Sony Corporation

Canon Kabushiki Kaisha

Hitachi Software Engineering Company, Ltd.

Kabushiki Kaisha Toshiba

Nippon Hoso' Kyokai

Nitto Kohki Co., Ltd.

Mitsubishi Heavy Industries Limited

Hitachi, Ltd.

Nec Corporation

Kabush″ei Kaishr Toshiba

Toy Town Kogyo Co., Ltd.

Yutaka Tanaka

Naruto Takasaki

Takashi Okada

Taiji Nishizawa

Shinichi Hara

Takayuki Hasegawa

Taiichiro Kurita

Shin Matsui

Nobutoshi Mizusawa

Shigeru Terashima

Osamu Matsunaga

Yuji Chiba

Hiroshi Sahara

Toshinobu Isobe

Minoru Honda

Shunichi Uzawa

Yasunari Ikeda

Takao Kariya

Yuichi Ninomiya

Yoshimichi Ohtsuka

Hidehiko Fujioka

Kazuhiko Shibuya

Kazumasa Enami

Toshiro Ohmura

Ryoichi Yajima

Haruo Okuda

Ryuichi Ebinuma

Toshinobu Tokita

Isamu Shimoda

Mitsuaki Amemiya

Hiroshi Kurosawa

Takashi Nakahara

Kazunori Iwamoto

Shoichi Suzuki

Shigeyuki Hayakawa

Osamu Asano

Kaoru Watanabe

Yoshinori Izumi

Mitsuji Marumo

Seiichi Gohshi

Hideyuki Sakata

Osahiko Miyazaki

Shigeto Hirai

Junji Kumada

Tsuyoshi Midorikawa

Toshiyuki Takegahara

Isao Kondo

Yasuaki Kanatsugu

Youichi Satou

Makoto Okui

Takafumi Ogino

Akihiro Toda

Shinsuke Takase

Hideki Suganami

Taiki Asahara

Tetsuya Asami

Hisakazu Kato

Masamichi Iino

Akira Kirita

Noriaki Okumiya

Takehiro Hashimoto

Takanori Okazaki

Toshihiro Sato

Hiroshi Nakano

Hiroyuki Kobayashi

Atsushi Kimura

Kunitaka Ozawa

Takao Mogi

Kazuyuki Kasumi

Masamitsu Takahashi

Nobuyuki Asakura

Tetsuzo Mori

Kenji Fukuda

Toshiyuki Kouchi

Yoshio Takeuchi

Noboru Saito

Hirosato Takeuchi

Tadao Fujita

Koji Uda

Muneaki Maeno

Kenji Takanashi

Naoyuki Kotake

Toshiki Morimoto

Yukinori Uchino

Masaru Kanazawa

Toshio Osada

Kenji Mizuno

Yukihiro Nishida

Ken Matsuda

Shigeo Fujishiro

Masashi Onosato

Shunji Umemura

Shigehiro Kono

Toshiaki Douzaka

Seiji Watanabe

Yuichi Iwadate

Haruo Kubo

Seiji Kurauchi

Masanori Haraguchi

Satoru Koizumi

A flow damper including a cylindrical vortex chamber, a small flow-rate pipe connected to a peripheral plate of the vortex chamber along a tangential direction, a large flow-rate pipe connected to the peripheral plate with a predetermined angle with respect to the small flow-rate pipe, an outlet pipe connected to an outlet formed in a central part of the vortex chamber, and a pressure equalization pipe with respective ends being connected to the peripheral plate on opposite sides of the outlet and at positions closer to a connection portion between the small flow-rate pipe and the large flow-rate pipe than positions facing each other, putting the outlet therebetween. The pressure equalization pipe is arranged with at least a part thereof is located at a higher position than a top plate of the vortex chamber, and an outgassing hole is provided at an uppermost part of the pressure equalization pipe.

Flow damper, pressure-accumulation and water-injection apparatus, and nuclear installation

To include a cylindrical vortex chamber, a small flow-rate pipeconnected to a peripheral plateC of the vortex chamberalong a tangential direction thereof, a large flow-rate pipeconnected to the peripheral plateC with a predetermined angle with respect to the small flow-rate pipe, an outlet pipe connected to an outletformed in a central part of the vortex chamber, and a straightening platethat is arranged in a part between the outletand the peripheral plateC of the vortex chamber, and when jets flow into the vortex chamberfrom the small flow-rate pipeand the large flow-rate pipe, straightens impinging jets from the small flow-rate pipeand from the large flow-rate pipehaving flowed into the vortex chambertoward the outlet

A storage apparatus includes: a plurality of microprocessors; a plurality of storage areas formed into a drive group constituted from a plurality of physical drives; and a control unit for managing one of the microprocessors, which takes charge of data input to and output from one or more storage areas of the plurality of storage areas, as a microprocessor having ownership of the one or more storage areas; wherein the microprocessor executes dump processing for having an external physical drive store data of the one or more storage areas, for which the microprocessor takes charge of the data input and output, in response to a received I/O request; and wherein the control unit transfers the ownership of the microprocessor according to processing load bias of the dump processing which the plurality of microprocessors take charge of.

Storage apparatus and data management method

A semiconductor memory device includes first and second driving transistors; first and second load transistors; and first and second transmission transistors. Their respective drain diffusion layers of the transistors are isolated from one another. The semiconductor memory device also includes a bit cell in which the first and second driving transistors, the first and second load transistors, and the first and second transmission transistors are arranged; a first wiring for connecting their respective drains of the first driving transistor, the first load transistor, and the first transmission transistor; and a second wiring for connecting their respective drains of the second driving transistor, the second load transistor, and the second transmission transistor.

Semiconductor memory device

A processing apparatus includes a sealed vacuum chamber which contains a processing portion; a pressure controlling system which keeps the internal pressure of the sealed vacuum chamber constant at a predetermined level by exhausting the ambient gas in the sealed vacuum chamber; and an ambient gas recirculating system which recirculates the ambient gas exhausted from the sealed vacuum chamber back into the sealed vacuum chamber; wherein the ambient as recirculated by the ambient gas recirculating system is blown into the sealed vacuum chamber so that a gas flow is generated in a predetermined direction along the processing portion.

Exposure apparatus with tanks storing helium gas and method of manufacturing device using exposure apparatus

A fuse-data reading circuit is provided in a semiconductor integrated circuit device. In the fused-data reading circuit, a differential latch circuit compares a current depending on the resistance across a first fuse element, i.e., target element, with a current depending on the resistance of a series circuit including a second fuse element used as a reference fuse element and a resistor element. The differential latch circuit determines whether the first fuse element has been cut or not.

Fuse-data reading circuit

Processing apparatus, measuring apparatus, and device manufacturing method

A semiconductor integrated circuit device includes normal bit cells, structural dummy bit cells and timing dummy bit cells having the same structure as that of the normal bit cells, normal word lines electrically connected to the normal bit cells, a first dummy word line electrically coupled to the structural dummy bit cells, and a second dummy word line electrically coupled to the timing dummy bit cells. The second dummy word line is connected in parallel with the first dummy word line.

Semiconductor integrated circuit device

An electronic apparatus includes a first panel section having a control surface or a display surface, and a panel assembly constructed by detachably mounting the first panel section on a second panel section. A driving mechanism is provided so as to change the attitude of the second panel section. In the detachment position of the first panel section, the attitude of the second panel section is determined so that the second panel section tilts toward the front of the apparatus.

Electronic device having panel body

A processing system is disclosed which includes first and second chambers, each for accommodating a processing apparatus therein, each chamber being able to be kept gas tight, a coupling member for coupling the processing apparatuses accommodated in the first and second chambers with each other, and an elastic gas tightness holding member for gas tightly sealing portions between the coupling member and the first and second chambers.

Processing system and device manufacturing method using the same

A substrate processing system has a first processing device which processes a substrate with a first process in a first gas atmosphere within a process chamber and a transfer device that transfers a substrate in a second gas atmosphere within a clean booth, the transfer device transferring a substrate which has been processed with a second process by a second processing device or a substrate which is to be processed by that second processing device. A load-lock chamber has a substrate transfer path between the first processing device and the transfer device and there is a gas supply device which supplies the first gas from the process chamber to the load-lock chamber when the substrate is transferred between the load-lock chamber and a first processing device, and supplies the second gas from the clean booth to the load-lock chamber when the substrate is transferred between the load-lock chamber and the transfer device.

Processing apparatus for processing sample in predetermined atmosphere

An exposure apparatus includes a chamber which incorporates an optical element and surrounds a predetermined region, a mechanism for setting an inert gas atmosphere in the chamber, and a closed vessel which surrounds the chamber. The purity of inert gas in the chamber is higher than a purity of inert gas in the closed vessel.

Exposure apparatus, gas replacement method, semiconductor device manufacturing method, semiconductor manufacturing factory and exposure apparatus maintenance method

Disclosed is a method of monitoring the neutron sensitivity of a neutron detector. Voltage having a predetermined potential difference is applied between an anode and a cathode without irradiating the neutron detector with neutrons to permit an &agr;-ray to be emitted from the nuclear fission substance. The &agr;-ray ionizes the ionizing gas to form an &agr;-ray current (I&agr;) flowing between the anode and the cathode. The current (I&agr;) thus formed is monitored. Also, with the monitoring region in which the applied voltage and the &agr;-ray current (I&agr;) bear a substantially proportional relationship, obtained is an extrapolated zero-volt &agr;-ray current (I&agr; ) at 0V of the applied voltage between the anode and the cathode from the proportional relationship by an extrapolating method, and the extrapolated zero-volt &agr;-ray current (I&agr; ) is correlated with the neutron sensitivity.

Method of monitoring neutron sensitivity of neutron detector

A processing apparatus includes a sealed vacuum chamber which contains a processing portion; a pressure controlling system which keeps the internal pressure of the sealed vacuum chamber constant at a predetermined level by exhausting the ambient gas in the sealed vacuum chamber; and an ambient gas recirculating system which recirculates the ambient gas exhausted from the sealed vacuum chamber back into the sealed vacuum chamber; wherein the ambient gas recirculated by the ambient gas recirculating system is blown into the sealed vacuum chamber so that a gas flow is generated in a predetermined direction along the processing portion.

Processing apparatus with pressure control and gas recirculation system

An exposure apparatus includes a gap measuring device for measuring a gap between a mask, having a mask membrane, and a substrate, a gap adjuster for adjusting the gap between the mask and the substrate and a driver for relatively moving the mask and the substrate relative to each other. The gap adjusting device adjusts the gap when the mask and the substrate are placed at a position at which they are opposed to each other in an area smaller than a predetermined area.

Gap adjusting method in exposure apparatus

Growing community of inventors

Yokohama, Japan

Yutaka Tanaka