Canon Kabushiki Kaisha

Yutaka Setomoto

Takashi Nakamura

Shinan Wang

Takayuki Teshima

Shinichiro Watanabe

Atsunori Terasaki

Takahiro Akiyama

Takayuki Sumida

Ayako Maruyama

A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

Method for producing hollow structure and hollow structure

The present invention offers a device requiring a reduced number of manufacturing processes and providing high electrical reliability, and a method for manufacturing the device. The method for manufacturing the device forms through holes in a substrate, fills the through holes with a conductive material through electroplating from a first surface side of the substrate, polishes the conductive material to form through wirings, and forms an element portion on the first surface side. Then, the method processes the substrate so that the positions of the end faces of the through wirings measured from the substrate surface on the first surface side are made smaller in depth than the positions of the end faces of the through wirings measured from the substrate surface on the second surface side.

Method for manufacturing through wiring substrate and method for manufacturing device

A method for creating an electronic device including a semiconductor substrate, an element unit, a through wiring line, and a wiring portion includes forming interstitial via holes in a first surface of the substrate, forming a first insulating film on the inner walls of the via holes, forming openings that reach the first insulating film on the bottoms of the via holes from a second surface of the substrate, forming a second insulating film on the bottoms of the openings, forming a through wiring line in the via holes, forming an element unit that electrically connects the through wiring line, reducing the thickness of the substrate from the second surface so that the second surface becomes flush with the second insulating film on the bottoms of the openings, and forming a wiring portion, on the second insulating film, that electrically connects to the through wiring line.

Transducer device comprising an insulating film between a through wiring line and a semiconductor substrate

A capacitive transducer includes a substrate having a first surface and a second surface opposite the first surface, the substrate including a through wire extending therethrough between the first surface and the second surface, and a cell on the first surface, the cell including a first electrode and a second electrode spaced apart from the first electrode with a gap between the first electrode and the second electrode. Conductive protective films are disposed over surfaces of the through wire on the first surface side and the second surface side of the substrate.

Device with electrode connected to through wire, and method for manufacturing the same

A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.

Microstructure manufacturing method

In a method of producing a device in which an element structure is provided on a substrate including a through wiring, a through hole is formed so as to extend from a first surface of the substrate to a second surface of the substrate disposed on an opposite side of the substrate to the first surface, the through wiring is formed by filling the through hole with an electrically conductive material, and the element structure is formed on a first surface side. In the step of forming the through hole, a degree of surface irregularities of an inner wall of the through hole is larger on the first surface side than on a second surface side.

Method of producing through wiring substrate and method of producing device

The present invention relates to a method for manufacturing a structure, including the steps of forming a recessed section in a first surface of a substrate; filling the recessed section with metal to form a metal structure; exposing the metal structure from the substrate; and applying resin onto the exposed metal structure and solidifying the resin to form a resin layer.

Structure, method for manufacturing the same, and image pickup apparatus including the structure

A microstructure manufacturing method includes forming a layer of a photosensitive resin on a substrate surface having an electrical conductivity, forming a structure of the photosensitive resin by exposing the layer of the photosensitive resin to light and developing the layer of the photosensitive resin to expose a part of the substrate surface, forming a first plated layer on the exposed part of the substrate surface by soaking the structure of the photosensitive resin in a first plating solution, curing the structure of the photosensitive resin after forming the first plated layer, removing at least part of the first plated layer after curing the structure of the photosensitive resin, and forming a second plated layer on a part where the first plated layer is removed, by soaking the structure of the photosensitive resin in a second plating solution different from the first plating solution.

A process of producing a grating to be used in an X-ray image pickup apparatus includes the steps of preparing a grating having a plurality of protrusions periodically arranged, curving the grating in the direction in which the plurality of protrusions is arranged, and filling spaces between the protrusions with a metal in a state that the grating is curved.

Process of producing grating for X-ray image pickup apparatus

A microstructure manufacturing method includes: preparing a mold having on a front side thereof a plurality of fine structures, with conductivity being imparted to a bottom portion between the plurality of fine structures; forming a first plating layer between the plurality of fine structures by plating the bottom portion; and forming a second plating layer of larger stress than the first plating layer on the first plating layer between the plurality of fine structures, wherein the stress of the second plating layer is used to curve a back side surface of the mold.

Microstructure manufacturing method and microstructure

A method of manufacturing a structure includes a step of preparing a substrate including a silicon section, recessed sections and protruding sections formed by etching the silicon section, and a first insulating layer disposed on top portions of the protruding sections; a step of forming second insulating layers on sidewalls and bottom portions of the recessed sections; a step of forming seed layers containing metal above the bottom portions of the recessed sections; and a step of forming plating layers in such a manner that the recessed sections are filled with metal by electroplating. The second insulating layers contain an organopolysiloxane having at least one of a partial structure represented by the following formula (1) and a partial structure represented by the following formula (2): where R, R, and Rrepresent alkyl groups identical to or different from each other.

Growing community of inventors

Tokyo, Japan

Yutaka Setomoto