a lowly doped region such as the channel region of an MOS transistor is covered with a mask and an uncovered region is doped with an impurity. After this, the amorphous Si film is annealed and turned to signal crystal through solid phase epitaxial growth, and the mask itself is used as the electrode of a semiconductor device. By this impurity doping, a large-sized single-crystal Si film can be formed, and the impurity doping can be conducted in self-alignment with the electrode formation to produce a highly integrated semiconductor circuit.

SOI process for forming a thin film transistor using solid phase epitaxy

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Kokubunji, Japan

Yuuichi Madokoro