Canon Anelva Corporation

Yuto Watanabe

Masahiro Shibamoto

Hiroshi Yakushiji

Yuzuru Miura

A plasma processing apparatus includes a processing chamber configured to process a substrate, a plasma generator configured to generate a plasma, a transport unit configured to transport, to the processing chamber, the plasma generated by the plasma generator, and a scanning magnetic field generator configured to generate a magnetic field which deflects the plasma so as to scan the substrate by the plasma. The scanning magnetic field generator is configured to be capable of adjusting a center of a locus of the plasma.

Plasma processing apparatus and plasma processing method

A vacuum arc deposition apparatus for forming a ta-C film on a substrate using arc discharge includes a holding unit that holds a target unit, an anode unit into which electrons emitted from the target unit flow, and a power supply that supplies, between the target unit and the anode unit, a current for generating a plasma by arc discharge. The current supplied by the power supply at the time of the arc discharge is generated by superimposing, on a DC current, a pulse current of a pulse frequency not higher than 140 Hz.

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Chofu, Japan

Yuto Watanabe