Seiko Instruments Inc

Kyowa Hakko Kogyo Co., Ltd.

Seiko Instruments R & D Center Inc.

Tdk Corporation

Ube Industries, Inc.

Interchip Corporation

Takion Co., Ltd.

Yutaka Saitoh

Jun Osanai

Yutaka Kanda

Masataka Shinogi

Kenji Kato

Shiro Akinaga

Tsutomu Agatsuma

Yoshikazu Kojima

Yoshifumi Yoshida

Hirofumi Nakano

Chikara Murakata

Tamio Mizukami

Kazuhito Akasaka

Keiji Sato

Yoshinori Yamashita

Tsutomu Akama

Hirofumi Harada

Katsuhiko Ando

Katsushige Gomi

Tatsuya Tamaoki

Shinichi Yoshida

Masanori Miyagi

Masami Okabe

Yukimasa Shiotsu

Isami Takahashi

Shinichiro Ito

Shun-ichi Ikeda

Haruo Konishi

Yukiharu Kinoshita

Fumiyasu Utsunomiya

Tsutomu Tanaka

Yuzuru Matsuda

Kenichi Mochida

Fumihiko Kanai

Tadao Akamine

Takeo Tanaka

Youichi Uosaki

Hidemasa Kondo

Junko Yamanaka

Kazuaki Kubo

Hiroyuki Nagata

Toru Machida

Toru Shimizu

Tetsuya Kaneko

Fumito Koizumi

Takako Shiraki

Atsuhiro Hasegawa

Harumi Ue

Hirokazu Ikeda

Yuji Yamamoto

Kazuo Kato

Osamu Koseki

Masaaki Kamiya

Akira Asai

Hiromitsu Saito

Tadashi Ashizawa

Kazuo Matsubara

Chiaki Nakamura

Eiji Tsukuda

Keiko Ochiai

Kazutoshi Ishii

Masaaki Mandai

Kazuo Aisaka

Tomoyuki Yoshino

Naoto Saitoh

Shinji Nara

Shozo Katsuki

Kinya Yamashita

Masami Kaneko

Shingo Kakita

Yuichi Takahashi

Katsunori Kita

Noboru Fujii

Akira Ohnishi

Sumitaka Tachikawa

Junichi Watanabe

Yasushi Nishiie

Naoki Morishima

Mafumi Kondoh

Teruji Cho

Junko Kohagura

Kazuyo Sugiyama

Takako Iida

Yoji Ikuina

Kenji Katoh

Masahiro Inoue

Kouei Ozaki

Toshiaki Narukawa

Yukiharu Kimoshita

Shinichirre Stro

Kazuo Katao

Tsutomu Tanka

A wireless measuring deviceis provided which includes a plurality of child unitsand a parent unitto receive data measured by these child unitsby wireless communication. Each of the child unitshas a controlling sectionthat can move to a standby state, a measuring section, a signal receiving sectionto receive a measurement instructing signal from the parent unit, and a signal transmitting sectionto transmit the measured data by wireless communication. The parent unithas a signal transmitting section to transmit the measurement instructing signal to each of the child unitsand a measured data receiving sectionto receive measured data to be transmitted from the signal transmitting section

Wireless measuring device

UCS 1025 derivatives having antitumor activity or antibacterial activity which are represented by formula (I):wherein Rrepresents hydrogen, lower alkyl, etc.; Rrepresents hydrogen, or is combined with Rto represent a bond, etc., or is combined with Rto represent &#x2014;O(C&#x2550;O)&#x2014;, etc.; Rrepresents hydrogen, etc., or is combined with Rto represent a bond, etc.; Rrepresents hydrogen, etc., or is combined with Rto represent &#x2014;(C&#x2550;O)O&#x2014;, etc.; Rrepresents hydrogen or is combined with Rto represent a bond; Rrepresents hydrogen, etc., or is combined with Rto represent a bond; Rrepresents hydrogen or is combined with Rto represent &#x2550;O; Rrepresents hydroxy or is combined with Rto represent &#x2550;O;represents a single bond or a double bond, and a represents a single bond (two carbon atoms to which a is bound are combined to form a single bond) or an oxygen atom, or pharmaceutically acceptable salts thereof.

UCS1025 derivatives

LK6-A derivatives

To provide a power supply apparatus that replaces a dry battery by detecting electric field energy in a free space, rectifying the energy, extracting the energy as electric power, and accumulating the electric power. In particular, there is provided a power supply apparatus that is useful for a portable electronic equipment. An electromagnetic energy conversion unit collects a radio wave propagating in the air and converts collected electromagnetic energy into electric power. A rectifying unit generates electric power having a DC waveform by rectifying electric power having an AC waveform and charges the rectified electric power having the DC waveform into a secondary battery. An electric load is supplied with the rectified electric power having the DC waveform or with electric power having a DC waveform discharged from the secondary battery.

Power supply apparatus and electronic equipment

Pyrrolo &lsqb;4,3,2-de&rsqb; quinoline derivatives

A MISFET is provided with a segmented channel comprising regions in which the channel is inverted by a first gate voltage and regions in which the channel is inverted by a second gate voltage. The MISFET is formed in a semiconductor substrate having a first conductivity type and the first inversion region of the channel has a first impurity concentration determined by the surface concentration of the substrate. The second inversion region of the channel has a second impurity concentration determined by doping an impurity to the region selected by a photolithographic process. The first and second inversion regions may be divided into a plurality of plane shapes and the threshold voltage of the MISFET is set to a desired value in accordance with the plane area ratio of the first and second inversion regions.

Semiconductor device and manufacturing method thereof

A MOS-type capacitor includes a semiconductor substrate of a first conductive type serving as a first electrode, a conductor layer formed on the semiconductor substrate via a capacitive insulation film and serving as a second electrode, and an impurity region of a second conductive type formed in the vicinity of the surface of the semiconductor substrate at a location in proximity to a region facing the conductor layer. The MOS-type capacitor is used as a variable capacitor in a VCO (voltage-controlled oscillator) having a widened frequency range.

MOS-type capacitor and integrated circuit VCO using same

In a MISFET, areas where a channel surface of a channel region is inverted by a first gate voltage and areas where the channel surface is inverted by a second gate voltage are provided in the channel region of the MISFET in plane as components thereof. The channel region,having a first impurity concentration determined by a surface concentration of a P-type semiconductor substrate and a channel region,having a second impurity concentration determined by doping an impurity to the region selected by a pattern,of a mask for doping impurity by ion implantation and others are provided in a channel region of an N-type MOSFET on the P-type semiconductor substrate. The channel region,having the first impurity concentration and the channel region,having the second impurity concentration are divided into a plurality of plane shapes. The channel region of the same MOSFET may be structured by the plurality of plane shapes having the plurality of impurity concentrations as described above and a threshold voltage of the MOSFET may be readily set to a desired value in response to a plane area ratio of the area having the first impurity concentration and the area having the second impurity concentration, allowing to realize a high performance semiconductor integrated circuit device at low cost.

A semiconductor device comprises a depletion-type NMOS transistor having a source region, a drain region connected to a power supply line, and a gate electrode connected to a ground line. An enhancement-type NMOS transistor has a source connected to the ground line, a drain connected in series with the source of the depletion-type MOS transistor between the power supply line and the ground line to define an output terminal, and a gate electrode connected directly to the output terminal.

CMOS semiconductor device

A process for producing a semiconductor device comprises heat-treating an oxygen-containing silicon substrate in an inert atmosphere to change a concentration of oxygen contained in the silicon substrate to within a range of 5&times;10,/cm,to 10&times;10,/cm,, and heat treating the silicon substrate in an oxidative atmosphere to form a silicon oxide film.

Process for producing semiconductor device

A semiconductor acceleration sensor comprises a cantilever structure formed from a semiconductor wafer and having a first surface for receiving an acceleration force, a second surface disposed generally orthogonal to the first surface, and strain sensing portions disposed on the second surface. A supporting body supports the cantilever structure. A plurality of bridge circuits are disposed on the second surface of the rectangular parallelepiped shaped structure. Each of the bridge circuits has a plurality of the strain sensing portions.

Semiconductor acceleration sensor

A method of manufacturing a semiconductor acceleration sensor comprises forming a strain sensing section on a surface of a semiconductor wafer, fixing the semiconductor wafer to a cooled fixing stage, cutting out a structural body having the strain sensing section from the semiconductor wafer, and connecting a support member to the structural body cut from the semiconductor wafer.

Method of manufacturing semiconductor acceleration sensor

A solid-state radiation detecting device comprises an insulation layer having a pair of opposed surfaces. First and second single crystal silicon semiconductors are disposed on respective ones of the opposed surfaces of the insulating layer. A photoelectric conversion element is disposed on the first single crystal silicon semiconductor. A signal processing circuit having a charge transfer device is disposed on the second single crystal silicon semiconductor.

Solid-state radiation detector having a charge transfer device

An improvement of a resistance to electrostatic discharge of a semiconductor integrated circuit device is aimed. An IC having a high ESD immunity is realized by causing a surface concentration of N type impurities in a drain area of an N-channel type MOS transistor to be more than 5 E 18/cm.sup.3 in maximum in the direction of gate electrode of a gate electrode terminal and to have a monotonous concentration profile in which there is no kink in a portion less than 5 E 18/cm.sup.3 in the surface direction.

A semiconductor acceleration sensor comprises a base having a first surface for receiving an acceleration force and a second surface disposed generally perpendicular to the first surface. A first detector is disposed on the second surface of the base for detecting an acceleration force in a horizontal direction of the base. A second detector is disposed on the second surface of the base for detecting an acceleration force in a vertical direction of the base. A support member is connected to one end of the base for supporting and fixing the base.

Growing community of inventors

Chiba, Japan

Yutaka Saitoh