Japan Science and Technology Agency

Samsung Electronics Co., Ltd.

Mitsubishi Chemical Corporation

Other

Tdk Corporation

Mitsubishi Kinzoku Kabushiki Kaisha

Denso Corporation

The University of Tokyo

Aalto University

Mitsubishi Materials Corporation

Mitsubishi Nuclear Fuel Co., Ltd.

Mitsubishi Metal Corporation

Yutaka Matsuo

Eiichi Nakamura

Yeong Suk Choi

Hiromasa Shibuya

Takeshi Isobe

Yoshio Kaita

Shigeo Maruyama

Yoshitaka Suda

Kehang Cui

Nobuo Suda

Kazuyosi Adachi

Esko I Kauppinen

Albert G Nasibulin

Il Jeon

Katsuhiko Kanaizuka

Gae Hwang Lee

Sung Young Yun

Seon-Jeong Lim

Minoru Fujita

Tadao Yagi

Taejin Choi

Chul Baik

Yoshiharu Sato

Jun Hirabayashi

Norihito Ishii

Rie Sakurai

Jun Arima

Hye Rim Hong

Ji Soo Shin

Akihiko Iwashita

Takaaki Niinomi

Yasuo Ichihara

Kazuo Toda

Masahiko Hashiguchi

Tadashi Hosoda

Yu-Wu Zhong

Ayako Muramatsu

Takahiro Nakae

Choi Yeong Suk

The present invention provides a light-transmitting electrode which has high electrical conductivity and high electron blocking performance. The present invention also provides a solar cell which is capable of achieving high energy conversion efficiency at low cost. The present invention provides a method for producing a light-transmitting electrode that has a light-transmitting substrate, a carbon nanotube film which is formed directly or indirectly on the light-transmitting substrate, and a metal oxide film which is formed directly on the carbon nanotube film. This production method includes vapor depositing the metal oxide film, which contains oxygen and a metal element belonging to the group 4, 5 or 6 of the periodic table, on one surface or both surfaces of the carbon nanotube film. The present invention provides a light-transmitting electrode which includes a light-transmitting substrate and a conductive carbon nanotube film that is formed directly or indirectly on the light-transmitting substrate.

Light-transmitting electrode having carbon nanotube film, solar cell, method for producing light-transmitting electrode having carbon nanotube film, and method for manufacturing solar cell

A gas sensor includes a first thermistor as a detection element, a second thermistor as a reference element, a first heater for heating the first thermistor, a second heater for heating the second thermistor, and a control circuit that heats the first and second heaters such that the second thermistor has a higher temperature than the first thermistor in a first period of time and that the first thermistor has a higher temperature than the second thermistor in a second period of time.

Gas sensor

A gas sensor includes: a first thermistor having a resistance value that changes according to a concentration of a first gas with a first sensitivity and changes according to a concentration of a second gas with a second sensitivity; a second thermistor connected in series to the first thermistor, the second thermistor having a resistance value that changes according to a concentration of the first gas with a third sensitivity that is lower than the first sensitivity and changes according to a concentration of the second gas with a fourth sensitivity that is different from the second sensitivity; and a correction resistor connected in parallel with the first or second thermistor.

Disclosed are an N-type semiconductor composition including fullerene or a fullerene derivative; and fullerene subunit derivative represented by Chemical Formula 1, and a thin film, an organic photoelectric device, an image sensor and an electronic device including the same.  In Chemical Formula 1, X, Cy and Rto Rare the same as defined in the detailed description.

N-type semiconductor composition, and thin film, organic photoelectric device, image sensor, and electronic device including the same

Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same.  In Chemical Formula 1, X, Ar, Rto R, a, b, and c are the same as defined in the detailed description.

Fullerene derivatives, and organic photoelectric device, image sensor, and electronic device including the same

Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the fullerene derivative. In Chemical Formula 1, X, Ar, and Rto Rare the same as defined in the detailed description.

Fullerene derivatives and photoelectric device and image sensor

An object of the present invention is to provide a Schottky barrier diode using gallium oxide capable of suppressing heat generation and enhancing heat radiation performance while ensuring mechanical strength and handling performance. A Schottky barrier diode includes a semiconductor substratemade of gallium oxide having a recessed parton the second surface, an epitaxial layermade of gallium oxide and provided on a first surfaceof the semiconductor substrate; an anode electrodeprovided at a position overlapping the recessed partas viewed in the lamination direction and brought into Schottky contact with the epitaxial layer, and a cathode electrodeprovided in the recessed partof the semiconductor substrateand brought into ohmic contact with the semiconductor substrate. According to the present invention, since the thickness of the semiconductor substrate at a part thereof where forward current flows is selectively reduced, this makes it possible to suppress heat generation and to enhance heat radiation performance while ensuring mechanical strength and handling performance. Thus, even though gallium oxide having a low heat conductivity is used as the material of the semiconductor substrate, a temperature rise of the element can be suppressed.

Schottky barrier diode and electronic circuit provided with same

A fullerene derivative may be included in photoelectric devices and image sensor. Optical absorption characteristics of a thin film including the fullerene derivative may be shifted toward a short wavelength compared with those of the thin film including the unsubstituted C60 fullerene, for example, a thin film including the fullerene derivative may be associated with a peak absorption wavelength (&#x3bb;) that is be shorter than that of a thin film including the unsubstituted C60 fullerene.

Fullerene derivatives and photoelectric devices and image sensors

The present invention provides a photoelectric conversion material comprising a fullerene derivative represented by the formula C(R)(R), wherein each Rindependently represents an organic group having a substituent; and Rrepresents a hydrogen atom or a substituted or unsubstituted C-Chydrocarbon group. Further, the present invention also provides a photoelectric conversion device having a self-assembled monomolecular film of the photoelectric conversion material, and a solar cell having the photoelectric conversion device.

Photoelectric conversion material containing fullerene derivative

The present invention provides a photoelectric conversion device having at least a fullerene derivative as an electron acceptor and a compound as an electron donor between a pair of electrodes, wherein the fullerene derivative has 2 to 4 organic groups which each independently have 1 to 50 carbon atoms, and wherein when the fullerene derivative has two organic groups, these organic groups do not bind to each other to form a ring.

Photoelectric converter and solar cell using the same

The present invention provides a photoelectric conversion material comprising a fullerene derivative represented by the formula C(R)(MLn), wherein: each Rindependently represents an organic group having a substituent; M represents a metal atom; L is a ligand of M; and n is the number of Ls. Further, the present invention also provides a photoelectric conversion device having a self-assembled monomolecular film of the photoelectric conversion material, and a solar cell having the photoelectric conversion device.

The present invention provides a fullerene derivative represented by the following formula (1): wherein in formula (1), Ris a substituted or unsubstituted organic group or a hydrogen atom, and wherein in formulae (2) and (3): W is a single bond, C-C, alkylene, C-Calkenylene, or C-Calkynylene, wherein any &#x2014;CH&#x2014; in the alkylene, alkenylene or alkynylene can be substituted with &#x2014;O&#x2014;, &#x2014;S&#x2014;, &#x2014;COO&#x2014;, or &#x2014;OCO&#x2014;; Z is an element belonging to group IVB; and Rto Rare each independently a substituted or unsubstituted C-Calkyl group, a substituted or unsubstituted C-Calkenyl group, or a substituted or unsubstituted C-Calkynyl group.

Fullerene derivatives

The present invention provides a method for producing a fullerene derivative, comprising the organic group addition step B in which an organic group is further added by reacting at least a basic compound and a halogen compound with a fullerene derivative, which is obtained by addition of a hydrogen atom and an organic group in the organic group addition step A, in which an organic group is added by reacting at least a Grignard reagent and a polar substance with a fullerene or fullerene derivative.

Process for producing fullerene derivative

The present invention provides a method for producing a fullerene derivative comprising reacting: a fullerene; an organometallic reagent (A) comprising B, Al, Zn, Sn, Pb, Te, Ti, Mn, Zr or Sm; and a copper compound (B).

Fullerene derivative and methods for producing same

Growing community of inventors

Tokyo, Japan

Yutaka Matsuo