Rensselaer Polytechnic Institute

Yuting W Chen

Xi-Cheng Zhang

Pengyu Han

A terahertz (THz) anti-reflection device, for example, a broadband tunable THz anti-reflection device, includes a silicon substrate having a plurality of recesses, each of the plurality of recesses having a plurality of cavities of decreasing dimension. The cavities may be nested polygonal cavities, for example, having a square or rectangular cross section. The recesses having the cavities may be positioned at regular periods, for example, periods ranging from 10 &#x3bc;m to 20 &#x3bc;m. The devices may be fabricated by conventional lithographic methods. Also disclosed are methods for modifying terahertz radiation and methods for fabricating anti-reflection devices.

Terahertz radiation anti-reflection devices and methods for handling terahertz radiation

A broadband anti-reflection apparatus for use with terahertz radiation includes a layer having an outer surface comprising a plurality of pyramid structures having about a 30 &#x3bc;m to about a 110 &#x3bc;m period, and wherein reflectance of the terahertz radiation is reduced compared to a layer comprising a planar outer surface. Also disclosed is a method for modifying terahertz radiation which includes receiving terahertz radiation on a device having an anti-reflection layer having an outer surface comprising a plurality of pyramid structures having about a 30 &#x3bc;m to a 110 &#x3bc;m period, and modifying the terahertz radiation passing through the device or processing the terahertz radiation in the device.

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Hyde Park, NY, United States of America

Yuting W Chen