Daikin Industries, Ltd.

National Institute of Advanced Industrial Science and Technology

Other

Sony Corporation

Sanyo Electric Co., Ltd.

Asahi Glass Company, Limited

Funai Electric Company Ltd.

Fujitsu Corporation

Matsushita Electric Industrial Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Panasonic Corporation

Renesas Electronics Corporation

Renesas Technology Corp.

Showa Denko K.k.

Toppan Printing Co., Ltd.

Yutaka Ohira

Takao Iida

Taisuke Yonemura

Ikuo Yamamoto

Shinichi Minami

Yuki Mitsui

Akira Sekiya

Ginjiro Tomizawa

Yoshio Funakoshi

Nobuo Ikekawa

Yoko Tanaka

Yoshiro Kobayashi

Takeo Taguchi

Katsuo Sakai

Kenji Kameda

Hitoshi Murata

Kaoru Abe

Katsuya Fukae

Etsuo Wani

Seiji Okura

Masaji Sakamura

Chiaki Ishioka

A CVD apparatus cleaning method that efficiently removes by-product such as SiOor SiNadhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

CVD apparatus and method of cleaning the CVD apparatus

Even when a mold part of an IC module is exposed from an opening provided in a substrate of an inlay, occurrence of malfunction, communication disorders or the like of the IC module due to the influence of an external impact or the like is prevented. By combining a sealing member including an insulating layer and an adhesive layer in a stacked manner to a shape covering a mold part of the IC module, occurrence of malfunction, communication disorders or the like of the IC module is prevented even if there is an influence of an external impact or the like. Meanwhile, by providing a sealing member, concentration of stress on the mold part in a line pressure test is alleviated by limiting the size of the sealing member, and also occurrence of cracks in the mold part can be prevented.

Contactless communication medium

Disclosed is a fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula:CH&#x2550;C(&#x2014;X)&#x2014;C(&#x2550;O)&#x2014;Y&#x2014;[&#x2014;(CH)&#x2014;Z&#x2014;]&#x2014;(CH)&#x2014;Rf&#x2003;&#x2003;(I)(B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.

Fluorine-containing monomer, fluorine-containing polymer and surface treating agent

A disk device includes: a front panel; a bottom chassis, including: a bottom plate, having a first end and a second end; and a side plate, formed on the first end, the side plate formed with a first through hole; a connecting member, having a first wall formed with a second through hole and a second wall coupled with the front panel; a hook portion, formed on the first wall so as to extend in a first direction and engaging with the side plate; a screw, fitted into the first through hole and the second through hole thereby coupling the first wall and the side plate; a first engaging member, formed on the side plate; and a second engaging member, formed on the connecting member, and engaging with the first engaging member such that movement thereof in at least the first direction is restricted.

Disk device

Fluorine-containing urethanes represented by the general formula:[Rf-A-Z&#x2014;X&#x2014;OC(&#x2550;O)NH&#x2014;]I[&#x2014;NHC(&#x2550;O)O&#x2014;Y][&#x2014;NHC(&#x2550;O)O&#x2014;(ClCH&#x2014;)XO)&#x2014;R]&#x2003;&#x2003;(1)wherein I is a group derived from a polyisocyanate by removal of the isocyanato groups; Rf is perfluoroalkyl of 1 to 21 carbon atoms; Ais a direct bond or an organic group of 1 to 21 carbon atoms; Z &#x2014;SO&#x2014;; Xis a divalent, straight-chain or branched, Caliphatic group which may have at least one hydroxyl group; Xis a trivalent, straight-chain or branched, Caliphatic group; Yis a monovalent organic group which is optionally hydroxylated; and Ris hydrogen or alkyl of 1 to 10 carbon atoms.

Fluorine-containing urethanes

Disclosed is a surface treating agent containing fluorine-containing polymer having:

Surface treating agent, fluorine-containing monomer and fluorine-containing polymer

Disclosed is a fluorine-containing polymer having:

The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.

Process for producing carbonyl fluoride

A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.

Plasma cleaning gas and plasma cleaning method

A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.

Cleaning gas and etching gas

The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF OCOF and CF OCF OCOF, and O in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF COF, C F COF or CF (COF) and O in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF , etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.

Cleaning gases and etching gases

The invention provides a compound represented by the following formula (I)

Gangliosides having fluorescent-tagged ceramide moieties

2-fluorofucosyl-N-aroylglucosamine derivatives, intermediates, therefor,

Lewis X derivatives

In order to rotatably support a joggle knob on a front panel, a recess is formed in the part of the front panel where the joggle knob is supported, and cuts are formed along the periphery of the recess in such a manner that they are coaxial with the center of turn. Furthermore, the joggle knob has locking pawls whose end portions are wedge-shaped in section. The locking pawls are inserted into the cuts, respectively. In addition, on the side of the inner surface of the front panel, sloped boards are arranged which have sloped surfaces along the loci of turn of the locking pawls. Hence, when the joggle knob is turned, the locking pawl is moved on the sloped board to push the latter backwardly, whereby a tact switch is positively pushed which is arranged behind the front panel.

Growing community of inventors

Tsukuba, Japan

Yutaka Ohira