Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Hitachi, Ltd.

Hitachi Tokyo Electronics Co., Ltd.

Yutaka Miura

Shunichi Iimuro

Hayashi Otsuki

Shigeki Tozawa

Kazushi Tomita

Yoshikazu Ito

Hiromitsu Matsuo

Motohiro Hirano

Akira Nozawa

Hiroshi Nishikawa

Yoshifumi Tahara

Yoji Mizutani

Izumi Arai

Kazuo Fukasawa

Takahiro Shimoda

Shozo Hosoda

Shunji Kawakami

Yoshinobu Mitano

A process gas line () for carrying WFgas for nucleation, a process gas line () for carrying WFgas for film deposition after nucleation are joined at a single joint () to a carrier gas line (). A gas line () is connected to the joint () to carry a mixed gas of the carrier gas and WFgas to a processing chamber defined by a processing vessel. Sections of the carrier gas line () and the gas line () extending on the opposite sides of the joint () extend along a straight line, and the process gas lines () are perpendicular to the gas line ().

Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus

A process gas line ( ) for carrying WF gas for nucleation, a process gas line ( ) for carrying WF gas for film deposition after nucleation are joined at a single joint ( ) to a carrier gas line ( ). A gas line ( ) is connected to the joint ( ) to carry a mixed gas of the carrier gas and WF gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line ( ) and the gas line ( ) extending on the opposite sides of the joint ( ) extend along a straight line, and the process gas lines ( ) are perpendicular to the gas line ( ).

A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.

Plasma processing method and plasma processing apparatus

A partition member with a buffer plate disposed on the top surface thereof is disposed in a region belonging to a surface-to-be-processed of a substrate-to-be-processed held in a processing apparatus. An injector having cross-sectional areas decreasing toward the forward end thereof is disposed in the partition member. The injector has a number of injection holes formed length-wise therein at a constant pitch and in the same bore, whereby a processing gas can be injected very uniformly in the longitudinal direction and diffuse in the partition member. Then the processing gas is passed through vent holes formed in the buffer plate uniformly into the processing chamber. The processing gas can be fed uniformly onto the surface-to-be-processed of the substrate-to-be-processed, and a deposited thin film can have high intra-surface thickness uniformity.

Processing apparatus for substrates to be processed

The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

Plasma etching system and plasma etching method

Plasma etching system

Growing community of inventors

Koufu, Japan

Yutaka Miura