Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Yutaka Ooka

Shinji Miyazawa

Kensaku Maeda

Yusuke Moriya

Shunsuke Furuse

Yuichi Yamamoto

Atsushi Yamamoto

Reijiroh Shohji

Satoru Wakiyama

Masaki Haneda

Masaki Okamoto

Yoshifumi Zaizen

Nobutoshi Fujii

Naoki Ogawa

Masaya Nagata

Ken Ozawa

Hayato Iwamoto

Naoki Komai

Kazunori Nagahata

Naoto Sasaki

Takaaki Hirano

Taizo Takachi

Eiji Otani

Takashi Oinoue

Ozawa Ken

There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

Solid-state image sensor and electronic device

Picture quality deterioration is curbed. A solid-state imaging device according to an embodiment includes: a semiconductor substrate () including a light-receiving element; an on-chip lens () disposed on a first surface of the semiconductor substrate; a resin layer () covering the on-chip lens; and a glass substrate () disposed on the side of the first surface of the semiconductor substrate separately from the resin layer.

Solid-state imaging device and electronic apparatus for curbing deterioration of picture quality

The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.

Solid-state imaging element and imaging device

The present technology relates to a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. A semiconductor chip includes: an image pickup device; a transparent protective member that protects the image pickup device; an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member; a bonding layer that bonds the IR cut film and the protective member together; and a protective film that covers side surfaces of the IR cut film and the bonding layer. The present technology can be applied to, for example, a semiconductor chip for an image pickup device.

Semiconductor chip and electronic apparatus

Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Apparatuses and packages including a semiconductor substrate with a plurality of photoelectronic conversion regions and a transparent substrate

The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

Image sensor having improved dicing properties

There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Semiconductor device, manufacturing method for semiconductor device, and electronic device

There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

Provided is a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. The semiconductor chip includes an image pickup device, a transparent protective member that protects the image pickup device, an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member, a bonding layer that bonds the IR cut film and the protective member together, and a protective film that covers side surfaces of the IR cut film and the bonding layer.

Semiconductor chip and electronic apparatus for suppressing degradation of semiconductor chip

Provided is a solid-state imaging element that is a wafer-level chip size package, that includes an optical sensor chip, a protective layer that is stacked on a light receiving surface of the optical sensor chip, and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.

Growing community of inventors

Kanagawa, Japan

Yutaka Ooka