Kabushiki Kaisha Toshiba

Agency of Industrial Science and Technology

Ministry of International Trade & Industry

Yutaka Uchida

Naohiko Shimura

Shigeyuki Takagi

Takeshi Imamura

Haruo Okano

Osamu Yamazaki

Hisataka Hayashi

Takayuki Sakai

Kunihiko Wada

Hisashi Matsuda

Motofumi Tanaka

Hiroyuki Yasui

Masahiro Asayama

Toshiki Osako

Masashi Yamage

Shohei Goshima

Noboru Segawa

Tamon Ozaki

Hajime Shibata

Naoki Tajima

Kawakatsu Yamada

Yunosuke Makita

Kaoru Taki

Noboru Okamoto

Saburoh Satoh

An airflow control devicein an embodiment includes: a vortex shedding structure portiondischarging an airflow flowing on a surface in a flow direction as a vortex flow; and a first electrodeand a second electrodedisposed on a downstream side of the vortex shedding structure portionvia a dielectric. By applying a voltage between the first electrodeand the second electrode, flow of the airflow on the downstream side of the vortex shedding structure portionis controlled.

Airflow control device and airflow control method

A photocatalysis apparatus has at least one unit structure (). The unit structure has a photocatalyst module () and a pair of discharge electrodes () sandwiching the photocatalyst module. The photocatalyst module includes a photocatalyst and a three-dimensional ceramic mesh base carrying the photocatalyst. At least one of the discharge electrodes is a three-dimensional discharge electrode having an electrode body () and a conductive frame (). The electrode body consists of cells made of a conductive foil and has front, back, and side faces. The front and back faces are separated from each other by a predetermined distance and have a shape selected from a group including a honeycomb, a lattice, and a mesh. The side faces of the electrode body is covered with the conductive frame.

Discharge electrode and photocatalysis apparatus

A plasma processing apparatus according to the present invention includes a microwave guide for introducing a microwave, an air-tight chamber for internally setting an object to be processed, for generating a plasma by introducing the microwave introduced by the microwave guide and by supplying a reaction gas, and for processing the object by an active species generated by the plasma, a dielectric window provided between the microwave guide and the air-tight chamber, for enclosing the air-tight chamber, a top plate provided with a microwave guide port arranged with a gap maintained from the dielectric window, and cooling means provided for the top plate, for cooling heat caused by generation of the plasma, e.g., a cooling means for causing a cooling gas to flow in the gap between the dielectric window and the top plate.

Plasma processing apparatus and a plasma processing method

Etching selectivity is improved in a semiconductor process using a fluorocarbon gas. An energy incident to a substrate is controlled to have a value to cause transition from etching to deposition on a silicon nitride film, ions having (CF.sub.2).sub.n.sup.+ as a major component are guided onto the substrate to perform selective etching of a silicon oxide film against the silicon nitride film.

Surface treatment method and surface treatment apparatus

A laser-beam annealing apparatus that provides reliable, continuous control of the intensity of the laser beam used to perform the annealing process.

Laser-beam annealing apparatus

Growing community of inventors

Kamakura, Japan

Yutaka Uchida