Seiko Instruments Inc

Kyowa Hakko Kogyo Co., Ltd.

Kyowa Hakko Kogyo Kabushiki Kaisha

Nec Corporation

Tdk Corporation

National Cancer Center

Other

Shimizu Construction Co., Ltd.

Sony Group Corporation

Mitsubishi Chemical Corporation

Showa Denko K.k.

Yokogawa Electric Corporation

Showa Denko Kabushiki Kaisha

Denka Company Limited

Mpi Corporation

Yutaka Saito

Makoto Morimoto

Masaji Kasai

Tadashi Ashizawa

Motomichi Kono

Yoshikazu Kojima

Hirofumi Nakano

Kunikatsu Shirahata

Kenichi Kamijo

Kimiyasu Takoh

Ikuma Takahashi

Motoyasu Okutsu

Masayoshi Yamada

Ryuji Hamamoto

Hiroshi Sano

Keiji Sato

Takanori Sato

Masaaki Kamiya

Yasushi Watanabe

Masahiro Saikou

Masami Okabe

Hitoshi Imaoka

Maki Sano

Chiemi Tanaka

Yasukazu Nakamura

Jun Osanai

Chikara Murakata

Shiro Akinaga

Hiroshi Kase

Katsuhiko Ando

Isao Kawamoto

Katsushige Gomi

Masaaki Mandai

Hiroto Kasai

Tomoyuki Yoshino

Hitoshi Takeuchi

Keiichi Takahashi

Yoichi Uosaki

Masahiro Onizuka

Shigeo Katsumata

Hidetaka Okamoto

Toshiaki Iwazaki

Toshimitsu Takiguchi

Yoshihiro Orito

Shozo Kawada

Kenta Mukai

Naoki Kobayashi

Hiroshi Takahashi

Hiroshi Suzuki

Kenji Kato

Yutaka Kanda

Yoshinori Yamashita

Mitsuru Takahashi

Yuzo Shimada

Masataka Shinogi

Hiroshi Odagiri

Masahiro Kato

Kazuaki Utsumi

Hiromitsu Saito

Koji Yamada

Kazutoshi Ishii

Tatsuya Tamaoki

Yuzuru Matsuda

Shizuo Shiozaki

Akeo Kasakura

Yukimasa Shiotsu

Kensuke Ara

Tadao Akamine

Kenichi Ikeda

Hitomi Watanabe

Akira Sato

Shinzo Ishii

Mayumi Yoshida

Hiroshi Okuyama

Mitsunobu Hara

Satoshi Nakanishi

Shota Ohtsuka

Toru Ito

Tatsu Kimura

Shuzo Fujii

Yasuyuki Sakaguchi

Osamu Hosokawa

Wataru Nishino

Akira Mihara

Junko Yamanaka

Yoshimasa Sakai

Yuko Arai

Sei Kakinuma

Yoshikazu Morishita

Tohru Yasuzawa

Takako Shiraki

Tatsuya Shimazaki

Takao Akiba

Seiho Kitagawa

Tomoo Shokawa

Hideyo Shiokawa

Katsuhiro Horiguchi

Koju Nonaka

Junichi Watanabe

Hideo Nakajima

Orifice part for flow cytometer

Provided are an information processing device, a display method, and a program that allow to easily grasp during examination that a lesion is captured how long before from now which is detected by detection processing for an image captured by an endoscope. An information processing device includes: an image acquisition unit configured to sequentially acquire a current image captured by an endoscope; a lesion detection unit configured to sequentially perform detection processing of a lesion site on the images sequentially acquired by the image acquisition unit; and a display control unit configured to display, on a display device, a degree of lapse of time up to a current time from a capturing time of the image in which the lesion site is detected by the lesion detection unit.

Information processing device, display method, and non-transitory computer-readable medium for storing a program for lesion detection processing supporting decision making using machine learning

A chloroprene-based block copolymer, a latex, a latex composition, and a rubber composition that can produce a product with excellent flexibility and tensile properties without the use of a vulcanizing agent or a vulcanizing accelerator. A chloroprene-based block copolymer, includes 5 to 30% by mass of a polymer block (A) and 70 to 95% by mass of a chloroprene-based polymer block (B), wherein: the polymer block (A) is derived from a monomer; when the monomer is polymerized alone, a polymer with a glass transition temperature of 80° C. or higher can be obtained; the chloroprene-based polymer block (B) includes a chloroprene monomer; and the chloroprene-based block copolymer has a toluene insoluble content of 20 to 100% by mass with respect to 100% by mass of the chloroprene-based block copolymer.

Chloroprene-based block copolymer, latex, latex composition, and rubber composition

An information processing apparatus () detects an abnormal region () from a moving image frame (). The abnormal region () is a region that is estimated to represent an abnormal part inside a body of a subject. The information processing apparatus () generates and outputs output information based on the number of detected abnormal regions ().

Information processing apparatus, control method, and program

An information processing apparatus () detects an abnormal region () in each of a plurality of video frames () constituting video data () in which the inside of a body is captured. The information processing apparatus () outputs output information related to the detected abnormal region (). Herein, the information processing apparatus () starts outputting of the output information when a detection score based on a proportion of the number of the video frames () in which the abnormal region () is detected becomes equal to or more than a first threshold value in a state where outputting of the output information is not being performed. Further, the information processing apparatus () ends outputting of the output information when the detection score becomes equal to or less than a second threshold value in a state where outputting of the output information is being performed.

Information processing apparatus, control method, and non-transitory storage medium

LED lighting unit

An anti-noise component for a flat cable including a flat O-like ferrite core having a slit-like hole through which a flat cable is passed, and an openable and closeable case which covers the ferrite core while the slit-like hole is exposed through the case. Further, the case integrally has a coupling portion including a pawl for fixation to an apparatus on which the component is to be mounted.

Anti-noise component for flat cable

A semiconductor device is provided wherein carrier flows in a monocrystal silicon film having low oxygen concentration. As for a structure of the semiconductor device, a single semiconductor element or a plurality of semiconductor elements are provided on the monocrystal silicon film having low oxygen concentration which is provided on a backing substrate of which at least the surface is made of an insulating material. The backing substrate is provided so that the semiconductor device gets mechanical destructive strength. The insulating material is provided so that some particles never transfers from the backing substrate to the semiconductor film. The silicon film has-low oxygen concentration so that the lifetime of a minor carrier lengthens.

Semiconductor device having a semiconductor film of low oxygen

A semiconductor integrated circuit device has a peripheral transistor having a strengthened ESD resistance for external connection. The peripheral transistor has a channel structure effective to release an electrostatic stress current more efficiently than an internal transistor of the semiconductor integrated circuit. In one embodiment, the peripheral transistor has a channel portion that is shorter than the channel portion of an internal transistor. In another embodiment, the peripheral transistor has a substrate contact, a ground line, and an additional resistor interconnection between them to efficiently release an electrostatic stress current. In another embodiment, the peripheral transistor has an asymmetric channel structure so that the distance between the source contact and the gate electrode is set shorter than the distance between the drain contact and the gate electrode. In a further embodiment, the peripheral transistor has a drain region and a gate insulating film having a portion of the insulating film that is thinner than the rest of the gate insulating film. In another embodiment, a gate contact is electrically connected between a gate electrode and a metal gate line of the peripheral transistor to reduce a resistance therebetween. In another embodiment, the peripheral transistor has a transistor breakdown voltage that is smaller than a gate breakdown voltage to efficiently release electrostatic stress current.

Semiconductor integrated circuit device with electrostatic damage

The semiconductor image sensor device of the multiple chip mount type is constructed such that electrical and mechanical connections are carried out concurrently among chips. Coupling chips 4 are utilized to couple a plurality of semiconductor image sensor chips 1 with each other, and the couple one semiconductor image sensor chip 1 to a driver substrate 3 which mounts thereon a semiconductor driving chip 2 for driving the semiconductor image sensor chips 1.

Semiconductor sensor device comprised of plural sensor chips connected

A radio wave absorbent comprises an Ni--Cu--Zn base ferrite having a major composition comprising 49 to less than 50 mol % of Fe.sub.2 O.sub.3, 32 to 35 mol % of ZnO, 3 to 9 mol % of CuO and 9 to 14 mol % of NiO. The radio wave absorbent further contains an additive molybdenum oxide in an amount of greater than 0 to 0.10 wt %, calculated as MoO.sub.3, with the proviso that the total amount of the major composition is 100 wt %. The radio wave absorbent may be used as an exterior or interior material for a building or structure.

Radio wave absorbent

A wafer layout for a multi-channel device for improving the yield of operative devices comprises a semiconductor wafer and a plurality of semiconductor devices formed in the semiconductor wafer, each device comprising a consecutive series of impurity regions formed in the semiconductor wafer, the impurity regions being arranged consecutively without separation between the respective semiconductor devices, such that each of the semiconductor devices is indistinguishable from the others, without regard to defective devices, and a single semiconductor device comprising a plurality of consecutive impurity regions formed in the semiconductor wafer may be cut from the wafer by cutting therefrom any of the plurality of consecutive impurity regions formed therein. The invention is particularly useful for the fabrication of strip diodes and the like.

Wafer layout of semiconductor device and manufacturing method thereof

The invention provides a hexagonal Z type magnetic oxide sintered material having a high resistivity and high density, and an impedance device using the same. The hexagonal Z type magnetic oxide sintered material contains a main oxide component containing M wherein M is at least one of Ba and Sr, Co, and Fe and an auxiliary oxide component containing Si, having a resistivity of at least 10.sup.6 .OMEGA.-cm, a sintered density of at least 4.6 g/cm.sup.3, and an initial magnetic permeability of 5 to 25. Pb may be contained in the auxiliary oxide component. Co may be partially replaced by Me wherein Me is at least one of Ni, Zn, and Cu.

Hexagonal Z type magnetic oxide sintered material, method for making and

Growing community of inventors

Tokyo, Japan

Yutaka Saito