Taiwan Semiconductor Manufacturing Comp. Ltd.

Yuting Cheng

Sung-Li Wang

Shuen-Shin Liang

Po-Chin Chang

Lin-Yu Huang

Chia-Hung Chu

Pinyen Lin

Hsu-Kai Chang

Hung-Yi Huang

Kuan-Kan Hu

Tzu-Pei Chen

Chuan-Hui Shen

Tzu Pei Chen

Chia-Hao Chang

Cheng-Chi Chuang

Liang-Yin Chen

Shin-Yi Yang

Chia-Cheng Chen

Sheng-Tsung Wang

Chun-Hung Wu

Ken-Yu Chang

Wei-Yip Loh

Yan-Ming Tsai

Hong-Mao Lee

Chun-Hung Liao

Tsun-Jen Chan

Jhih-Rong Huang

Cheng-Wei Lian

Harry Chien

Min-Chiang Chuang

Szu-Hsian Lee

A semiconductor device includes a semiconductor structure, a conductive nitride feature, a third dielectric feature, and a conductive line feature. The semiconductor structure includes a substrate, two source/drain regions disposed in the substrate, a first dielectric feature disposed over the substrate, a gate structure disposed in the first dielectric feature and between the source/drain regions, a second dielectric feature disposed over the first dielectric feature, and a contact feature disposed in the second dielectric feature and being connected to at least one of the source/drain regions and the gate structure. The conductive nitride feature includes metal nitride or alloy nitride, is disposed in the second dielectric feature, and is connected to the contact feature. The third dielectric feature is disposed over the second dielectric feature. The conductive feature is disposed in the third dielectric feature and is connected to the conductive nitride feature opposite to the contact feature.

Semiconductor device including conductive nitride feature and method of making the semiconductor device

Provided are devices with conductive contacts and methods for forming such devices. A method includes forming a lower conductive contact in a dielectric material and over a structure, wherein the lower conductive contact has opposite sidewalls that extend to and terminate at a top surface. The method also includes separating an upper portion of each sidewall from the dielectric material and locating a barrier material between the upper portion of each sidewall and the dielectric material. Further, the method includes forming an upper conductive contact over the lower conductive contact.

Conductive structure interconnects with downward projections

A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.

Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device

The present disclosure describes a semiconductor device with a nitrided capping layer and methods for forming the same. One method includes forming a first conductive structure in a first dielectric layer on a substrate, depositing a second dielectric layer on the first conductive structure and the first dielectric layer, and forming an opening in the second dielectric layer to expose the first conductive structure and a portion of the first dielectric layer. The method further includes forming a nitrided layer on a top portion of the first conductive structure, a top portion of the portion of the first dielectric layer, sidewalls of the opening, and a top portion of the second dielectric layer, and forming a second conductive structure in the opening, where the second conductive structure is in contact with the nitrided layer.

Semiconductor devices with a nitrided capping layer

Growing community of inventors

Hsinchu, Taiwan

Yuting Cheng