Ngk Insulators, Inc.

Yutaka Unno

Yoshinobu Goto

Taiji Kiku

Reo Watanabe

Yasumitsu Tomita

Tomohiro Hara

Hisakazu Okajima

Shuichiro Motoyama

Nobuyuki Kondou

Hiroshi Takebayashi

Kazuhiro Nobori

Shinji Yamaguchi

Keiji Kawasaki

Tetsuhisa Abe

Daiki Maeda

Junya Waki

A ceramic heater includes a disc-shaped ceramic plate having a wafer placement surface, and a shaft provided on a surface on an opposite side of the wafer placement surface of the ceramic plate. First and second resistance heating elements are embedded inside the ceramic plate. When the ceramic plate is viewed from above, the gap (first gap) between first turn-back sections which face each other in a circumferential direction, and the gap (second gap) between second turn-back sections which face each other in a circumferential direction are arranged so as not to overlap.

Ceramic heater

A ceramic heater includes a disk-shaped ceramic plate having a wafer placement surface on a front surface thereof, the ceramic plate having a plasma electrode and a heater electrode embedded therein in this order, from closest to the wafer placement surface to farthest, in such a manner that the plasma electrode and the heater electrode are spaced apart from each other; a cylindrical shaft that supports the ceramic plate from a back surface of the ceramic plate; a plasma electrode connecting member arranged in the cylindrical shaft and connected to the plasma electrode; a heater electrode connecting member arranged in the cylindrical shaft and connected to the heater electrode; and a planar shield portion arranged on the back surface of the ceramic plate or embedded in the ceramic plate so as to be closer to the back surface than the heater electrode, the planar shield portion being connected to ground.

A wafer support table includes a ceramic base having a wafer placement surface and including an RF electrode and a heater electrode embedded, the RF electrode being closer to the wafer placement surface; a hole extending from a surface of the ceramic base opposite the wafer placement surface toward the RF electrode; and an RF rod through having a top end joined to the RF electrode or joined to a conductive member connected to the RF electrode, wherein the RF rod is a hybrid rod including a first rod member that is made of Ni and constitutes a portion of the RF rod from the top end to a predetermined position and a second rod member that is joined to the first rod member and constitutes a portion of the RF rod from the predetermined position to the base end and is made of a non-magnetic material.

Wafer support table and RF rod

A multi-zone heater includes an outer circumferential zone heater and first and second elemental wire portions. The outer circumferential zone heater is a coil that is provided in an outer circumferential zone of a ceramic substrate in the same plane as a plane in which a central zone heater is provided and that is routed throughout the outer circumferential zone in a unicursal manner from one end portion to the other end portion in the outer circumferential portion. The first elemental wire portion extends from a first terminal, passes through a central portion, is connected to the one end portion of the outer circumferential zone heater, and has a meandering shape in plan view. The second elemental wire portion extends from a second terminal, passes through the central portion, is connected to the other end portion of the outer circumferential zone heater, and has a meandering shape in plan view.

Multi-zone heater

An electrostatic-chuck heater is of a Johnsen-Rahbek type and is used in a process of forming a conductive film on a wafer. The electrostatic-chuck heater includes a disc-shaped ceramic base including an electrostatic electrode and a heating resistor, and a hollow shaft attached to a side of the ceramic base that is opposite a side having a wafer-mounting surface. A through-hole extends in a peripheral wall of the hollow shaft from a lower end through to an area of the wafer-mounting surface that is on an inner side with respect to a circular groove. The through-hole allows gas to be supplied from the lower end of the hollow shaft into a below-wafer space enclosed by the wafer-mounting surface, an outermost projection group, and the wafer mounted on the wafer-mounting surface.

Electrostatic-chuck heater

An electrostatic-chuck heater is a Johnsen-Rahbek electrostatic-chuck heater and is used in a process of forming a conductive film on a wafer. The electrostatic-chuck heater includes a disc-shaped ceramic base including an electrostatic electrode and a heating resistor, and a hollow shaft attached to a side of the ceramic base that is opposite a wafer-mounting surface. A protruding ring is provided on the wafer-mounting surface and having an outside diameter smaller than a diameter of the wafer. A through-hole extends in a peripheral wall of the hollow shaft from a lower end through to an area of the wafer-mounting surface that is on an inner side with respect to the protruding ring. The through-hole allows gas to be supplied from the lower end of the hollow shaft into a below-wafer space enclosed by the wafer-mounting surface, the protruding ring, and the wafer mounted on the wafer-mounting surface.

A wafer placement table includes: a ceramic member having a wafer placement surface; a mesh electrode buried in the ceramic member; a conductive connection member in contact with the mesh electrode and exposed to outside from a surface of the ceramic member on the opposite side of the wafer placement surface; and an external current-carrying member joined to a surface of the connection member exposed to outside. The mesh electrode has a mesh opening in a region that faces the connection member, and the mesh opening is filled with a sintered conductor being a sintered body of a mixture containing a conductive powder and a ceramic raw material.

Wafer placement table and method for manufacturing the same

A ceramic heater includes a ceramic substrate including, on an upper surface, a wafer mount surface that receives a wafer, and a heater electrode embedded in an inside of the ceramic substrate. The ceramic substrate includes a core portion and a surface layer portion disposed on a surface of the core portion. The surface layer portion has volume resistivity higher than volume resistivity of the core portion. The core portion has thermal conductivity higher than thermal conductivity of the surface layer portion. The surface layer portion is disposed over an area of at least one of a side surface of the core portion and an upper surface of the core portion, the area being not covered with the wafer.

Wafer support table with ceramic substrate including core and surface layer

A ceramic heater includes a ceramic plate having a wafer mounting surface and having a resistive heating element embedded in the plate; and a ceramic tubular shaft having a tubular shape and bonded to a back surface of the plate. The plate has a circular recess with a bottom in the back surface thereof. The tubular shaft has a plate-side flange extending radially outward from an outer peripheral surface of a plate-side end portion. An entire end surface of the plate-side end portion of the tubular shaft is bonded to a bonding region of the back surface of the plate outside the circular recess. The opening diameter dof the plate-side end portion of the tubular shaft, the inner diameter dof the plate-side flange of the tubular shaft, and the diameter Dof the circular recess of the plate satisfy d&#x2265;d&#x2265;D

A ceramic heater includes a ceramic plate having a wafer placement surface on which a wafer is to be placed, and incorporating a resistance heating element therein, and a ceramic tubular shaft having one end joined to a rear surface of the plate. The tubular shaft has a vertical sectional shape including an S-like portion or a curved portion having an inflection point in at least one position, and includes a through-hole penetrating the tubular shaft from the one end to the other end with an axis extending along the vertical sectional shape of the tubular shaft.

Ceramic heater and manufacturing method for tubular shaft

An electrostatic chuck has a structure in which an electrostatic electrode is embedded in a disk-like ceramic plate and attracts a wafer that is placed on the ceramic plate and that has a diameter smaller than that of the ceramic plate by Johnsen-Rahbek force. The electrostatic chuck includes an insulating film that has an electric resistance larger than that of the ceramic plate in an annular region of a front surface of the ceramic plate from an outer circumferential edge of the ceramic plate to the inside of an outer circumferential edge of the wafer that is placed on the ceramic plate.

Electrostatic chuck having an annular outer region covered by an insulating film

A wafer support of the present invention includes shield sheet embedded in the ceramic base between the plasma generation electrode and the heater electrode in a state not contacting both the electrodes; and a shield pipe electrically connected to the shield sheet and laid to extend to outside of the ceramic base from the surface of the ceramic base on the side opposite to the wafer placement surface, wherein the wiring member for the plasma generation electrode is inserted through inside of the shield pipe in a state not contacting the shield pipe, and the wiring member for the heater electrode is disposed outside the shield pipe in a state not contacting the shield pipe.

Wafer support

A ceramic heater includes a disk-shaped ceramic plate with an upper surface defining a wafer placement surface on which a wafer is to be placed. One or more inner-peripheral-side heater elements are embedded in an inner peripheral zone of the ceramic plate, and one or more outer-peripheral-side heater elements are embedded in an outer peripheral zone of the ceramic plate. A thickness of the ceramic plate in a predetermined zone is 3.9% or less of a diameter of the ceramic plate. The predetermined zone is a zone including a boundary line between the inner peripheral zone and the outer peripheral zone.

A high-frequency power supply includes a shaft bonded to one surface of a plate serving as a gas distributor plate. The plate includes a radio-frequency electrode buried therein. The shaft has a through-hole through which a gas flows. The plate and the shaft are made of a ceramic material. The shaft has a double-tube structure including the inner tube and the outer tube . The interior space of the inner tube forms the through-hole. The plate is hermetically solid-state bonded to the inner tube and the outer tube. The shaft is bonded to the center of the plate.

Member for semiconductor manufacturing apparatus and method for manufacturing the same

A heating deviceincludes a ceramic basea resistance heating elementand a hollow shaftThe ceramic baseincludes a central portionand a peripheral portionThe resistance heating elementis designed in such a manner that the density of heating in the central portionis 1.4 to 2.0 times that in the peripheral portionThe hollow shaftincludes a first sectionand a second sectionThe thickness tbof the first sectionis 6 to 10 mm. The thickness tbof the second sectionis 0.3 to 0.5 times the thickness tbof the first sectionThe length of the first section 41 is 0.4 to 0/8 times the overall length of the hollow shaft 40.

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Handa, Japan

Yutaka Unno