Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Yutaka Takeda

Satoshi Nakamura

Naoki Chinone

Shinji Tsuji

Takao Mori

Michiharu Nakamura

Kunio Aiki

Daisuke Makino

Asao Isobe

Shigeru Koibuchi

Kazuhiro Kurata

Motohisa Hirao

Ryoichi Ito

Hisao Nakashima

Atsutoshi Doi

A developing solution comprising at least two compounds selected from choline and quaternary ammonium salts is suitable for developing a negative-type photosensitive resin composition with exposure to a smaller light amount.

Process for producing a pattern with negative-type photosensitive

Disclosed herein is a semiconductor laser device including at least an active region consisting of a semiconductor material and a semiconductor region consisting of a material having a different composition from that of the active region and confining the active region, wherein at least one p-n junction is formed inside the confining region in parallel to the active region and a current flowing through the active region at a field strength below an electric field causing degradation of the semiconductor laser device is allowed to flow through regions other than the active region via the p-n junction by controlling the impurity concentration of the region having the p-n junction. The semiconductor laser device does not undergo catastrophic degradation even when applied with a current higher than a rated value.

Semiconductor laser device including an arrangement for preventing laser

A light-emitting semiconductor device is provided having a light-emitting semiconductor element emitting light in two directions. The light-emitting element is disposed in a housing so that one light-emitting face of the semiconductor element adjacent a heat sink, and a light guide is arranged to confront the other light-emitting face of the semiconductor element and to guide light from said other light-emitting face to the outside of the housing. In this device, the end face of the light guide confronting said other light-emitting face of the semiconductor element includes a face substantially inclined to the optical axis of light emitted from the semiconductor element.

Light-emitting semiconductor device

A semiconductor layer for supporting a diode chip of a semiconductor laser is formed to be higher than a semiconductor layer containing a current-conducting region, whereby stresses acting on the diode chip by mounting the diode chip are relieved to prevent degradation of performance and reduced life of the semiconductor laser.

Semiconductor laser

Growing community of inventors

Ohme, Japan

Yutaka Takeda