Olympus Optical Company, Ltd.

Tokyo Electron Limited

Ricoh Company, Ltd.

Fuji Photo Film Company, Limited

Nec Corporation

Nippon Shinyaku Company, Ltd.

Astellas Pharma Gmbh

International Business Machines Corporation

Tdk Corporation

Jeol Ltd.

Kirin Beer Kabushiki Kaisha

Subaru Corporation

Mitsui Petrochemical Industries, Ltd.

Tokyo Electron Limi Ted

Tokyo University of Science Foundation

Yutaka Takahashi

Hitoshi Kato

Masami Tomita

Toshio Koike

Naohiro Kumagai

Masanori Kawasumi

Shinichi Kato

Takeshi Uchitani

Takeshi Shintani

Koichi Sakata

Eisaku Murakami

Masahide Kanno

Hiroki Hibino

Yuji Arai

Minoru Masuda

Yoshio Hattori

Ken Amemiya

Hitoshi Iwatsuki

Katsuyuki Saito

Masahiko Sasaki

Kimitoshi Yamaguchi

Shin Hasegawa

Takatsugu Fujishiro

Hiroshi Ono

Junichi Matsumoto

Hiroyuki Nagashima

Kazuhide Hasebe

Kazuo Watanabe

Hiroshi Hosokawa

Atsushi Inoue

Hideo Yoshizawa

Satoshi Sakurai

Kiyonori Tsuda

Takeo Suda

Tadashi Kasai

Shinji Yamashita

Nobuo Takami

Takaaki Tawada

Satoshi Takagi

Mitsuo Aoki

Akira Suzuki

Hiroyuki Fukuda

Emi Kita

Koji Suzuki

Kazunari Nakamura

Yoshiyuki Kimura

Tomohiro Inoue

Akira Taniguchi

Hisashi Nakajima

Akinobu Uchikubo

Emiko Shiraishi

Tomohisa Sakurai

Hiroyuki Kishida

Masato Yanagida

Toshihiro Sugiyama

Shinichi Kawahara

Junji Yamabe

Yoshio Nakajima

Daisuke Murayama

Sakae Takehana

Katsutoshi Ishii

Jun Shiori

Tadashi Fukuzawa

Atsushi Sampe

Atsushi Endo

Shuji Tanaka

Takashi Tsukaya

Yoshinao Oaki

Koichi Matsui

Keiichi Yoshida

Masato Toda

Tatsuya Tomura

Yuki Oshikawa

Shinichiro Hattori

Hirofumi Yamamoto

Mugijiroh Uno

Masaaki Takimoto

Takehiro Nakagawa

Haruji Mizuishi

Hiroshi Fujiwara

Masao Uehara

Toyoaki Tano

Yasushi Koichi

Shigeru Sakamoto

Kohichi Utsunomiya

Masakazu Gotanda

Hisashi Habashi

Toshiaki Noguchi

Hiroshi Tohmatsu

Toshiaki Higaya

Katsunori Sakiyama

Yuichi Yamada

Saori Yamada

Mariko Takii

Kumi Hasegawa

Setsuo Soga

Takuya Fujita

Bing Shu

Victor Y Lee

Takuzi Yoneda

A pharmaceutical composition for modified release comprising (R)-2-(2-aminothiazol-4-yl)-4'-[2-[(2-hydroxy-2-phenylethyl)amino]ethyl]acetic acid anilide or a pharmaceutically acceptable salt thereof, and a carrier for a sustained release pharmaceutical composition, wherein a maximum blood drug concentration (Cmax) when administered in fasted state is 400 ng/ml or less, is disclosed.

Pharmaceutical composition for modified release

A pharmaceutical composition for modified release, comprising (1) (R)-2-(2-aminothiazol-4-yl)-4'-[2-[(2-hydroxy-2-phenylethyl) amino]ethyl] acetic acid anilide, or a pharmaceutically acceptable salt thereof, (2) at least one additive which ensures penetration of water into the pharmaceutical composition and which has a solubility such that the volume of water required for dissolving 1 g of the additive is 10 mL or less, and (3) a hydrogel-forming polymer having an average molecular weight of approximately 100,000 or more, or a viscosity of 12 mPa·s or more at a 5% aqueous solution at 25 C is disclosed.

A deposition method includes: forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount; causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma.

Deposition method

A pharmaceutical composition for modified release comprising (R)-2-(2-aminothiazol-4-yl)-4'-[2-[(2-hydroxy-2-phenylethyl)amino]ethyl]acetic acid anilide or a pharmaceutically acceptable salt thereof, and a carrier for a sustained release pharmaceutical composition, wherein a maximum blood drug concentration (Cmax) when administered in a fasted state is 400 ng/mL or less, is disclosed.

A film deposition method is provided. In the method, chlorine gas is activated in a plasma generator, and an adsorption inhibitor group is formed by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber. A source gas containing chlorine and one of silicon and a metal is adsorbed on a region without the adsorption inhibitor group of the surface of the substrate, and a nitride film is deposited by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas. The substrate on which the nitride film is deposited is carried out of the processing chamber, and an inside of the plasma generator is purged with activated oxygen gas.

Film deposition method

A deposition method includes forming a nitride film on a surface of a substrate; and performing, after the depositing, plasma purging supplying a noble gas activated as a plasma. The forming of the nitride film includes a) forming adsorption inhibitors on the surface of the substrate, by supplying a chlorine gas activated by a plasma and by causing the activated chlorine gas to be adsorbed on the surface of the substrate; b) causing a raw material gas, containing silicon and chlorine or a metal and chlorine, to be adsorbed on a region in the surface of the substrate on which the adsorption inhibitors are not present, by supplying the raw material gas on the surface of the substrate; and c) depositing the nitride film on the surface of the substrate, by supplying a nitriding gas to cause the raw material gas to be reacted with the nitriding gas.

A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate with a silicon nitride film. In the method, a first silicon nitride film is deposited in the recessed pattern formed in the surface of the substrate. The first silicon nitride film has a V-shaped cross section decreasing its film thickness upward from a bottom portion of the recessed pattern. A second silicon nitride film conformal to a surface shape of the first silicon nitride film is deposited.

Method for depositing a silicon nitride film and film deposition apparatus

A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, an adsorption blocking group is formed by adsorbing chlorine gas activated by plasma on a top surface of the substrate and an upper portion of the recessed pattern. A source gas that contains one of silicon and a metal, and chlorine, is adsorbed on a lower portion of the recessed pattern where the adsorption blocking group is not formed, by supplying the source gas to the surface of the substrate including the recessed pattern. A molecular layer of a nitride film produced by a reaction of the source gas and a nitriding gas is deposited on the lower portion of the trench by supplying the nitriding gas to the surface of the substrate including the recessed pattern.

Film deposition method and film deposition apparatus

A pharmaceutical composition for modified release, comprising (1) (R)-2-(2-aminothiazol-4-yl)-4'-[2-[(2-hydroxy-2-phenylethyl)amino]ethyl]acetic acid anilide, or a pharmaceutically acceptable salt thereof, (2) at least one additive which ensures penetration of water into the pharmaceutical composition and which has a solubility such that the volume of water required for dissolving 1 g of the additive is 10 mL or less, and (3) a hydrogel-forming polymer having an average molecular weight of approximately 100,000 or more, or a viscosity of 12 mPa&#xb7;s or more at a 5% aqueous solution at 25&#xb0; C. is disclosed.

A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.

An inkjet ink including: a stilbene-based compound represented by General Formula (1) below; where in the General Formula (1), Rand Reach independently represent, for example, an alkyl group includingtocarbon atoms, an alkenyl group includingtocarbon atoms, a phenyl group, or a naphthyl group.

Inkjet ink and coloring composition

A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate. In the method, a first adsorption blocking region is formed by adsorbing first chlorine radicals such that an amount of adsorption increases upward from a bottom portion of the recessed pattern. A source gas that contains silicon and chlorine adsorbs on an adsorption site where the first adsorption site is not formed. A molecular layer of a silicon nitride film is deposited so as to have a V-shaped cross section. A second adsorption blocking region is formed by adsorbing second chlorine radicals on the molecular layer of the silicon nitride film. The molecular layer of the silicon nitride film is modified by nitriding the molecular layer while removing the second adsorption blocking region.

A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses including a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate, a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site, and a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.

Film deposition method of depositing film and film deposition apparatus

A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.

Method for forming a protective film

A protective film forming method is provided. In the method, substantially an entire surface of a silicon-containing underfilm is terminated with fluorine by supplying a fluorine-containing gas to the silicon-containing underfilm formed on a substrate having a surface including a plurality of recesses and a flat surface provided between the adjacent recesses. A surface of the silicon-containing underfilm formed on the flat surface of the substrate is nitrided by supplying a nitriding gas converted to plasma to the silicon-containing underfilm terminated with fluorine such that a silicon adsorption site is formed on the surface of the silicon-containing underfilm formed on the flat surface of the substrate. A silicon-containing gas is adsorbed on the silicon adsorption site by supplying the silicon-containing gas to the silicon-containing underfilm.

Protective film forming method

Growing community of inventors

Tokyo, Japan

Yutaka Takahashi