Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Yuugo Goto

Toru Takayama

Junya Maruyama

Shunpei Yamazaki

Yumiko Ohno

Yumiko Fukumoto

Hideaki Kuwabara

Yasuyuki Arai

Takuya Tsurume

Akio Yamashita

Masayuki Sakakura

Ryota Tajima

Takuya Miwa

Hiroyuki Miyake

Yoshiharu Hirakata

Daisuke Kurosaki

Noriko Shibata

Yuko Kobayashi

Mai Akiba

Minoru Takahashi

Hongyong Zhang

Yumiko Yoneda

Kiyoshi Kato

Atsuo Isobe

Toshihiko Saito

Kazuo Nishi

Akio Endo

Tomoyuki Aoki

Yoshifumi Tanada

Hiroki Adachi

Koji Dairiki

Akira Ishikawa

Keitaro Imai

Tsutomu Murakawa

Teruyuki Fujii

Junya Goto

Yuko Tachimura

Etsuko Arakawa

Satoshi Teramoto

Masaaki Hiroki

Tatsuya Arao

Yoshitaka Yamamoto

Naoaki Yamaguchi

Yoshitaka Dozen

Daiki Yamada

Eiji Sugiyama

Michiko Takei

Katunobu Awane

Tomoko Tamura

Toshimasa Hamada

Tatsuya Ohori

Nozomi Horikoshi

Hideki Katsura

A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

Semiconductor device

In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery which is resistant to external force in obtained. An opening is provided in a central portion of the secondary battery, and a terminal is formed in the opening. An outer edge of the secondary battery is fixed by thermocompression bonding. In addition, the central portion of the secondary battery is fixed by thermocompression bonding, so that the amount of bending is limited even when the outer edge portion of the secondary battery is bent.

Electronic device including secondary battery

In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery that is durable even when force is externally applied thereto is provided. A cushioning material is provided in a region surrounded by an exterior body of a secondary battery. Specifically, a cushioning material is provided on the periphery of a current collector such that a sealing portion of an exterior body (film) is located outside the cushioning material.

Electronic device with secondary battery

In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery which is resistant to external force is obtained. An opening is provided in a central portion of the secondary battery; and a terminal is formed in the opening. An outer edge of the secondary battery is fixed by thermocompression bonding. In addition, the central portion of the secondary battery is fixed by thermocompression bonding, so that the amount of bending is limited even when the outer edge portion of the secondary battery is bent.

Secondary battery comprising the opening

To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

Vehicle, display device and manufacturing method for a semiconductor device

To provide a method of manufacturing an optical film formed on a plastic substrate. There is provided a method of manufacturing an optical film including the steps of laminating a separation layer and an optical filter on a first substrate, separating the optical filter from the first substrate, attaching the optical filter to a second substrate. Since the optical film manufactured according to the invention has flexibility, it can be provided on a portion or a display device having a curved surface. Further, the optical film is not processed at high temperatures, and hence, an optical film having high yield with high reliability can be formed. Furthermore, an optical film having an excellent impact resistance property can be formed.

Method of manufacturing optical film

A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate ()) and a layer including the element (peeled layer ()) is filled with coagulant (typically an adhesive) that serves as a second bonding member (), and the substrate used as a form (third substrate ()) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer ()) by the coagulated adhesive (second bonding member ()) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

Semiconductor device and method of manufacturing the same

In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery which is resistant to external force is obtained. An opening is provided in a central portion of the secondary battery, and a terminal is formed in the opening. An outer edge of the secondary battery is fixed by thermocompression bonding. In addition, the central portion of the secondary battery is fixed by thermocompression bonding, so that the amount of bending is limited even when the outer edge portion of the secondary battery is bent.

Growing community of inventors

Kanagawa, Japan

Yuugo Goto