Sharp Kabushiki Kaisha Corporation

Yutaka Takamaru

Seiji Kaneko

Seiichi Uchida

Yasuyuki Ogawa

Shigeyasu Mori

Yohsuke Kanzaki

Kohhei Tanaka

Takao Saitoh

Tadayoshi Miyamoto

Kaoru Yamamoto

Kazuatsu Ito

Keisuke Ide

Mitsunobu Miyamoto

Makoto Nakazawa

Hiroshi Matsukizono

Takuya Matsuo

Hiroyuki Ogawa

Mitsuhiro Murata

Yasuhiro Sugita

Kazutoshi Kida

Shinji Yamagishi

Yuhji Yashiro

Ken Kuboki

Akira Shibazaki

Noriaki Yamaguchi

An imaging panel having a plurality of pixels, for picking up scintillation light obtained by converting X-ray projected from an X-ray source, with use of a scintillator, includes photodiodes, TFTs, and an organic film. The photodiodes are provided at the pixels, respectively, for receiving the scintillation light and converting the same into charges. The TFTs are provided at the pixels, respectively, for reading the charges obtained through the conversion by the photodiodes. In one pixel area of the pixels, an area where the organic film is not provided exists in a layer at an upper position with respect to the TFTs, other than an area where a contact hole CHfor connecting the photodiode and the drain electrode is provided.

Imaging panel and X-ray imaging device including same

One of the upper surface and the lower surface of a semiconductor layer () of a thin-film transistor () in a semiconductor device () is in contact with a gate insulating layer (), and the other is in contact with a first insulating layer () containing silicon oxide. The semiconductor layer () includes a first and second oxide semiconductor layers (A,B). The first oxide semiconductor layer (A) is arranged on a gate insulating layer side of the second oxide semiconductor layer (B) and is in contact with the second oxide semiconductor layer. The second oxide semiconductor layer (B) contains In and Ga and does not contain Sn. The first oxide semiconductor layer (A) contains In, Sn, and Zn. The percentage of Zn in the first oxide semiconductor layer (A) in the depth direction does not have a maximum value in the vicinity of a surface of the first oxide semiconductor layer adjacent to the second oxide semiconductor layer. The percentage of Sn having a metallic bonding state at the interface between the first oxide semiconductor layer and the second oxide semiconductor layer is 90% or less with respect to the total amount of Sn. A region where the percentage is 50% or more has a thickness of less than 10 nm.

Semiconductor device and method for producing the same

A semiconductor device includes, a plurality of oxide semiconductor TFTs including a first gate electrode, a first insulating layer in contact with the first gate electrode, an oxide semiconductor layer opposing the first gate electrode via the first insulating layer, a source electrode and a drain electrode which are connected with the oxide semiconductor layer, and an organic insulating layer covering only some of the plurality of oxide semiconductor TFTs, wherein the plurality of oxide semiconductor TFTs include a first TFT which is covered with the organic insulating layer and a second TFT which is not covered with the organic insulating layer, and the second TFT includes a second gate electrode opposing the oxide semiconductor layer via a second insulating layer, the second gate electrode being arranged to overlap with at least a portion of the first gate electrode with the oxide semiconductor layer interposed therebetween.

Semiconductor device including a plurality of thin-film transistors with one thin-film transistor including two gate electrodes

In a semiconductor device including a semiconductor layer made of an oxide semiconductor, occurrence of variance in the characteristics of TFTs is suppressed. In a manufacturing process of a semiconductor device () where a passivation film () is to be formed at an upper layer of a semiconductor layer () made of an oxide semiconductor, deposition conditions of the passivation film () are set such that the proportion of pure metal (the ratio of pure metal to all the components of the semiconductor layer ()) at an interface of the semiconductor layer () to the passivation film () becomes higher than the proportion of pure metal in the bulk of the semiconductor layer ().

Method for manufacturing a semiconductor device where a plurality of layers including a semiconductor layer made of an oxide semiconductor are stacked to form a thin film transistor

A semiconductor device () includes a thin-film transistor () including a gate electrode (), an oxide semiconductor layer (), a gate insulating layer (), a source electrode (), and a drain electrode (); a metal oxide layer () including a conductor region () and formed from an oxide film from which the oxide semiconductor layer () is also formed; an interlayer insulating layer () covering the thin-film transistor and the metal oxide layer (); and a transparent conductive layer () disposed on the interlayer insulating layer and electrically connected to the drain electrode, wherein the oxide semiconductor layer () and the metal oxide layer () contain indium, tin, and zinc, and the transparent conductive layer () overlaps at least a portion of the conductor region () with the interlayer insulating layer () therebetween.

Semiconductor device and method for manufacturing same

A semiconductor device (A) includes a substrate (); a TFT (A) supported on the substrate, the TFT including an oxide semiconductor layer (); an organic insulating layer () covering the TFT; a lower layer electrode () on the organic insulating layer; a dielectric layer () on the lower layer electrode; an upper layer electrode on the dielectric layer; and an upper layer electrode () including a portion opposing the lower layer electrode via the dielectric layer. The dielectric layer is a silicon nitride film having a hydrogen content of 5.33&#xd7;10atoms/cmor less.

Semiconductor device including a silicon nitride dielectric layer and method for producing same

A semiconductor device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; an oxide semiconductor film including a channel region disposed over the gate electrode through the gate insulating layer and lowered-resistance region contacting the channel region; a source electrode and a drain electrode on the channel region; a first insulating film covering at least the channel region and including a contact hole that exposes the lowered-resistance region; and a second insulating film having reducing characteristics and disposed above the first insulating film across the contact hole, the second insulating film contacting the lowered-resistance region inside the contact hole.

Semiconductor device and liquid crystal display device

A TFT substrate (A) of a liquid crystal display panel includes: an organic interlayer insulating layer () covering a TFT; a first transparent electrically-conductive layer () provided in the first region of a surface of the organic interlayer insulating layer (); and an inorganic dielectric layer () covering the first transparent electrically-conductive layer () and provided in a second region of the surface of the organic interlayer insulating layer () which is different from the first region, the inorganic dielectric layer () containing SiN, wherein an arithmetic mean roughness Ra of the first region and the second region of the surface of the organic interlayer insulating layer () is not less than 3.45 nm and not more than 5.20 nm.

Liquid crystal display panel and method for producing same

The EL substrate includes semiconductor layers of TFTs, a pixel electrode, and an upper part electrode of a Cs section which are provided on a gate insulating film. The semiconductor layers are covered with a protective film which has openings via which the pixel electrode and the upper part electrode are exposed. The semiconductor layers are an oxide semiconductor layer, and the pixel electrode and the upper part electrode are reduction electrodes of the oxide semiconductor layer.

Electroluminescent substrate, method for producing same, electroluminescent display panel, and electroluminescent display device

At the time of partial drive, the levels of voltages applied to data lines SL1 to SLn are switched according to a rewrite frequency set for each region of a display screen. For example, in a still-image display region with a relatively low rewrite frequency, the levels of the voltages applied to the data lines SL1 to SLn are set to be higher than those for a moving-image display region with a relatively high rewrite frequency. By this, the same effect as that obtained when a counter voltage is switched according to the rewrite frequency can be obtained. Thus, flicker occurring in each region of the display screen can be suppressed.

Liquid crystal display device and method for driving the same

In a display control circuit () of a display device, an image pattern detection portion () detects whether an image is an anti-flicker pattern or not, and when it is an anti-flicker pattern, a backlight source is driven (typically, such that its luminance changes in the opposite phase relative to luminance changes that would occur), on the basis of predicted values, which are predetermined so as to compensate for the luminance changes that would occur. Moreover, the backlight is not turned on during the scanning period. As a result, flicker due to current leakage, etc., can be reduced or eliminated in a display device for which a scanning period and a scan stop period are set.

Display device with compensating backlight drive circuit and method for driving same

This semiconductor device (A) includes: a substrate (); a gate electrode () formed on the substrate (); a gate insulating layer () formed over the gate electrode (); an oxide semiconductor layer () formed on the gate insulating layer (); source and drain electrodes () electrically connected to the oxide semiconductor layer (); a first transparent electrode () electrically connected to the drain electrode (); an interlayer insulating layer () including portions formed on the source and drain electrodes (); and a second transparent electrode () formed on the interlayer insulating layer (). At least a portion of the second transparent electrode () overlaps with the first transparent electrode () with the interlayer insulating layer () interposed between them. And the oxide semiconductor layer () and the first transparent electrode () are formed out of a same oxide film.

Semiconductor device and method for producing same

This semiconductor device (A) includes: an oxide layer () which includes a semiconductor region () and a conductor region () that contacts with the semiconductor region; a source electrode () and a drain electrode () which are electrically connected to the semiconductor region; an insulating layer () formed on the source and drain electrodes; a transparent electrode () arranged to overlap at least partially with the conductor region with the insulating layer interposed between them; a source line () formed out of the same conductive film as the source electrode; and a gate extended line () formed out of the same conductive film as a gate electrode (). The source line is electrically connected to the gate extended line via a transparent connecting layer () which is formed out of the same conductive film as the transparent electrode.

Semiconductor device and method of manufacture thereof

The TFT substrate () of this liquid crystal display device () includes: a TFT () which is provided for each pixel; an upper electrode () which is electrically connected to the TFT's drain electrode (); a lower electrode () which is arranged under the upper electrode; and a dielectric layer () which is arranged between the upper and lower electrodes. Its counter substrate () includes a counter electrode () which faces the upper electrode. The upper electrode has first and second regions (R, R) which have mutually different electrode structures, and a third region (R) which electrically connects the first and second regions to the drain electrode. The third region of the upper electrode includes a symmetrical connecting portion () that is a conductive film pattern, of which the shape is substantially symmetrical with respect to a virtual line (L) that splits each pixel into two adjacent regions in a row direction.

Liquid-crystal display apparatus with large viewing angle and high optical transmittance

Provided is a liquid crystal display device with reduced power consumption employing a CS drive method. A CS driver () consists of a CS shift register () and a CS output portion (). The CS shift register () outputs control signals (COUT() to COUT(m)) in accordance with a CS clock signal CCK. The CS output portion () outputs auxiliary capacitance signals (CSS() to CSS(m)) in accordance with the control signals (COUT() to COUT(m)), respectively. An idle period (T) is set following a scanning period (T). During the idle period (T), the CS driver () is driven in accordance with the CS clock signal (CCK) at an idle-period CS frequency (fcck). The idle-period CS frequency (fcck) is lower than a scanning-period CS frequency (fcck).

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Osaka, Japan

Yutaka Takamaru