Fuji Electric Co., Ltd.

Yutaka Terao

Makoto Utsumi

Yuko Nakamata

Yotaro Shiraishi

Takayuki Hirose

Aki Takigawa

Etsuko Tomita

A method of evaluating an insulated-gate semiconductor device having an insulated-gate structure including a channel formation layer made of a wide-bandgap semiconductor and a gate insulating film formed contacting the channel formation layer includes removing the gate insulating film in order to expose a surface of the channel formation layer; taking a phase image of the exposed surface of the channel formation layer using a phase mode of an atomic force microscope; evaluating a surface condition of the exposed surface of the channel formation layer by calculating an evaluation metric from phase shift values in the phase image and by determining whether the evaluation metric satisfies a prescribed condition; and determining that the insulated-gate semiconductor device is acceptable when the evaluation metric satisfied the prescribed condition.

Method of evaluating insulated-gate semiconductor device

The organic thin-film light-emitting device includes a substrate, a plurality of first electrodes arranged parallel on the substrate, an electroluminescent layer made of an organic material and formed on the first electrodes, a plurality of second electrodes formed on the electroluminescent layer, and an electrically insulating barrier wall. The barrier wall includes barrier wall lines disposed at gaps in an electrode pattern of the second electrodes, and barrier wall end lines connected to the barrier wall lines so that the barrier wall lines do not have ant free ends. Thus, peeling-off of the barrier wall lines as a shadow mask at their end is prevented.

Organic thin-film light-emitting device

A thin-film laminate type conductor is provided which includes a first conductor that is a metal thin film formed of Al or Al alloy, and a second conductor that is a transparent conductive thin film formed of a metal oxide. The first and second conductors are formed in respective patterns on a transparent substrate, such that at least a part of the second conductor is laminated on at least a part of the first conductor. The transparent conductive thin film is composed of an amorphous film. In another embodiment, the first conductor is composed of laminated metal thin films one of which is formed of Al or Al alloy, and the other of which is formed of a high-melting-point metal. The Al or Al-alloy film is sandwiched between the substrate and the high-melting-point metal film.

Thin-film laminate type conductor

An organic light-emitting device is formed of a transparent substrate, anodes in a stripe pattern formed on the transparent substrate, an organic film layer formed on the anodes, and cathodes formed on the organic film layer. Each of the anode includes a first conductor formed of a transparent and electrically conductive film containing a metal oxide as a main component, and a second conductor extending along the first conductor. The second conductor is formed of metal with a resistivity of 1/10 or less than a resistivity of a constituent material of the first conductor. Thus, the organic light-emitting device emits light efficiently with a low power consumption.

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Tokyo, Japan

Yutaka Terao