Alps Electric Co., Ltd.

Tohoku University

Nec Tokin Corporation

Fuji Electric Co., Ltd.

Other

Hitachi Maxell, Limited

Showa Denko Kabushiki Kaisha

Tokin Corporation

Kazuaki Fukamichi and Ykk Corporation

Yutaka Shimada

Osamu Kitakami

Shigeyoshi Yoshida

Takashi Hatanai

Koichi Mukasa

Keishi Nakashima

Kazuaki Fukamichi

Satoshi Okamoto

Hiroyuki Uwazumi

Takehito Shimatsu

Hiroshi Ono

Tadaaki Oikawa

Mitsuharu Sato

Eishu Sugawara

Hajime Aoi

Hiroaki Muraoka

Yoshihisa Nakamura

Naoya Hasegawa

Akihiro Makino

Takashi Hasegawa

Hideo Fujiwara

Hideki Takeda

Norihiko Ono

Yoshio Awakura

Masahiro Yamaguchi

Michio Nemoto

Osamu Ito

Noriyuki Kataoka

Tetsuo Itoh

Akihiko Hosono

Hiroshi Kojima

Eiji Yamanaka

Tomoaki Sakurai

Valentyn Novosad

Yoshichika Otani

Hiroko Uyama

Kim Jek Jun

A perpendicular magnetic recording medium according to which both the thermal stability of the magnetization is good and writing with a magnetic head is easy, and moreover the SNR is improved. In the case of a perpendicular magnetic recording medium comprising a nonmagnetic substrate (), and at least a nonmagnetic underlayer (), a magnetic recording layer (), and a protective layer () formed in this order on the nonmagnetic substrate (), the magnetic recording layer () comprises a low Kregion () layer having a perpendicular magnetic anisotropy constant (Kvalue) of not more than 1&#xd7;10erg/cm, and a high Kregion () layer having a Kvalue of at least 1&#xd7;10erg/cm. Moreover, the magnetic recording layer () is made to have therein nonmagnetic grain boundaries that contain a nonmagnetic oxide and magnetically isolate crystal grains, which are made of a ferromagnetic metal, from one another.

Perpendicular magnetic recording medium

There is provided a perpendicular magnetic recording medium according to which both the thermal stability of the magnetization is good and writing with a magnetic head is easy, and moreover the SNR is improved. In the case of a perpendicular magnetic recording medium comprising a nonmagnetic substrate, and at least a nonmagnetic underlayer, a magnetic recording layerand a protective layerformed in this order on the nonmagnetic substrate, the magnetic recording layercomprises a low Kregionlayer having a perpendicular magnetic anisotropy constant (Kvalue) of not more than 1&#xd7;10erg/cm, and a high Kregionlayer having a Kvalue of at least 1&#xd7;10erg/cm. Moreover, the magnetic recording layeris made to have therein nonmagnetic grain boundaries that contain a nonmagnetic oxide and magnetically isolate crystal grains, which are made of a ferromagnetic metal, from one another.

An electromagnetic noise suppressing thin film has a structure including an inorganic insulating matrix made of oxie, nitride, fluoride, or a mixture thereof and columnar-structured particles made of a pure metal of Fe, Co, or Ni or an alloy containing at least 20 weight % of Fe, Co, or Ni and buried in an inorganic insulating matrix.

Electromagnetic noise suppressing thin film

In a semiconductor bare chip () on the front surface whereof is formed an integrated circuit, a magnetic loss filmis formed on the back surface of that semiconductor bare chip.

Electromagnetic noise suppressor, semiconductor device using the same, and method of manufacturing the same

A composite magnetic material is provided for use as an electromagnetic interference suppressing body for effectively suppressing an electromagnetic interference within a high frequency apparatus including a mobile communication terminal. The composite magnetic material consists essentially of a soft magnetic powder and an organic binder and is electrically non-conductive and has at least two magnetic resonances caused by at least two anisotropic magnetic fields (Hk). In the composite magnetic material, the anisotropic magnetic fields (Hk) are different in strength from each other.

Composite magnetic material and electromagnetic interference suppressor member using the same

A first thin film including at least one transition metal selected from the group consisting of Co, Fe and Ni, and a second thin film including at least one platinum group element selected from the group consisting of Pt and Pd are prepared. Then, a multilayered structure where said first thin film and said second thin film are stacked is formed. Then, the multilayered structure is heated at the same time or after the formation of said multilayered structure, thereby to counter-diffuse constituent elements of said first thin film and said second thin film and alloy said at least one transition metal and said platinum group element.

Method for fabricating a magnetic recording medium

A lattice shaped underlayer made of a ferroelectric material having a piezoelectric effect is formed on a substrate. On the crossing points of the underlayer magnetic films with a magnetoelastic effect are formed. By applying a voltage to the given column and row of the underlayer, the underlayer is stressed at the crossing point. Then the stress is transmitted to the magnetic film on the same crossing point making the magnetization reverse through the magnetoelastic effect, thus, carrying out writing to the MRAM.

Writing method for a magnetic immovable memory and a magnetic immovable memory

The present invention aims to provide an excellent exchange coupling thin film consisting of a completely novel material other than FeMn or NiMn and having excellent corrosion resistance and high resistivity, and a magnetoresistive element and a magnetic head each of which include the exchange coupling thin film. The exchange coupling thin film includes an antiferromagnetic film mainly composed of a crystal phase of a body-centered cubic structure and containing Cr and element M where element M contains at least one element of the 3B group elements in the Periodic Table, or Al, Ga or In, and a ferromagnetic film containing at least one of Fe, Ne, and Co, both films being laminated in contact with each other, wherein magnetic exchange coupling is generated in the interface between the antiferromagnetic film and the ferromagnetic film.

Exchange coupling thin film and magnetoresistive element comprising the

A bulk magnetoresistance effect material of a composition represented by the general formula: T.sub.100-A M.sub.A (wherein T is at least one element selected between Cu and Au; M is at least one element selected from the group consisting of Co, Fe, and Ni; and A is in the range: 1.ltoreq.A.ltoreq.50 by atomic percent) is prepared by casting a molten mixture of the above composition, and subjecting the resulting casting to homogenization and further to heat treatment. The bulk magnetoresistance effect material is high in the rate of change in the electrical resistance thereof, i.e., shows a large magnetoresistive effect and can be obtained in such bulk form in arbitrary shapes adaptable for various uses. Using the material, various types of magnetoresistive elements are obtained.

Magnetoresistance effect material, process for producing the same, and

A composite magnetic article for use as an electromagnetic interference suppressing body, which comprises soft magnetic powder of at least one soft magnetic composition having a magnetostriction constant, each of particles of the powder being flaky, and organic binding agent binding said soft magnetic powder dispersed therein. The soft magnetic powder is as annealed after being worked flaky. The flaky particles of the soft magnetic powder have an average thickness less than a skin depth within which the skin effect occurs at a frequency band for which said composite magnetic article is used, each having an oxide outer layers.

Composite magnetic article for electromagnetic interference suppressor

Disclosed is a soft magnetic film comprising a thin film of magnetic material of cubic symmetry, characterized in that crystal face (111) of the thin film is oriented substantially parallel to the surface of the thin film.

Thin soft magnetic film and method of manufacturing the same

A cobalt-base ternary alloy containing small amounts of hafnium and tantalum formed by sputtering, vapor deposition, etc., is used as the principal magnetic pole of a magnetic head for perpendicular magnetic recording, the core thin layers of a thin layer magnetic recording head, or the magnetic shield thin layers of a thin layer magnetic reproducing head. The ternary amorphous alloy has a high permeability and a high saturation magnetic flux density and hence the thickness of the foregoing layers composed of the alloy can be reduced as thin as possible.

Magnetic head

A perpendicular magnetic recording medium composed of a base material, a 1st magnetic thin layer formed on the base material, and a perpendicularly magnetizable 2nd magnetic thin layer formed on the 1st magnetic thin layer, wherein the 1st magnetic thin layer is composed of a Co-base ternary amorphous alloy containing small amounts of Hf and Ta.

Magnetic recording medium

The present invention relates to an amorphous alloy to a soft magnetic material comprising an amorphous alloy layer, which material has such an excellent magnetic-stability that it does not undergo a secular change and which has a high magnetization and an extremely small magnetostriction. The soft magnetic material of the present invention comprises at least one amorphous magnetic alloy layer consisting of a composition expressed by (TM).sub.1-x (M.sub.I, M.sub.II).sub.x, wherein TM essentially consists of Co, M.sub.I is at least one element selected from the group consisting of Zr, Hf, and Y, M.sub.II is at least one metallic element selected from the group consisting of Nb, Ta, Mo, and W, x is from 0.05 to 0.2, and the ratio M.sub.II (M.sub.I and M.sub.II) is from 0.3 to 0.9. The method according to the present invention comprises a step of alternately depositing the amorphous magnetic alloy and an insulating material on a nonmagnetic base, thereby forming a multilayer laminate.

Multilayer composite soft magnetic material comprising amorphous and

A soft magnetic material having a low coercive force and a high permeability without reduction in saturation magnetic flux density is composed of a Co-base Co-Hf-Ta amorphous alloy containing 1 to 5 atoms % Hf and 4 to 10 atoms % Ta. The amorphous alloy is prepared by sputtering, etc.

Soft magnetic material

Growing community of inventors

Sendai, Japan

Yutaka Shimada