Ulvac, Inc.

Yutaka Nishioka

Koukou Suu

Natsuki Fukuda

Takeshi Masuda

Takakazu Yamada

Masahiko Kajinuma

Masaki Uematsu

Kazumasa Horita

Shin Kikuchi

Kazunori Fukuju

Youhei Ogawa

Takehito Jimbo

To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change deviceaccording to the present embodiment includes a lower electrode layer, an upper electrode layer, a first metal oxide layer, a second metal oxide layer, and a current limiting layer. The first metal oxide layeris disposed between the lower electrode layerand the upper electrode layer, and has a first resistivity. The second metal oxide layeris disposed between the first metal oxide layerand the upper electrode layer, and has a second resistivity higher than the first resistivity. The current limiting layeris disposed between the lower electrode layerand the first metal oxide layer, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

Resistance change device, and method for producing same

To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change elementaccording to an embodiment of the present invention includes a bottom electrode layer, a top electrode layerand an oxide semiconductor layer. The oxide semiconductor layerhas a first metal oxide layerand a second metal oxide layer. The first metal oxide layeris formed between the bottom electrode layerand the top electrode layer, and in ohmic contact with the bottom electrode layer. The second metal oxide layeris formed between the first metal oxide layerand the top electrode layer, and in ohmic contact with the top electrode layer.

Resistance change element and method for producing the same

[Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. [Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.

Method of manufacturing variable resistance element and apparatus for manufacturing the same

The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

Shower head, device and method for manufacturing thin films

The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.

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Shizuoka, Japan

Yutaka Nishioka