Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Yutaka Taguchi

Kazuo Eda

Keiji Onishi

Shun-ichi Seki

Hideki Iwaki

Tetsuyoshi Ogura

Shunichi Seki

Osamu Kawasaki

Tetsuyosi Ogura

Akihiro Kanaboshi

Hiroki Sato

Yoshihiro Bessho

Yasuhiro Sugaya

Toshiyuki Asahi

Yoshihiro Tomita

Akihiko Namba

Tousaku Nishiyama

Tsukasa Shiraishi

Tetsuji Miwa

Yosihiro Tomita

Katsuyuki Miyauchi

Yoshinobu Idogawa

Seiichi Nakatani

Toru Yamada

Osamu Shibata

Atsushi Shinkai

Masahide Tsukamoto

Yuki Satoh

Takeshi Shimamoto

Hiroshi Suenaga

Toshio Fujii

Masato Sugimoto

Yukihiro Fukumoto

Takaharu Yoshida

Kazufumi Yamaguchi

Yasunobu Tsuji

Chie Sasaki

Fumikazu Tateishii

A signal transmission device includes a differential driver, a first single-ended driver circuit block, a second single-ended driver circuit block, a control circuit, and a common-mode filter. In the case where two-channel single-ended transmission is performed by using the first and second single-ended driver circuit blocks, the control circuit controls a driving capability of the first single-ended driver circuit block and a driving capability of the second single-ended driver circuit block in accordance with a combination of a change in a logical value of an output signal of the first single-ended driver circuit block and a change in a logical value of an output signal of the second single-ended driver circuit block.

Signal transmission device, signal transmission system, signal transmission method, and computer device

At least four terminal electrodes are provided on a surface of multi-layer substrate main body. An electric functional layer is selectively provided at an internal area of said multi-layer substrate placed at a downward position of all terminal electrodes in a substrate thickness direction. A semiconductor device is flip-chip-bonded to the terminal electrodes. Thus, the semiconductor device is electrically connected to the electric functional layer at a short distance. As a result, a reduction in parasitic inductance and an improvement in high frequency characteristic can be accomplished. Generation of height variations between the terminal electrodes can be prevented, and the semiconductor device is stably flip-chip-bonded to the multi-layer substrate.

Semiconductor module

A module with a built-in circuit component of the present invention includes an electric insulating layer, a pair of wiring layers provided on both principal planes of the electric insulating layer, a plurality of via conductors electrically connecting the pair of wiring layers and passing through the electric insulating layer in a thickness direction thereof, and a circuit component buried in the electric insulating layer, wherein the plurality of via conductors are disposed in a circumferential portion of the electric insulating layer in accordance with a predetermined rule. The plurality of via conductors are placed at an interval, for example, so as to form at least one straight line, in a cut surface of the electric insulating layer in a direction parallel to a principal plane thereof.

Module with built-in circuit component and method for producing the same

A semiconductor built-in millimeter-wave band module includes: an insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a high thermal conductivity substrate made of a dielectric material having thermal conductivity higher than the insulating substrate and laminated on one surface of the insulating substrate; a plurality of wiring patterns formed on the high thermal conductivity substrate and the insulating substrate; a semiconductor device operating at millimeter-wave band, which is arranged inside of the insulating substrate, is packaged on the high thermal conductivity substrate in a face-up manner, and is connected electrically with the wiring patterns; and a distributed constant circuit element and an active element provided on the semiconductor device. In this module, a void is provided inside of the insulating substrate and in the vicinity of a surface of the distributed constant circuit element and the active element. With this configuration, heat from the semiconductor device operating at a millimeter-wave band can be dissipated effectively and the semiconductor and other circuit components can be packaged with high density.

Semiconductor built-in millimeter-wave band module

A high-frequency switch having two input terminals and two output terminals of which a broad pass band is required has (i) a circuit board that has two input electrodes along one side and two output electrodes along another side, and (ii) four PIN diodes mounted on this circuit board. Each side of the quadrangle made by connecting the input electrodes and the output electrodes is not parallel to the corresponding side of the quadrangle made by connecting electrodes for mounting the PIN diodes. Each side and the corresponding side form an angle other than 180&#xb0;. This structure can provide a high-frequency switch capable of reducing a transmission loss in the paths and facilitating impedance matching.

High-frequency switch

A light reception/emission device built-in module with optical and electrical wiring combined therein includes: an optical waveguide layer including a core portion and a cladding portion; first and second wiring patterns formed on a main surface of the optical waveguide layer; a light reception device disposed inside the optical waveguide layer, the light reception device being optically connected with the core portion of the optical waveguide layer and being electrically connected with the first wiring pattern; and a light emission device disposed inside the optical waveguide layer, the light emission device being optically connected with the core portion of the optical waveguide layer and being electrically connected with the second wiring pattern. With this configuration, optical coupling between the optical waveguide and the light reception/emission device can be conducted precisely.

Light-reception/emission device built-in module with optical and electrical wiring combined therein, method for producing the module and assembling member of the module

An insulator is provided between interconnect layers oppositely placed. The interconnect layers are connected between by connection members provided through the insulator. The connection members at one and the other ends are connected between in their center positions. A shield layer is provided spaced from the intermediate connection layer generally on a same plane as the intermediate connection layer. A condition of (R&#xb7;r)/(2&#xb7;h)&#x2266;L&#x2266;(5&#xb7;R&#xb7;r)/h is satisfied, provided that a connection distance between the interconnect layers through the connection members and the intermediate connection layer is h, the connection members where considered generally as a circular cylinder have a diameter R, the intermediate connection layer where considered generally as circular has a diameter r, and a spaced distance between the intermediate connection layer and the shield layer is L. Thus, characteristic impedance is stabilized.

Multi-level circuit substrate, method for manufacturing same and method for adjusting a characteristic impedance therefor

An optical module of the present invention is provided with a substrate that includes an insulating layer, a passive element provided inside or on the surface of the insulating layer, and terminal electrodes formed on the surface of the insulating layer, and with at least one active element, which includes at least an optical element and is connected to the terminal electrodes on the substrate surface. The passive element has a dielectric layer, a resistive layer, or a magnetic layer, at least one of the terminal electrodes is connected to the passive element, and at least one of the at least one active element has a protruding electrode and is flip-chip mounted to the terminal electrodes on a principle face of the substrate via the protruding electrode. Taking a plane parallel to the principle face of the substrate as a projection plane, then an area of orthographic projection of the dielectric layer, the resistive layer, or the magnetic layer is smaller than an area of orthographic projection of the principle face of the substrate, and the dielectric layer, the resistive layer, or the magnetic layer is formed such that the orthographic projection, with respect to the projection plane, of all the protruding electrodes of the at least one active element that is flip-chip mounted to the principle face of the substrate is included in the orthographic projection of the dielectric layer, the resistive layer, or the magnetic layer. Thus, the optical module has good high frequency properties and the optical element can be mounted stably onto the substrate.

Optical module

Transmission line structure is composed of a pair of signal conductors which are embedded in one wiring region of a dielectric layer and a thickness in height of the signal conductor is larger than a width, and is constituted so that a coupling impedance between the adjacent signal conductors is lower than a coupling impedance between the signal conductor and another conductor formed in another wiring region, and thus to provide a multi-layer wiring board having a transmission line structure of high wiring density and excellent transmission characteristic.

Multilayer wiring board embedded with transmission line conductor

A first bump and a second bump are formed on the surface of a mounting board (substrate) so that the second bump is allowed to be higher than the first bump. A conductive adhesive member is transferred onto those bumps. A semiconductor substrate in which a mesa portion has been processed is mounted on the mounting board so that the first bump does not come into contact with an electrode on a top of the mesa portion directly while electrically connected to the electrode via the conductive adhesive member. In the semiconductor device in which the semiconductor substrate is mounted with an active surface processed to form the mesa portion facing the mounting board, the stresses applied to the mesa portion (a stress caused in mounting and a stress due to a heat cycle in use) are relieved, thus preventing deterioration of an element.

Semiconductor device and method of manufacturing the same

An insulator is provided between interconnect layers oppositely placed. The interconnect layers are connected between by connection members provided through the insulator. The connection members at one and the other ends are connected between in their center positions. A shield layer is provided spaced from the intermediate connection layer generally on a same plane as the intermediate connection layer. The interconnect layers where considered generally as a circular cylinder have a diameter m, and the intermediate connection layer where considered generally as circular has a diameter r, r<m is given where the connection members are high in characteristic impedance than the interconnect layers, and r<m is given where the connection members are low in characteristic impedance then the interconnect layers.

The semiconductor package of this invention includes: a semiconductor element having a power supply terminal, a ground terminal, and an output terminal; an inductance; and a capacitance. One of opposing terminals of the capacitance is connected to the power supply terminal of the semiconductor element, and the other terminal is connected to the ground terminal of the semiconductor element. The ground terminal of the semiconductor element is connected to a ground terminal of the semiconductor package, the power supply terminal of the semiconductor element is connected to a power supply terminal of the semiconductor package via the inductance, and the output terminal of the semiconductor element is connected to an output terminal of the semiconductor package.

Electric circuit and package for semiconductor

Disclosed is a SAW element with a propagation substrate that is a piezoelectric substrate. An auxiliary substrate is laminated on one surface of the propagation substrate by way of direct bonding, and a comb-shaped electrode is formed on another surface of the propagation substrate that is opposite the surface with the auxiliary substrate. The electrode excites an acoustic wave. The propagation substrate and the auxiliary substrate are not bonded to each other in at least a region immediately below a region where the comb-shaped electrode is formed. A coefficient of thermal expansion in a propagation direction of the acoustic wave of the auxiliary substrate is smaller than a coefficient of thermal expansion in a propagation direction of the acoustic wave of the propagation substrate.

Surface acoustic wave element

A resonator ladder type surface acoustic wave filter, has an input electrical terminal, an output electrical terminal, and a grounding terminal being formed on a piezoelectric substrate, a series arm surface acoustic wave resonator and a parallel arm surface acoustic wave resonator, each constructed from an interdigital transducer for exciting a surface acoustic wave, being formed between said input electrical terminal and said output electrical terminal, and when the center frequency of said resonator ladder type surface acoustic wave filter is denoted by fc, and capacitance determined by the number of electrode finger pairs and electrode finger overlap width in said interdigital transducer of said parallel arm surface acoustic wave resonator is denoted by Cp (fc: center frequency [GHz], Cp: capacitance of the interdigital transducer of the parallel arm surface acoustic wave resonator), capacitance C of multiples of said parallel arm surface acoustic wave resonator, connected to the same node between said input electrical terminal and said output electrical terminal, always satisfies the relation

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Osaka, Japan

Yutaka Taguchi