Mitsubishi Denki Kabushiki Kaisha

Nihon Kohden Corporation

Ajinomoto Co., Ltd.

Taiyo Yuden Co., Ltd.

Fuji Yakuhin Kogyo Kabushiki Kaisha

Mitsubishi Precision Kabushiki Kaisha

Hitachi Consumer Electronics Co., Ltd.

Yutaka Nagai

Yutaka Mihashi

Kazuhiro Watanabe

Koichiro Nishimura

Kimio Shigihara

Toshitaka Aoyagi

Katsuhiro Tsuchiya

Kenji Ikeda

Akihiro Shima

Yoshiyuki Takahara

Masao Yamazaki

Kenji Fujiwara

Takahiro Sakai

Shumpei Sakakibara

Yoichiro Ota

Kazuo Yamagishi

Tomonobu Maruyama

Tetsuo Saji

Tetsuya Yagi

Masami Ito

Masakazu Ikeda

Hitoshi Tada

Motoharu Miyashita

Akira Takemoto

Masaya Shimamura

Eiji Mugiya

Kenzo Kitazaki

Yasutomo Kajikawa

Tadanori Morikawa

Shuji Higashi

Hitoshi Watanabe

Shinjiro Odake

Kenichi Kajiwara

Masami Obata

Toru Okayama

Mami Ikeda

Masashi Takao

Shotaro Fujii

Shigeko Yamamoto

Disclosed is a method for detecting lipid bilayer membrane particles or fragments thereof, having predetermined molecules existing on surfaces thereof, in a biological sample collected from a subject, the method comprising: adding to the biological sample a dye that stains a lipid bilayer membrane; adding a substance that specifically binds to the predetermined molecules; trapping the substance bound to the predetermined membrane molecules and separating unbound components; and detecting the separated stained lipid bilayer membrane particles or fragments thereof by measurement of the dye emission spectrum. The specific binding substance is conjugated to a magnetic bead or binds to a magnetic bead, the trapping and separating steps are performed magnetically, and the particle size of the magnetic bead is equal to or less than the minimum detection sensitivity of the measurement system.

Method for detecting lipid bilayer membrane particles or fragments thereof

An analyzing system includes an imaging cytometer having a first imaging section configured to perform an imaging of particles contained in an analyte sample to generate images, the imaging cytometer being configured to analyze the images generated by the first imaging section, and a blood cell analyzing apparatus configured to analyze particles contained in the analyte sample by at least one of an electrical resistance method and an optical analyzing method. One of the imaging cytometer and the blood cell analyzing apparatus has an analyzing section configured to produce a report of an analysis of the analyte sample based on particle information acquired by the imaging cytometer and particle information acquired by the blood cell analyzing apparatus.

Analyzing system and analyzing apparatus

An object of the present invention is to provide a method which is capable of carrying out detection and evaluation of the vascular endothelial damage with a high degree of accuracy. According to an aspect of the present invention, there is provided a method for testing vascular endothelial damage with respect to a blood sample collected from living organism comprising the steps of: 1) detecting or determining quantitatively vascular endothelial cell-derived microparticle; and 2) detecting or determining quantitatively tissue factor-containing microparticle. Furthermore, according to another aspect of the present invention, there is provided a testing kit of vascular endothelial damage comprising a first antibody which specifically recognizes the vascular endothelium-derived microparticle, and a second antibody which specifically recognizes the tissue factor-containing microparticle.

Method for testing vascular endothelial damage and testing kit

A circuit module includes a substrate, a mount component, a sealing body, a trench and a shield. The substrate has a mount surface. The mount component is mounted on the mount surface. The sealing body has a main surface and an outer peripheral surface, the sealing body sealing the mount component, the main surface sandwiching the mount component between the main surface and the mount surface, the outer peripheral surface covering the mount component on the mount surface. The trench has a groove-like shape, the trench being recessed from the main surface of the sealing body to the mount surface, the trench being formed to leave a space between the trench and the outer peripheral surface. The shield covers the main surface and the outer peripheral surface of the sealing body, the shield being filled in the trench.

Circuit module and method of producing the same

A method and an apparatus using acridine orange for sorting particles to precisely carry out the measurement of cells in the blood are provided. The cells in the blood is sorted by the steps of staining cells in the blood with acridine orange, irradiating light on the cells in the blood, determining staining behavior using platelets as a staining indicator, and sorting the cells in the blood.

Classification of blood cells and apparatus therefore

A laser light source emits a first light beam irradiating a solution including target particles and being flowed in a flow cell to generate forward scattered light and orthogonal scattered light therefrom. A light emitting diode emits a second light beam irradiating the solution in the flow cell to generate at least one wavelength of fluorescence therefrom. A first detector is adapted to detect the forward scattered light. A second detector is adapted to detect the orthogonal scattered light. At least one third detector is adapted to detect the at least one fluorescence. A first filter is disposed between the flow cell and the third detector and adapted to eliminate scattered light generated from the target particles by the irradiation of the first light beam.

Flow cytometer

A blood sample containing leukocytes flows through a flow cell. A light source emits a light beam in a first direction. The light beam incident into the flow cell is scattered by the blood sample as scattered light. A first detector detects an intensity of forward small scattered light out of the scattered light. The first detector is arranged so as to have a maximum angle of a detection angle range for the forward small scattered light stemmed from the first direction at a position inside (outside) of the flow cell, which is 3.1 (4) degrees or less. A second detector detects an intensity of forward large scattered light out of the scattered light. The second detector is arranged so as to have a detection angle range for the forward large scattered light stemmed from the first direction at a position inside (outside) of the flow cell, which falls in a range from 8 to 12 (10 to 16) degrees. A processor classifies the leukocytes based on the detected intensity of the forward large scattered light and the detected intensity of the forward small scattered light.

Flow cytometer for classifying leukocytes and method for determining detection angle range of the same

A flow cell , a composite lens , and first to third detectors to are arranged in this sequence in the light pathway of light emitted from a laser light source . The composite lens is configured by a convex lens , and lens elements and . These lenses have different focal lengths. When the posture of the composite lens is correct, light impinging on the convex lens forms an image on the first detector. Therefore, the positioning of the composite lens is enabled. When particles in the flow cell are irradiated with laser light, forward scatter is produced. Forward small angle scatter having a small scattering angle impinges on the first lens element to be collected thereby, and is then received by the second detector . Forward large angle scatter having a large scattering angle impinges on the second lens element in the outermost periphery to be collected thereby, and is then received by the third detector which is remotest from the composite lens.

Particle analyzer and composite lens formed by integrally joining plural lens elements of different focal points

A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 &mgr;m or 1.55 &mgr;m and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.

Semiconductor laser device and method of producing the same

A flow cell 2, a composite lens 15, and first to third detectors 16 to 18 are arranged in this sequence in the light pathway of light emitted from a laser light source 1. The composite lens 15 is configured by a convex lens 15a, and lens elements 15b and 15c. These lenses have different focal lengths. When the posture of the composite lens is correct, light impinging on the convex lens forms an image on the first detector. Therefore, the positioning of the composite lens is enabled. When particles in the flow cell are irradiated with laser light, forward scatter is produced. Forward small angle scatter having a small scattering angle impinges on the first lens element 15b to be collected thereby, and is then received by the second detector 17. Forward large angle scatter having a large scattering angle impinges on the second lens element 15c in the outermost periphery to be collected thereby, and is then received by the third detector 18 which is remotest from the composite lens.

Particle analyzer and composite lens formed by integrally joining plural

A ridge type laser diode with a stabilized horizontal transverse mode and little variation in peak output power and a method for producing the laser. The ridge type laser diode includes a semiconductor substrate; an active layer on the semiconductor substrate, the active layer being interposed between a lower cladding layer and an upper cladding layer; and a ridge waveguide having a width, the ridge waveguide being part of the upper cladding layer so that the active layer located directly opposite the ridge waveguide is a first high refractive index region having a first refractive index; and a second high refractive index region in the central part of the first high refractive index region, having a second, higher refractive index than the first refractive index, and formed by disordering a region other than the central part and having a width less than the width of the ridge waveguide.

Semiconductor laser diode including ridge and partially disordered

A semiconductor laser includes a first conductivity type semiconductor substrate; a first conductivity type lower cladding layer, an active layer, and a second conductivity type first upper cladding layer, disposed in this order on the first conductivity type semiconductor substrate; a second conductivity type current confinement layer disposed on the first upper cladding layer, made of a semiconductor material containing a higher composition ratio of Al than the first upper cladding layer and having a stripe shape with a width and extending in a direction; and a second conductivity type second upper cladding layer made of the same material as the first upper cladding layer, disposed on the current confinement layer so that a central longitudinal axis of the current confinement layer is located directly opposite a central longitudinal axis of the current confinement region, and having a ridge structure with a bottom surface facing the first upper cladding layer, in contact with, and having a width larger than the current confinement layer, the grooves limiting the area in which current can flow between the lower cladding layer and the first upper cladding layer, eliminating leakage current that is not effective in generating light.

Semiconductor laser

A semiconductor laser includes a lower cladding layer, an active layer, a first upper cladding layer, an etch-stopping layer, a second upper cladding layer, and a contact layer successively laminated on a substrate, a ridge waveguide formed by selectively etching the second upper cladding layer and the contact layer with the use of a stripe-like insulating film as a mask to form a ridge, an AlAs oxide layer on the substrate and a second electrode on the substrate. Incorrect positioning does not occur between the ridge waveguide and a first electrode, reliability is improved, and the distribution of effective refractive index transverse to the resonation of the laser is reduced. A detailed method of fabricating this semiconductor laser is also provided.

Growing community of inventors

Tokyo, Japan

Yutaka Nagai