Mitsubishi Chemical Corporation

Nippon Kasei Chemical Company Limited

Yutaka Mori

Hanako Kato

Hiroshi Kobayashi

Tsubasa Tomura

Masanori Yamazaki

Takashi Yamaguchi

Mari Abe

Yoshio Katsuro

Keiji Yamahara

Kenichi Takizawa

Takeshi Otsu

Naoto Kijima

Takashi Hase

Yasuo Shimomura

Keiichi Seki

Tomoyuki Kurushima

Eiji Hattori

Masaru Shimoyama

Tadahiro Katsumoto

Katsuya Funayama

Yukinari Haraguchi

Kouji Watanabe

Masahito Shinbara

Kouichi Adachi

Nobuhiro Kodama

Tomoko Takahashi

Yuko Tsuruta

Takahiro Endo

Yoshiaki Koyashiki

Mayuko Takasu

Masaru c/o Mitsubishi Chemical Corporation Shimoyama

The present invention provides a material for a molded resin as a material for a semiconductor light-emitting device that can yield a highly durable (light resistance and heat resistance) molded resin and can also improve the LED output through an excellent reflectivity. The present invention also provides an easily moldable material for a molded resin for a semiconductor light-emitting device. The material for a molded resin for a semiconductor light-emitting device is a resin composition, comprising (A) a polyorganosiloxane, (B) a white pigment, and (C) a curing catalyst, wherein the white pigment (B) has the following characteristics (a) and (b):

Material for a molded resin for use in a semiconductor light-emitting device

An object of the present invention is to provide a package from which a metal wiring and the like are difficult to be detached even when heat is generated from a semiconductor light-emitting element. This object is achieved with a package for a semiconductor light-emitting device comprising at least a molded resin containing (A) a SiH-containing polyorganosiloxane and (B) a filler, wherein an amount of SiH existing in the molded resin, after a heat treatment thereof at 200&#xb0; C. for 10 minutes, is 20 to 65 &#x3bc;mol/g.

Package for semiconductor light-emitting device and light-emitting device

A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid state Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of &#x2212;40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of &#x2212;80 ppm or more and less than &#x2212;40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.

Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member

The present invention provides a curable polysiloxane composition which is excellent in light resistance (particularly ultraviolet resistance) and adhesion and has a sufficient heat resistance/hydrothermal resistance and film-forming property and which generates little foaming at curing and does not generate cracks, peeling, coloring, and foaming even when used for a long period of time. A curable polysiloxane composition which comprises a specific hydrosilyl group-containing polysiloxane compound, a specific polysiloxane compound comprising two or more silanol groups in one molecule, and a dehydrogenative condensation reaction catalyst.

Curable polysiloxane composition, and polysiloxane cured product, optical member, member for aerospace industry, semiconductor light-emitting device, illuminating device and image display device using the same

To provide a semiconductor device member that is superior in heat resistance, light resistance, film-formation capability and adhesion, and is capable of sealing a semiconductor device and holding a phosphor without causing cracks, peelings and colorings even after used for a long period of time, the weight loss at the time of heating, measured by a predetermined weight-loss at-the-time-of-heating measurement method, is 50 weight % or lower and the ratio of peeling, measured by a predetermined adhesion evaluation method, is 30% or lower, in the semiconductor device member.

Semiconductor device member, production method of semiconductor-device-member formation liquid and semiconductor device member, and semiconductor-device-member formation liquid, phosphor composition, semiconductor light-emitting device, lighting system and image display system using the same

A humidity-conditioning sheetexcellent in reversibility and responsiveness of a moisture adsorbing/desorbing ability of rapidly adsorbing moisture at high ambient humidity and conversely rapidly desorbing adsorbed moisture at low ambient humidity includes a sheet-shaped humidity-conditioning layerformed by bonding together, with a thermoplastic resin powder, humidity-conditioning particleswhich reversibly adsorb and desorb water vapor. The void ratio of the humidity-conditioning layeris 5% or more. Since a ratio of voidsformed between the humidity-conditioning particlesis high, the voidsbetween the humidity-conditioning particlescan be used as water retention spaces for moisture adsorption and desorption, thereby achieving the high reversible moisture adsorbing/desorbing ability and excellent moisture adsorption/desorption responsiveness with the aid of not only the moisture adsorbing/desorbing ability inherent in the humidity-conditioning particles but also the moisture adsorbing/desorbing ability of the voids between the humidity-conditioning particles.

Humidity-conditioning sheet

The present invention relates to a phosphor that satisfies requirements (1) to (3): The phosphor of the present invention has a high luminous efficiency and emits light of orange to red with high luminance. The use of the phosphor makes it possible to produce a light-emitting device, an illumination apparatus, and an image display, having a high efficiency and excellent color rendering properties.

Phosphor and light-emitting device using same

To provide novel semiconductor light-emitting device member superior in transparency, light resistance, and heat resistance and capable of sealing semiconductor light-emitting device and holding phosphor without generating cracks or peelings even after use for a long time, the member meets the following requirements: (1) comprising functional group forming hydrogen bond with hydroxyl group or oxygen in a metalloxane bond, on the surface of ceramic or metal, (2) maintenance rate of transmittance at 400 nm wavelength before and after left at 200&#xb0; C. for 500 hours is between 80% to 110%, (3) no change is observed by visual inspection after irradiated with light having 380 nm to 500 nm wavelength, whose center wavelength is between 400 nm and 450 nm both inclusive, for 24 hours with 4500 W/millumination intensity at 436 nm wavelength, and (4) refractive index at 550 nm wavelength is 1.45 or larger.

Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member

A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of &#x2212;40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of &#x2212;80 ppm or more and less than &#x2212;40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.

Subjects for the invention are to obtain a quartz powder having a high purity and high quality and a process for producing the same and to obtain a glass molding formed by melting and molding the powder and extremely reduced in bubble inclusion. The invention provides a quartz powder, preferably a synthetic quartz powder obtained by the sol-gel method, which, upon heating from room temperature to 1,700&#xb0; C., generates gases in which the amount of CO is 300 nl/g or smaller and the amount of COis 30 nl/g or smaller.

High-purity quartz powder, process for producing the same, and glass molding

Silica with a large pore volume, a large specific surface area, a narrow pore distribution, low contents of unwanted metal impurities, and excellent physical properties such as high heat-resistance and water-resistance is provided. The silica has a mode pore diameter (D) of 20 nm or less, and a solid-state Si nuclear magnetic resonance (hereinafter called solid-state Si NMR) spectrum of the silica includes a chemical shift (&#x3b4; ppm) of Qpeak meeting the following inequality (I).&#x2212;0.0705&#xd7;()&#x2212;110.36&#x3e;&#x3b4;&#x2003;&#x2003;(I) The silica with such properties can be suitably used in fields of which particularly excellent heat resistance and water resistance are required, and moreover controlled pore properties, and the fact that physical properties scarcely change over a long period of time are required among the above-mentioned applications.

Silica

Disclosed are a pretreatment process of a zeolite as a catalyst for producing an alcohol by hydration of an olefin, comprising keeping the zeolite in contact with water before the hydration, and a process for producing an alcohol which comprises hydrating an olefin in the presence of a zeolite catalyst obtained by keeping a zeolite as a catalyst in contact with water.

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Kitakyushu, Japan

Yutaka Mori