Kabushiki Kaisha Toshiba

Tokyo Electron Limited

Tel Sagami Limited

Tokyo Electron Tohoku Limited

Yutaka Shimada

Hitoshi Kato

Haruki Mori

Susumu Tanaka

Tatsuo Shiotsuki

Yuki Hamada

Yasushi Sasaki

Kazutugu Aoki

Junichi Kakizaki

Susumu Fukuoka

A substrate processing apparatus comprising a process tube for enclosing a plurality of semiconductor wafers, injectors for introducing process gas into the process tube, a vacuum pump for exhausting the process tube, RF electrodes arranged along the outer circumference of the process tube and serving to generate high frequency electric field, when power is supplied, in a process-gas-introduced region so as to make process gas into plasmas, a high frequency power source for supplying power to the RF electrodes, heaters arranged in the process tube to directly heat the plural wafers, a power supply for supplying power to the heaters, and a controller for controlling the amount of power supplied from the power supply to the heaters.

Plasma processing apparatus etching tunnel-type

In a plasma processing apparatus of this invention, a reaction chamber opposed to a plasma generating chmaber is entirely opened at its one side surface opposing the obect to be processed, and an interval between the one side surface and the other side surface is set to be an integer multiple of a 1/2 wavelength of the microwave. A microwave oscillated by a microwave oscillator and supplied to a vacuum vessel can be converted into a plasma energy with high conversion efficiency, thereby minimizing a reflected wave.

Plasma processing apparatus

Growing community of inventors

Sagamihara, Japan

Yutaka Shimada