Showa Denko K.k.

Yutaka Tajima

Kenji Momose

Daisuke Muto

Yoshiaki Kageshima

Akira Miyasaka

Yasuyuki Sakaguchi

Michiya Odawara

Yoshihiko Miyasaka

A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))&#xd7;90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))&#xd7;110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cmto 0.5 pieces/cm(where x indicates the off angle).

SiC epitaxial wafer and method for manufacturing the same

Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.

Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H&#x2014;SiC single-crystal substrate having an off-axis angle of 5&#xb0; or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400&#xb0; C. and 1600&#xb0; C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiHgas and CHgas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiHgas and the supply of CHgas are cut off simultaneously, the substrate temperature is maintained until the SiHgas and the CHgas are evacuated, and then the temperature is decreased.

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Chichibu, Japan

Yutaka Tajima