Fuji Electric Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Yuuichi Harada

Naoki Kumagai

Yoshihiro Ikura

Tatsuhiko Fujihira

Kazuhiko Yoshida

Shinichi Jimbo

Ryuu Saitou

Hiroshi Kanemaru

A semiconductor device is configured to prevent destruction of elements and/or miss-operation of the circuit by parasitic effects produced by parasitic transistors when a MOSFET of a bridge circuit is formed on a single chip. A Schottky junction is formed by providing an anode electrode in an n well region where a source region, a drain region, and a p well region of a lateral MOSFET. A Schottky barrier diode constituting a majority carrier device is connected in parallel with a PN junction capable of being forward-biased so that the PN junction is not forward-biased so that minority carriers are not generated, and thereby suppressing parasitic effects.

High power semiconductor device having a schottky barrier diode

A lateral MOSFET and a method of forming thereof includes a p-type semiconductor substrate, a first n-type well in the surface portion of the semiconductor substrate, an n-type drain region in the first n-type well, a p-type well in the first n-type well, an n-type source region in the p-type well, a gate oxide film on the portion of the p-type well between the n-type source region and the first n-type well, a gate electrode on the gate oxide film, and a second n-type well containing the p-type well therein to increase the n-type impurity concentration in the vicinity of the junction between the p-type well and the first n-type well beneath the gate and to increase the impurity amount and the thickness of the n-type semiconductor region beneath the p-type well. The first and second n-type wells can be overlapping or formed continuous or contiguous with each other. The lateral MOSFET exhibits a high punch-through breakdown voltage suitable for a high-side switch.

Semiconductor device and method of manufacturing the same

High power semiconductor device having a Schottky barrier diode

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Nagano, Japan

Yuuichi Harada