Nissan Chemical Corporation

Nissan Chemical Industries Limited

Yuto Hashimoto

Takahiro Kishioka

Yasushi Sakaida

Hiroto Ogata

Rikimaru Sakamoto

Tokio Nishita

Hikaru Tokunaga

Tomoya Ohashi

Yuki Endo

Keisuke Hashimoto

Kenji Takase

Yuki Usui

Mamoru Tamura

A composition for protective film formation can form a flat film that satisfactorily functions as a mask (protection) against wet etchants during semiconductor substrate processing and has a low dry etching rate, the composition having satisfactory covering and recess-filling properties when applied to rugged substrates and having a small thickness difference after the recess filling. A protective film, a resist underlayer film, and a resist-pattern-coated substrate each produced using the composition; and a method for producing a semiconductor device. The composition, which is for forming films for protection against wet etchants for semiconductors, includes an organic solvent and a compound that has a molecular end having a structure including at least one pair of adjoining hydroxyl groups and has a molecular weight of 1,500 or less, wherein particles present therein have an average particle diameter, as determined by a dynamic light scattering method, of 3 nm or smaller.

Protective film-forming composition containing diol structure

A protective film-forming composition excelling in preservation stability and having a favorable masking (protection) function against wet etching solutions when processing a semiconductor substrate, a protective film manufactured by using the composition, a substrate with a resist pattern, and a method for manufacturing a semiconductor device. The protective film-forming composition provides protection against wet etching solutions for semiconductors and contains: a polymer having a unit structure represented by Formula (1-1): Ar represents a benzene ring, a naphthalene ring, or an anthracene ring; Rrepresents a hydroxy group, a mercapto group; n1 represents an integer from 0-3; n2 represents 1 or 2; Lrepresents a single bond or an alkylene group that has 1-10 carbons; E represents an epoxy group; when n2=1, Trepresents an alkylene group that has 1-10 carbons; and when n2=2, Trepresents a nitrogen atom or an amide bond.

Chemical-resistant protective film

A composition for forming a resist underlayer film that functions as an anti-reflective coating during exposure and can be embedded in a recess having a narrow space and a high aspect ratio, and has excellent resistance to an aqueous hydrogen peroxide solution. A resist underlayer film-forming composition containing a resin, a compound of the following Formula (1) or (1):  wherein X is carbonyl group or methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3&#x2264;1+m 10, and n is an integer of 2 to 5, and a solvent, wherein the compound of Formula (1) or (1) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin.

Resist underlayer film-forming composition

A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein Ris a Calkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.)

Protective film-forming composition

A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1):  (wherein Xis a substituent reacting with the crosslinker, Ris a direct bond or a Calkylene group, Xis a Calkyl group, Calkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1&#x2264;(b+c)&#x2264;5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Compositions for forming a protective film against basic aqueous hydrogen peroxide solution, and pattern formation method

A composition for forming protective film against aqueous hydrogen peroxide solution, composition including resin; compound of following Formula (1a), (1b), or (1c): (wherein X is carbonyl group or methylene group; 1 and m are each independently integer of 0-5 to satisfy relation: 3&#x2264;1+m&#x2264;10; n is integer of 2-5; u and v are each independently integer of 0-4 to satisfy relation: 3&#x2264;u+v&#x2264;8; R-Rare each independently hydrogen atom, hydroxy group, Chydrocarbon group, or Caryl group; when R-Rare each the Chydrocarbon group; and j and k are each independently 0 or 1); crosslinking agent and catalyst; and solvent, wherein amount of compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to amount of resin, and amount of crosslinking agent is 5%-40% by mass relative to amount of resin.

Composition for forming film protecting against aqueous hydrogen peroxide solution

An additive for a resist underlayer film-forming composition containing a copolymer having structural units of Formulae (1) to (4), and a resist underlayer film-forming composition containing the additive: (where each Ris independently a hydrogen atom or methyl group, Ar is arylene group, Pr is a protecting group or a hydrogen atom, X is a direct bond or a &#x2014;C(&#x2550;O)O&#x2014;R&#x2014; group, Rconstituting the &#x2014;C(&#x2550;O)O&#x2014;R&#x2014; group is a Calkylene group, the alkylene group is bonded to a sulfur atom, Ris a hydrogen atom, methyl group, methoxy group, or halogeno group, Ris a Calkyl group in which at least one hydrogen atom is substituted with a fluoro group, and Z is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, or norbornane skeleton).

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Toyama, Japan

Yuto Hashimoto