Mitsubishi Materials Corporation

Yuto Toshimori

Shozo Komiyama

Ichiro Shiono

Atsushi Saito

Sohei Nonaka

Hideharu Matsuzaki

Hiromi Nakazawa

Yujiro Hayashi

Hiroshi Ishii

A multilayer reflection electrode film includes a Ag film that is formed of Ag or an Ag alloy; and a transparent conductive oxide film that is disposed on the Ag film, in which the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two or more elements selected from the group consisting of Sn, Y, and Ti.

Multilayer reflection electrode film, multilayer reflection electrode pattern, and method of forming multilayer reflection electrode pattern

A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.

Ag alloy sputtering target and Ag alloy film manufacturing method

An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities.

Ag alloy sputtering target, method of manufacturing Ag alloy sputtering target, Ag alloy film, and method of forming Ag alloy film

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Sanda, Japan

Yuto Toshimori