Super Silicon Crystal Research Institute Corp.

Yutaka Shiraishi

Nobumitsu Takase

Tomohisa Machida

The present invention aims to improve thermal efficiency and to reduce melting time when a raw material in an auxiliary crucible is heated and melted by induction heating method. When an initial raw material is at low temperature and its conductivity is relatively low, a conductive carbon cylinder is arranged at such a height as to cover the entire side wall of the auxiliary crucible , and when high frequency current is applied on a high frequency coil , secondary induction current is generated on the carbon cylinder . Then, Joule heat is generated on the carbon cylinder by the secondary induction current, and heat of the carbon cylinder is transmitted to the raw material inside via the auxiliary crucible . Thus, the raw material is heated, and melting is started. When the raw material is melted, an insulating ceramic base is arranged at such a position as to cover the entire side wall of the auxiliary crucible . Because conductivity of the raw material is gradually increased, secondary induction current is generated in the melt , and Joule heat is generated in the melt itself by the secondary induction current.

Single crystal material auxiliary melting apparatus and single crystal material melting method

With relatively simple arrangement and at low cost, the present invention provides a single crystal pulling apparatus, by which it is possible to prevent a single crystal from being turned to polycrystal, to move the crystal itself smoothly and gently from a necking portion during pulling operation of the single crystal, and to reliably hold the single crystal even in case of trouble such as power suspension. The apparatus comprises a support base,as a dish-shaped member to support a portion with larger diameter,from below under a seed crystal,pulley means,for rotating the support base and being movable between a position where the support base does not support the lower end of the portion with larger diameter of the single crystal and a position where it supports the lower end of the portion with larger diameter depending on the rotation angle, pulley rotating means,and,for rotating the pulley means and moving said support base between said two positions, and pulling lifting means,and,for moving up said support base by lifting the pulley means while controlling the rate.

Single crystal pull-up apparatus and single crystal pull-up method

The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. According to the present invention, a constricted portion is formed under a seed crystal, and a single crystal is pulled up by supporting the constricted portion, and a support base 30 is used, which has an opening 22, serving as a through-hole, and a slit 34, which leads from the opening to outer periphery of the support base, and a portion with larger diameter of the constricted portion is supported from below in linear contact manner. The support base 30 further comprises a recess 32, which leads to the opening 22, and it can be designed and selected to have such configuration as to suit the shape of the constricted portion. The support base 30 can be moved between a non-support position and a support position by operating a moving unit. The driving unit of the seed crystal lift mechanism and the driving unit of the support base moving mechanism are accommodated in an accommodation container 10a, and a mechanism for moving up and down the accommodation container may be provided.

Single crystal pulling apparatus, single crystal support mechanism, and

The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. The semiconductor manufacturing apparatus of the invention comprises a seed crystal lift mechanism for holding a seed crystal and for moving it up and down, and a single crystal gripping mechanism for gripping a constricted portion of a single crystal formed, whereby the apparatus comprises an accommodation container 10a for accommodating at least a driving unit 14 of the seed crystal lift mechanism and at least a driving unit 15 of the single crystal gripping mechanism, and further accommodation container lift mechanisms 3 and 4 for moving the accommodation container up and down. The accommodation container may be designed in heat-insulating structure, or a cooling means for cooling inside the accommodation container may be further provided. It is also arranged in such manner that power cable and cable for control signal 7 of the seed crystal lift mechanism or the single crystal gripping mechanism are wound up in synchronization with operation of a mechanism 4 for winding up a wire 3, which suspends the accommodation container.

Growing community of inventors

Annaka, Japan

Yutaka Shiraishi