Adeka Corporation

Samsung Electronics Co., Ltd.

Fujikoki Corporation

Yutaro Aoki

Younjoung Cho

Takanori Koide

Seungmin Ryu

Gyuhee Park

Wakana Fuse

Soyoung Lee

Yusuke Takahashi

Akio Saito

Tsubasa Shiratori

Jaesoon Lim

Junya Hayakawa

Hiroyuki Uchiuzou

Kazuya Saito

Yoshiki Manabe

Younsoo Kim

Jaewoon Kim

Kazuki Harano

Jieun Yun

An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

Organometallic compound and method of manufacturing integrated circuit using the same

An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I):

Organometallic adduct compound and method of manufacturing integrated circuit using the same

Provided is a compound represented by the following general formula (1) or (2): where Rto Reach independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, Rand Reach independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, Mrepresents a gallium atom or an indium atom; where Rto Reach independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, Rrepresents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and Mrepresents a gallium atom or an indium atom.

Compound, thin-film forming raw material, and method of producing thin-film

Provided are a power element and an expansion valve using same that are capable of obtaining a desired temperature/flow rate characteristic while being low cost. A power element includes a diaphragm; an upper lid member that is joined to one side of an outer circumferential portion of the diaphragm and forms a pressure working chamber PO with the diaphragm; an annular support point adjustment member that is joined to another side of an outer circumferential portion of the diaphragm; a receiving member that is joined to the support point adjustment member and forms a refrigerant inflow chamber LS with the diaphragm, and a stopper member housed in the refrigerant inflow chamber LS, wherein the diaphragm is capable of coming into contact with a support point of the support point adjustment member.

Power element and expansion valve using same

Provided are a power element and an expansion valve using same that are capable of suppressing local deformation of a diaphragm or the like while ensuring the transfer efficiency of a refrigerant. A power element includes a diaphragm; an upper lid member that is overlapped on one surface in the vicinity of the outer circumference of the diaphragm and forms a pressure working chamber PO with the diaphragm; a receiving member that is overlapped on another surface in the vicinity of the outer circumference of the diaphragm and forms a refrigerant inflow chamber LS with the diaphragm; and a stopper member housed in the refrigerant inflow chamber LS and in contact with the diaphragm, wherein a plate thickness near a support point of the diaphragm is thicker than a plate thickness at a central portion of the diaphragm.

The present invention provides a tungsten compound represented by the following general formula (1): (in the formula, X represents a halogen atom, Rto Reach independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, Rrepresents a tertiary butyl group or a tertiary pentyl group, and Rrepresents an alkyl group having 1 to 5 carbon atoms. However, when Rto Rare all hydrogen atoms and Ris a tertiary butyl group, and when Rto Rare all methyl groups and Ris a tertiary butyl group, Rrepresents an alkyl group having 1 to 3 or 5 carbon atoms).

Tungsten compound, raw material for thin film formation and method for producing thin film

A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: 

Niobium compound and method of forming thin film

Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below.  In Formula 1, R, R, and Rindependently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; Rand Rindependently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of Rand Rare provided in two. Two Rs are independently of each other, and two Rs are independently of each other.

Growing community of inventors

Tokyo, Japan

Yutaro Aoki