Hitachi, Ltd.

Yutaka Misawa

Hiroaki Hachino

Kenji Tochigi

Takashi Aoyama

Naohiro Momma

Yasuhiro Mochizuki

Masako Mizuno

Akira Kato

Masahiro Nishizawa

Takahiko Kato

Yoshifumi Tomita

Toshikazu Nishino

Tomoji Oishi

Takuzo Ogawa

Yasumichi Yasuda

Kojiro Okude

Hideo Homma

Sachiko Maekawa

Shoji Shukuri

Toshiya Satoh

Nobutake Konishi

Kenji Miyata

Minoru Takahashi

Osamu Saito

Shigeto Isakozawa

Ushio Kawabe

Kaoru Uchiyama

Yasuo Wada

Hideo Sunami

Takahiro Nagano

Kazumasa Takagi

Tatsuya Kamei

Kanji Kawakami

Seiko Suzuki

Takuya Fukuda

Yoshio Watanabe

Motohisa Nishihara

Seikichi Tanno

Shigeru Takahashi

Masahiro Okamura

Tokuumi Fukazawa

Takaya Suzuki

Junkichi Miura

Katsuzo Aihara

Katsuki Miyauchi

Yoshihide Wadayama

Haruhiro Hasegawa

Michio Ohue

Tomoyuki Tanaka

Jiro Kuniya

Taro Nogami

Akio Mimura

Yoshinori Takata

Hiroyuki Miyagi

Masaaki Takahashi

Yoko Wakui

Hitoshi Minorikawa

Hideyuki Yagi

Yoshikazu Hosokawa

Masahiro Ogihara

Takahiko Tanigami

Koji Kimoto

Kishu Hosoi

Toshiyuki Hidaka

Toshiaki Fukuhara

Hisashi Sakamoto

Sadao Fujieda

An anti-reflection film is produced on the panel surface of a cathode-ray tube by: (A) preparing a solution for forming an anti-reflection film, which contains water and a metal alkoxide having the formula,

Method for forming and anti-reflection film of a cathode-ray tube, an

Method for forming an anti-reflection film of a cathode-ray tube, an

In a liquid chromatographic system for analyzing biological or vital components in blood, etc., a separation column packed with a packing material of organic porous material containing carboxyalkyl groups as functional groups and having pore diameter of 600 to 1,200 .ANG. in dry state and an ion exchange capacity of 0.1 to 0.5 meq/g on dry basis is used to improve the chromatographic performance of the separation column, 5-component and 6-component analysis are carried out by switching separation columns of different column length or diameter, and judgement of column life is made by evaluation parameters.

Liquid chromatographic system and operation method

A specimen cartridge fashioned of a good thermal conductor, with an outer frame being fashioned of heat insulating material, and with a connecting rod being fashioned of a poor thermal conductor. A temperature distribution of the specimen is uniform and a temperature drift is reduced, with a thermal expansion of a specimen cartridge tilting rod not affecting the tilting angle, thereby making it possible to perform various highly accurate observations and measurements with an electron microscope.

Electron microscope specimen holder

An analytical electron microscope automatically identifies objects in a sample on the basis of shape of the object, change of thickness of the object and/or change of element (such as change of element type or concentration). Therefore, the operator of the analytical electron microscope can specify a desired object, and an example or examples of that object in a sample can be identified automatically. The characteristics need to identify the object are determined by detecting the effect of the sample on the electron beam of the analytical electron microscope, using, for example, an energy dispersive type X-ray analyzer and an electron energy loss spectrometer. Once an example of the object has been identified, it may be analyzed further. The analytical electron microscope may also analyze a sample to identify and classify the objects present.

Analytical electron microscope and a method of operating such an

In separation column 23 is packed a filler consisting of an inorganic or organic porous substance having carboxyalkyl group and dihydroxyboronyl group. Thus, the separation column 23 can concurrently perform the procedure of separating glycohemoglobin, hemoglobin and hemoglobin derivatives in blood and the procedure of decomposing labile-type hemoglobin in blood into glucose and hemoglobin to remove the labile-type hemoglobin, when a diluted blood sample on sample table 19 along with eluents 8 to 10 is transferred to the separation column 23. Then, stable-type hemoglobin in the eluate from the separation column 23 is measured by UV-VIS detector 25.

Apparatus for measuring glycohemoglobin

Stable hemoglobin A.sub.lc (s-A.sub.lc) can be separated from other hemoglobin components and quantitated in a short time by means of a liquid-chromatographic apparatus comprising a separation column packed with a packing material consisting essentially of a porous substance having a carboxyalkyl group combined thereinto, as ion exchanger, a means for injecting a sample into the separation column, a means for passing one or more eluents through the separation column, and a means for detecting hemoglobin, hemoglobin derivatives or glycosylated hemoglobin, the average particle size of the packing material in dry state being 4 .mu.m or less.

Apparatus for liquid chromatography for separating AIC components from

Technology for using a wiring of a superconductive material in semiconductor integrated circuit device. An isolation layer and/or a barrier layer are provided for preventing diffusion of harmful composition of the superconductive material for the semiconductor device. Control of a circuit can be made utilizing the characteristics of a superconductive material. Also, the characteristics of a superconductive material may be controlled. A method of forming a layer of superconductive material, well compatible with the widely used process of manufacturing integrated circuit devices, is also disclosed.

Semiconductor integrated circuit device having superconductive layer and

A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa.sub.2 Cu.sub.3 O.sub.7-x, thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.

Process for controlling oxygen content of superconductive oxide,

A laminar structure comprising an organic material and an inorganic material; for example, a coating structure on an organic substrate comprising an organic material on which an inorganic film must be formed and a method of producing the structure, a structure which is suitable for increasing the reliability of an optical disk and a method of producing this, a wiring structure on an organic substrate comprising the organic material on which electric wiring must be formed and a method of producing this, and a structure suitable for increasing the reliability of a semiconductor integrated circuit device and a method of producing this. In order to provide a laminar structure which exhibits a high degree of reliability with respect to prevention of cracks or separation and which comprises an organic material and an inorganic material and a method of producing this structure and a device which utilizes this structure, the present invention provides a laminar structure on an organic substrate comprising the organic substrate comprising an organic material and a thin film which is caused to adhere to the surface of the organic substrate and which comprises an inorganic material a second element which produces a metal bonding or covalent bonding with the first element that forms the thin film being contained in the organic substrate in the vicinity of the surface thereof.

Laminar structure comprising organic material and inorganic material

A thin film transistor formed on an insulating sulstrate is disclosed in which metal silicide layers are formed in a thin film made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer.

Thin film transistor formed on insulating substrate

A semiconductor LSI device formed in a semiconductor substrate comprising source/ drain regions of a MOSFET, polycrystalline silicon conductor to be connected to the source/drain region, and a silicide layer interposed between the source/drain region and the polycrystalline silicon conductor. Silicide intrudes into silicon bulk through an oxide film on the silicon substrate surface, assuring contact of low resistance, while lateral resistance of the source/drain region formed in the semiconductor substrate is also reduced. Reduction of contact/connection resistances is accomplished in a high density LSI which is thus imparted with an improved high-speed performance.

Semiconductor device and manufacturing method thereof

A semiconductor device has a structure in which two semiconductor substrates are coupled to each other through a semiconductor oxide film and a metal silicide film, and a semiconductor element, for example, a bi-polar transistor is formed in the semiconductor substrate on the metal silicide film side, whereby a metal silicide layer having a high melting point is provided beneath one region of the bi-polar transistor for example, an n.sup.+ buried collector layer and in ohmic contact with the n.sup.+ buried collector layer. An electrical isolation between the adjacent semiconductor elements is made by an insulating layer.

Semiconductor device

A method of fabricating a semiconductor device includes the steps of: forming at least one first semiconductor region of a first conductivity type and at least one second semiconductor region of a second conductivity type in a main surface of a semiconductor layer of the first conductivity type; forming a three-layer film having a desired shape on each of the first and second semiconductor regions, the three-layer film being made up of a bottom layer which is a conductive film, an intermediate layer which is a silicon nitride film, and a top layer which is a polycrystalline silicon film doped with one of arsenic and phosphorus; forming a first insulating layer on the side wall of the three-layer film; forming a second polycrystalline silicon film on the whole surface, and diffusing one of arsenic and phosphorus from the first polycrystalline silicon film into the second polycrystalline silicon film; selectively etching off the first polycrystalline silicon film and that portion of the second polycrystalline silicon film, in which one of arsenic and phosphorus has been diffused; forming a second insulating layer at least on the surface of the portion of the second polycrystalline silicon film which exists on the second semiconductor region; removing the silicon nitride film and the conductive film which exist on the second semiconductor region, while using the second insulating layer as a mask, to form an aperture; and forming a third polycrystalline silicone film so that the aperture is covered by the third polycrystalline silicon film.

Method of fabricating bipolar transistors and insulated gate field

A process for manufacturing resin-molded semiconductor devices which are sealed in an epoxy resin is carried out without employing a metal mold. In the process, an epoxy resin is deposited on a sub-assembly consisting of a semiconductor pellet brazed to axial leads while turning the sub-assembly with the axial leads as a center so that the epoxy resin is applied to a predetermined shape; then the epoxy resin is heated at an elevated temperature while turning the sub-assembly so that surface portions of the epoxy resin are hardened and the epoxy resin is further heated at an elevated temperature without turning the sub-assembly so that the epoxy resin is completely hardened.

Resin-molded semiconductor device and a process for manufacturing the

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Katsuta, Japan

Yutaka Misawa